InGaAsP Grating Couplers Fabricated Using Complementary-Metal--Oxide--Semiconductor-Compatible III--V-on-Insulator on Si
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概要
- 論文の詳細を見る
We have demonstrated InGaAsP grating couplers using the III--V-on-insulator (III--V-OI) on a Si wafer. The direct bonding of an InGaAsP/InP wafer and a thermally oxidized SiO<inf>2</inf>/Si wafer allows us to fabricate the grating couplers through the standard complementary metal--oxide--semiconductor (CMOS)-compatible process. The grating coupler, which was designed by the time-domain beam-propagation method (TD-BPM), exhibited a coupling efficiency of 38%, the 3 dB bandwidth of 37 nm, and the 1 dB lateral alignment tolerance of \pm 2.5 μm for the c-band wavelength, making it suitable for the III--V CMOS photonics platform.
- 2013-04-25
著者
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Takenaka Mitsuru
Department Of Electrical Engineering And Information Systems School Of Engineering The University Of
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Sugiyama Masakazu
Department Of Biotechnology Graduate School Of Agriculture And Life Sciences The University Of Tokyo
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Yokoyama Masafumi
Department Of Electrical Engineering And Information Systems The University Of Tokyo
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Takagi Shinichi
Department Of Electrical Engineering And Information Systems The University Of Tokyo
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Nakano Yoshiaki
Department Of Electrical Engineering And Information Systems The University Of Tokyo
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