Cryogenic readout electronics for space borne far-infrared image sensors(Satellite Systems,ICSANE 2010 (International Conference on Space, Aeronautical and Navigational Electronics))

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概要

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• We have been developing low power cryogenic readout electronics for space borne large format far-infrared image sensors. As the circuit elements, a fully-depleted-silicon-on-insulator (FD-SOI) CMOS process was selected because they keep good static performance even at 4.2 K where many bulk-CMOS transistors suffer from anomalous behaviors. We have designed and fabricated several test circuits with the FD-SOI CMOS process and confirmed that a operational amplifier successfully operates with open loop gain to be over 1000 and with power consumption to be around 1.3μW as designed. In our presentation, we will make a report on some measurement results of the test circuits.

• 2010-10-20

著者

• WADA Takehiko

  Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency

• NAGATA Hirohisa

  Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency

• Wada Takehiko

  Institute Of Multidisciplinary Research For Advanced Materials Tohoku University

• Ikeda Hirokazu

  Institute of Space and Astronautical Science Japan Aerospace Exploration Agency

• Arai Yasuo

  High Energy Accelerator Research Organization

• Ohno Morifumi

  National Institute of Advanced Industrial Science and Technology

• Wada Takehiko

  Institute Of Space And Astronautical Science Japan Aerospace Exploration Agency

• Nagata Hirohisa

  Institute Of Space And Astronautical Science Japan Aerospace Exploration Agency

• 大野 守史

  沖セミコンダクター(株)

• Ohno Morifumi

  Semiconductor Technology Laboratory Oki Electric Industry Co. Ltd.

• 大野 守史

  静岡大学電子工学研究所

• 大野 守史

  (株) ソルテック

• IKEDA Hirokazu

  Institute of Space and Astronautical Science (ISAS), Japan Aerospace Exploration Agency (JAXA)

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