Kinetic Analysis of InAsP by Metalorganic Vapor Phase Epitaxy Selective Area Growth Technique
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概要
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The fundamental kinetics of metal organic vapor phase epitaxy (MOVPE) related ternary compound-InAsP has been systematically investigated by analyzing selective area growth. The overall surface reaction rate constant ($k_{\text{s-overal}}$) of indium species in this material system is successfully obtained, it shows a composition dependence in which $k_{\text{s-overall}}$ increases with the amount of P in InAs1-xPx. On the basis of binary kinetics of InAs and InP, $k_{\text{s-overall}}$ can be estimated from the linear combination of the surface reaction rate constant ($k_{\text{s}}$) in the As site and the $k_{\text{s}}$ in the P site. Result shows that the linear estimation of $k_{\text{s-overall}}$ is consistent with experimental data, which indicates that the incorporations of indium species in the P and As sites should be almost independent of each other. These results revealed that the real surface process of the ternary material system provides significant information and fundamental concepts for further modeling of more complicated quaternary compounds, such as InGaAsP.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-04-25
著者
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Sugiyama Masakazu
Institute Of Engineering Innovation School Of Engineering The University Of Tokyo
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Nakano Yoshiaki
Research Center For Advanced Science And Technology (rcast) At The University Of Tokyo
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WANG Yunpeng
Department of Aerospace Engineering, Nagoya University
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Shimogaki Yukihiro
Department of Electronic Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113, Japan
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Song Haizheng
Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
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Sugiyama Masakazu
Institute of Engineering Innovation, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
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Wang Yunpeng
Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
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SHIMOGAKI YUKIHIRO
Department of Chemical Engineering, University of Tokyo
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