Effects of Strain on the Performance of InGaAs/GaAsP Multiple-Quantum-Well Solar Cells Correlated with In situ Curvature Monitoring
スポンサーリンク
概要
- 論文の詳細を見る
- 2012-06-25
著者
-
Nakano Yoshiaki
Research Center For Advanced Science And Technology Univ. Of Tokyo
-
Nakano Y
Research Center For Advanced Science And Technology The University Of Tokyo
-
Sugiyama Masakazu
Department Of Biotechnology Graduate School Of Agriculture And Life Sciences The University Of Tokyo
-
Nakano Yoshiaki
Research Center For Advanced Science And Technology (rcast) At The University Of Tokyo
-
WATANABE Kentaroh
Research Center for Advanced Science and Technology, The University of Tokyo
-
SODABANLU Hassanet
Research Center for Advanced Science and Technology, The University of Tokyo
-
MA Shaojun
Department of Electrical Engineering and Information System, School of Engineering, The University of Tokyo
-
Watanabe Kentaroh
Research Center For Advanced Science And Technology The University Of Tokyo
-
Ma Shaojun
Department Of Electrical Engineering And Information System School Of Engineering The University Of Tokyo
-
Sodabanlu Hassanet
Research Center For Advanced Science And Technology The University Of Tokyo
関連論文
- Improved Etched Surface Morphology in Electron Cyclotron Resonance-Reactive Ion Etching of GaN by Cyclic Injection of CH_4/H_2/Ar and O_2 with Constant Ar Flow
- Electron Cyclotron Resonance-Reactive Ion Beam Etching of InP by Cyclic Injection of CH_4/H_2/Ar and O_2(Semiconductors)
- Optimization of Polysilane Structure as Fast-Etching Bottom Antireflective Coating for Deep Ultraviolet Lithography
- Monolithically Integrated InGaN-Based Multicolor Light-Emitting Diodes Fabricated by Wide-Stripe Selective Area Metal-Organic Vapor Phase Epitaxy
- Optical and Structural Characterization of InGaN/GaN Multiple Quantum Wells by Epitaxial Lateral Overgrowth
- Intersubband Transition at 1.52μm in GaN/AlN Multiple Quantum Wells Grown by Metal Organic Vapor Phase Epitaxy
- Fabrication of Abrupt AlN/GaN Multi Quantum Wells by Low Temperature Metal Organic Vapor Phase Epitaxy
- Kinetic Analysis of InN Selective Area Metal-Organic Vapor Phase Epitaxy
- Fabrication of AlGaN-Based Waveguides by Inductively Coupled Plasma Etching
- Application of Organic Silicon Clusters to Pattern Transfer Process for Deep UV Lithography
- GaN-Based High-Speed Intersubband Optical Switches
- Thin Body III-V-Semiconductor-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Fabricated Using Direct Wafer Bonding
- InGaAsP Photonic Wire Based Ultrasmall Arrayed Waveguide Grating Multiplexer on Si Wafer
- Dislocation-Free InGaAs on Si(111) Using Micro-Channel Selective-Area Metalorganic Vapor Phase Epitaxy
- Fabrication of a Monolithically Integrated WDM Channel Selector Using Single Step Selective Area MOVPE and Its Characterization(Semiconductor Devices,Recent Advances in Integrated Photonic Devices)
- Examination of Surface Elementary Reaction Model for Chemical Vapor Deposition of Al Using In Situ Infrared Reflection Absorption Spectroscopy : Teoretical Optimization Procedure (3)
- Elementary Surface Reaction Simulation of Aluminum Chemical Vapor Deposition from Dimethylaluminumhydride Based on Ab Initio Calculations : Theoretical Process Optimization Procedure(2)
- Kinetics of GaAs Metalorganic Chemical Vapor Deposition Studied by Numerical Analysis Based on Experimental Reaction Data
- Reaction Analysis of Aluminum Chemical Vapor Deposition from Dimethyl-aluminum-hydride Using Tubular Reactor and Fourier-Transform Infrared Spectroscopy : Theoretical Process Optimization Procedure(1)
- Effect of Y-Doping on Resistance Degradation of Multilayer Ceramic Capacitors with Ni Electrodes under the Highly Accelerated Life Test
- Aging Behavior of Ni-Electrode Multilayer Ceramic Capacitors with X7R Characteristics
- Highly-Permissible Alignment Tolerance of Back-Illuminated Photo-Diode Array Attached with a Self-Aligned Micro Ball Lens
- Semiconductor Waveguide Optical Isolator Incorporating Ferromagnetic Epitaxial MnSb for High Temperature Operation
- Waveguide-Based 1.5μm Optical Isolator Based on Magneto-Optic Effect in Ferromagnetic MnAs
