Electrical and Photoconductive Properties at 1.8 K of Germanium p+--i Junction Device Fabricated by Surface-Activated Wafer Bonding

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We have evaluated the electrical and photoconductive properties of a Ge p+--i junction device, fabricated by surface-activated wafer bonding (SAB) technology, at temperatures of 1.8--5 K. The p+--i junction consists of two bonded layers, Ge heavily doped with Ga at a concentration of 1\times 10^{16} cm-3 and non-doped intrinsic Ge. The bonded Ge wafer was diced to a 1-mm cubic test element having two layers of thickness 0.5 mm and two facing electrodes. We measured the current--voltage characteristics of the device at 1.8--5 K, and its photoresponses against stepped illumination with far-infrared light at 1.8 K. The device shows the expected cryogenic performance in terms of electrical and photoconductive properties, demonstrating the promising applicability of SAB-processed Ge p+--i junction devices in blocked-impurity-band-type Ge detectors.
2011-06-25