Size Controlled Formation of Gold Nanoparticles Using Photochemical Grwoth and Photothermal Size Reduction by 308 nm Laser Pulses
スポンサーリンク
概要
- 論文の詳細を見る
We synthesized gold nanoparticles (mean diameter 8.3 nm, standard deviation 2.7 nm) from tetrachloroaurate complex (AuCl$_{4}^{-}$) solution by 308 nm laser irradiation without the use of any stabilizers. The combination of photochemical particle growth with photothermal particle size reduction by 308 nm laser irradiation resulted in a narrow size distribution. Photothermal size reduction controlled the maximum diameter of gold nanoparticles which existed in the system, and photochemical growth controlled their size distribution. Using this technique, we were able to control the diameter and the size distribution of gold naoparticles. We propose a simple model for estimating the maximum diameter of gold nanoparticles formed in the system by the irradiation of nanosecond laser pulses. The maximum diameter of particles is determined by the competition between heating of a particle by absorbed photon energy and heat dissipation from the particle surface to the surroundings.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-10-15
著者
-
Inasawa Susumu
Department Of Chemical System Engineering Graduate School Of Engineering The University Of Tokyo
-
Sugiyama Masakazu
Department Of Biotechnology Graduate School Of Agriculture And Life Sciences The University Of Tokyo
-
Koda Seiichiro
Department Of Chemical Engineering Facutly Of Engineering The University Of Tokyo
-
Inasawa Susumu
Department of Chemical System Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
関連論文
- Preparation of novel hemostatic material containing spherical porous hydroxyapatite/alginate granules
- Monolithically Integrated InGaN-Based Multicolor Light-Emitting Diodes Fabricated by Wide-Stripe Selective Area Metal-Organic Vapor Phase Epitaxy
- Intersubband Transition at 1.52μm in GaN/AlN Multiple Quantum Wells Grown by Metal Organic Vapor Phase Epitaxy
- Fabrication of Abrupt AlN/GaN Multi Quantum Wells by Low Temperature Metal Organic Vapor Phase Epitaxy
- Strong Dependence on Thickness of Room-Temperature Dielectric Constant of (100)-Oriented Pb(Mg_Nb_)O_3 Epitaxial Films Grown by Metal Organic Chemical Vapor Deposition
- Formation of Well-Aligned Thin Films of Rod-Like Nanoparticles via Solvent Evaporation : A Simulation Study
- GaN-Based High-Speed Intersubband Optical Switches
- Preparation of submicrometer-sized porous spherical hydroxyapatite agglomerates by ultrasonic spray pyrolysis technique
- Thin Body III-V-Semiconductor-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Fabricated Using Direct Wafer Bonding
- InGaAsP Photonic Wire Based Ultrasmall Arrayed Waveguide Grating Multiplexer on Si Wafer
- Dislocation-Free InGaAs on Si(111) Using Micro-Channel Selective-Area Metalorganic Vapor Phase Epitaxy
- Examination of Surface Elementary Reaction Model for Chemical Vapor Deposition of Al Using In Situ Infrared Reflection Absorption Spectroscopy : Teoretical Optimization Procedure (3)
- Elementary Surface Reaction Simulation of Aluminum Chemical Vapor Deposition from Dimethylaluminumhydride Based on Ab Initio Calculations : Theoretical Process Optimization Procedure(2)
- Kinetics of GaAs Metalorganic Chemical Vapor Deposition Studied by Numerical Analysis Based on Experimental Reaction Data
- Reaction Analysis of Aluminum Chemical Vapor Deposition from Dimethyl-aluminum-hydride Using Tubular Reactor and Fourier-Transform Infrared Spectroscopy : Theoretical Process Optimization Procedure(1)
- Pulsed-laser Irradiation to Suspended Carbon Particles in Aqueous Silver Nitrate Solution
- Evidence of Sr-Deficiency in Bi_2Sr_Ca_1Cu_2O_8 and Preparation of Stoichiometric Semiconducting Bi_2Sr_2Ca_1Cu_2O_8
- Effect of Underlayers on the Morphology and Orientation of Aluminum Films Prepared by Chemical Vapor Deposition Using Dimethylaluminumhydride