- Evidence of Sr-Deficiency in Bi_2Sr_Ca_1Cu_2O_8 and Preparation of Stoichiometric Semiconducting Bi_2Sr_2Ca_1Cu_2O_8
- Intergration of Terraced Laser Diode and Garnet Crystals by Wafer Direct Bonding
- Effect of Underlayers on the Morphology and Orientation of Aluminum Films Prepared by Chemical Vapor Deposition Using Dimethylaluminumhydride
- Analysis of Distributed Feedback Semiconductor Laser-Electroabsorptiorn Modulator Integrated Light Source, Including Gain-Coupled Structure
- Absorptive-Grating Gain-Coupled Distributed-Feedback MQW Lasers with Low Threshold Current and High Single-Longitudinal-Mode Yield
- InGaAs/InP Gain-Coupled Distributed Feedback Laser with a Corrugated Active Layer
- Replacements of Amino Acid Residues at Subsites and Their Effects on the Catalytic Properties of Rhizomucor pusillus Pepsin, an Aspartic Proteinase from Rhizomucor pusillus
- Characterization of Indium Segregation in Metalorganic Vapor Phase Epitaxy-Grown InGaP by Schottky Barrier Height Measurement
- Microscopy and Electrical Properties of Ge/Ge Interfaces Bonded by Surface-Activated Wafer Bonding Technology
- Design and Fabrication of Monolithically Integrated Lateral-Electrode Etched-Mirror Laser with Y-Branch Single-Mode Waveguide in GaAs/AlGaAs
- Formation of High-Contrast Periodic Corrugations by Optimizing Optical Parameters of Photoresists in 325 nm Laser Holographie Exposure
- Characterization of P- and N-Type Impurity Diffusions in GaAs from Doped Silica Films
- Fabrication of TE/TM Mode Splitter Using Completely Buried GaAs/GaAlAs Waveguide
- Decrease in Deposition Rate and Improvement of Step Coverage by CF_4 Addition to Plasma-Enhanced Chemical Vapor Deposition of Silicon Oxide Films
- Preparation of Low-Dielectric-Constant F-Doped SiO2 Films by Plasma-Enhanced Chemical Vapor Deposition
- Preparation of Low Dielectric Constant F-Doped SiO_2 Films by PECVD
- High-Temperature Annealing Effect of Si in Group-V Ambient Prior to Heteroepitaxy of InAs in Metal--Organic Vapor Phase Epitaxy
- Diffraction Efficiency of Holographic Grating Formed in Au Nano particle-Doped Sol–Gel Silica Film by Laser Irradiation
- Gas Phase Doping of Arsenic into (100), (110), and (111) Germanium Substrates Using a Metal--Organic Source
- Dependences of Initial Nucleation on Growth Conditions of InAs on Si by Micro-Channel Selective-Area Metal–Organic Vapor Phase Epitaxy
- Fabrication of Multiple-Electrode Chirped-Grating-Tunable Distributed-Feedback Lasers
- Fabrication and Characteristics of an Integrated DFB Laser/Amplifier Having Reactive-Ion-Etched Tilted End Facets
- Four Channel Ridge DFB Laser Array for 1.55μm CWDM Systems by Wide-Stripe Selective Area MOVPE(Semiconductor Devices,Recent Advances in Integrated Photonic Devices)
- Ultrathin Body InGaAs-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors with InP Passivation Layers on Si Substrates Fabricated by Direct Wafer Bonding
- Analysis of GaInAsP Surfaces by Contact-Angle Measurement for Wafer Direct Bonding with Garnet Crystals
- Direct Bonding between Quaternary Compound Semiconductor and Garnet Crystals for Integrated Optical Isolator
- Factors Determining the Generation of Polycrystalline Growth over Masks in Selective-Area Metalorganic Vapor Phase Epitaxy : Gas-Phase Concentration Analysis
- Special Section on Recent Advances in Integrated Photonic Devices
- Size and Shape Transformation of TiO_2 Nanoparticles by Irradiation of 308-nm Laser Beam
- ？？/Ge High Mobility Channel Integration of InGaAs n-Channel and Ge p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Self-Aligned Ni-Based Metal Source/Drain Using Direct Wafer Bonding
- Effects of Strain on the Performance of InGaAs/GaAsP Multiple-Quantum-Well Solar Cells Correlated with In situ Curvature Monitoring
- Effect of GaAs Step Layer on InGaAs/GaAsP Quantum Well Solar Cells
- Impact of Strain Accumulation on InGaAs/GaAsP Multiple-Quantum-Well Solar Cells : Direct Correlation between In situ Strain Measurement and Cell Performances (Special Issue : Photovoltaic Science and Engineering)
- Optimization of Gas-Switching Sequence for InGaAs/GaAsP Superlattice Structures Using In situ Wafer Curvature Monitoring (Special Issue : Photovoltaic Science and Engineering)
- Surface Reaction Kinetics in Metalorganic Vapor Phase Epitaxy of GaAs through Analyses of Growth Rate Profile in Wide-Gap Selective-Area Growth
- Strain-Balanced InGaAs/GaAsP Superlattice Solar Cell with Enhanced Short-Circuit Current and a Minimal Drop in Open-Circuit Voltage
- Kinetics of Subsurface Formation during Metal–Organic Vapor Phase Epitaxy Growth of InP and InGaP
- Design and Simulation of InP1×N Planar Optical Switch Based on Ream Deflection
- Surface Reaction Kinetics of InP and InAs Metalorganic Vapor Phase Epitaxy Analyzed by Selective Area Growth Technique
- Effects of Background Zn Doping on the Performance of InGaAs/GaAsP Multiple Quantum Well Solar Cells Grown by a Planetary Metal Organic Vapor Phase Epitaxy Reactor
- Effects of Strain on the Performance of InGaAs/GaAsP Multiple-Quantum-Well Solar Cells Correlated with In situ Curvature Monitoring
- Control of In Surface Segregation and Inter-Diffusion in GaAs on InGaP Grown by Metal--Organic Vapor Phase Epitaxy
- III-V/Ge High Mobility Channel Integration of InGaAs n-Channel and Ge p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Self-Aligned Ni-Based Metal Source/Drain Using Direct Wafer Bonding
- Zn and S Doping in GaAs Selective Area Growth by Metal–Organic Vapor Phase Epitaxy
- Electrical and Photoconductive Properties at 1.8 K of Germanium p+--i Junction Device Fabricated by Surface-Activated Wafer Bonding
- All-Optical Flip-Flop Based on Coupled-Mode DBR Laser Diode for Optically Clocked Operation
- Dynamic Operation of All-Optical Flip-Flops with Distributed Bragg Reflectors for Self-Routing of 10-Gbit/s Optical Packets
- Precursor Evaluation for Cu-Supercritical Fluid Deposition Based on Adhesion Properties and Surface Morphology
- Investigation of the Modulation Efficiency of InGaAsP/InP Ridge Waveguide Phase Modulators at 1.55 μm
- Kinetic Analysis of Surface Adsorption Layer in GaAs(001) Metalorganic Vapor Phase Epitaxy by In situ Reflectance Anisotropy Spectroscopy
- Comparison of Organic and Hydride Group V Precursors in Terms of Surface Kinetics in Wide-Gap Selective Area Metalorganic Vapor Phase Epitaxy
- Kinetic Analysis of InAsP by Metalorganic Vapor Phase Epitaxy Selective Area Growth Technique
- Low Temperature Metal Organic Vapor Phase Epitaxial Growth of AlN by Pulse Injection Method at 800 °C
- Simple Kinetic Model of ECR Reactive Ion Beam Etching Reactor for the Optimization of GaAs Etching Process
- Size Controlled Formation of Gold Nanoparticles Using Photochemical Grwoth and Photothermal Size Reduction by 308 nm Laser Pulses
- First Demonstration of TE Mode Nonreciprocal Propagation in an InGaAsP/InP Active Waveguide for an Integratable Optical Isolator
- InGaAsP Grating Couplers Fabricated Using Complementary-Metal--Oxide--Semiconductor-Compatible III--V-on-Insulator on Si
- Competitive Kinetics Model to Explain Surface Segregation of Indium during InGaP Growth by Using Metal Organic Vapor Phase Epitaxy
- AlN Waveguide with GaN/AlN Quantum Wells for All-Optical Switch Utilizing Intersubband Transition
- Development of a vertical optical coupler using a slanted etching of InP/InGaAsP waveguide
- Compact Optical Buffer Module for Intra-Packet Synchronization Based on InP 1×8 Switch and Silica-Based Delay Line Circuit
- GaN Selective Area Metal–Organic Vapor Phase Epitaxy: Prediction of Growth Rate Enhancement by Vapor Phase Diffusion Model
- Fabrication and Measurement of AlN Cladding AlN/GaN Multiple-Quantum-Well Waveguide for All-Optical Switching Devices Using Intersubband Transition
- Intersubband Transition at 1.52 μm in GaN/AlN Multiple Quantum Wells Grown by Metal Organic Vapor Phase Epitaxy
- Factors Determining the Generation of Polycrystalline Growth over Masks in Selective-Area Metalorganic Vapor Phase Epitaxy: Gas-Phase Concentration Analysis
- Comparison of Semiconductor--Electrolyte and Semiconductor--Metal Schottky Junctions Using AlGaN/GaN Photoelectrochemical Electrode
- Compact Optical Buffer Module for Intra-Packet Synchronization Based on InP 1×8 Switch and Silica-Based Delay Line Circuit