- Effect of colloidal silica addition on the formation of porous spherical α-calcium orthophosphate agglomerates by spray pyrolysis technique(Aqueous Solution Science for Ceramic Processing II)
- Pulsed-laser Irradiation of Carbonaceous Materials in AgNO_3 Solution and Its Application to Preparing Silver-activated Carbon Electrodes
- Low-Temperature Deposition of Polycrystalline Titanium Oxide Tin Film on Si Substrate Using Supercritical Carbon Dioxide Fluid
- Replacements of Amino Acid Residues at Subsites and Their Effects on the Catalytic Properties of Rhizomucor pusillus Pepsin, an Aspartic Proteinase from Rhizomucor pusillus
- Spectroscopy and Photophysics of O_2 in the Neighborhood of the Dissociation Limit in Rare Gas Solids
- High-Temperature Annealing Effect of Si in Group-V Ambient Prior to Heteroepitaxy of InAs in Metal--Organic Vapor Phase Epitaxy
- Diffraction Efficiency of Holographic Grating Formed in Au Nano particle-Doped Sol–Gel Silica Film by Laser Irradiation
- Size Reduction of Silver Particles in Aqueous Solution by Laser Irradiation
- Gas Phase Doping of Arsenic into (100), (110), and (111) Germanium Substrates Using a Metal--Organic Source
- Scale-up and Modeling of Oxygen Diffusion Electrodes for Chlorine-Alkali Electrolysis(1)Analysis of Hydrostatic Force Balance and Its Effect on Electrode Performance (論文特集号 電解科学技術の進展)
- A NOVEL LASER-INDUCED SYNTHESIS OF 1, 1-DICHLOROETHYLENE FROM 1, 1-DICHLOROETHANE
- Emission from Pulsating Combustion of Silane at a Reduced Pressure : Chemistry (incl, physical process)
- LASER-SPECTROSCOPIC MEASUREMENT OF UPTAKE COEFFICIENTS OF TRACE GASEOUS SPECIES ON AQUEOUS SURFACES
- Pressure effect on the absorption and photodissociation of O_2 near the dissociation threshold
- Emission Spectra and Relaxation Mechanism of b State O_2 in Low Temperature Ar Solids
- Kinetics of Water-Gas Shift Reaction in Supercritical Water
- Dependences of Initial Nucleation on Growth Conditions of InAs on Si by Micro-Channel Selective-Area Metal–Organic Vapor Phase Epitaxy
- Ultrathin Body InGaAs-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors with InP Passivation Layers on Si Substrates Fabricated by Direct Wafer Bonding
- Aerobic Oxidation of Cyclohexane Catalyzed by Fe(III)(5, 10, 15, 20-tetrakis(pentafluorophenyl)porphyrin)Cl in Sub- and Super-Critical Co_2
- Laser Ignition of Premixed Methanol/Air on a Slot-Nozzle Burner
- Factors Determining the Generation of Polycrystalline Growth over Masks in Selective-Area Metalorganic Vapor Phase Epitaxy : Gas-Phase Concentration Analysis
- Size and Shape Transformation of TiO_2 Nanoparticles by Irradiation of 308-nm Laser Beam
- PFR and CSTR Analyses of Supercritical Water Oxidation of Methanol
- Quantitative Study of Surface Deprotonation Induced Settling Mode Transition of Silica Colloidal Particles
- ？？/Ge High Mobility Channel Integration of InGaAs n-Channel and Ge p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Self-Aligned Ni-Based Metal Source/Drain Using Direct Wafer Bonding
- Effect of GaAs Step Layer on InGaAs/GaAsP Quantum Well Solar Cells
- Optimization of Gas-Switching Sequence for InGaAs/GaAsP Superlattice Structures Using In situ Wafer Curvature Monitoring (Special Issue : Photovoltaic Science and Engineering)
- Surface Reaction Kinetics in Metalorganic Vapor Phase Epitaxy of GaAs through Analyses of Growth Rate Profile in Wide-Gap Selective-Area Growth
- Strain-Balanced InGaAs/GaAsP Superlattice Solar Cell with Enhanced Short-Circuit Current and a Minimal Drop in Open-Circuit Voltage
- Kinetics of Subsurface Formation during Metal–Organic Vapor Phase Epitaxy Growth of InP and InGaP
- Effects of Strain on the Performance of InGaAs/GaAsP Multiple-Quantum-Well Solar Cells Correlated with In situ Curvature Monitoring
- Enhancement of Polarization Property of PZT Film by Ion-Substitution Using Rare-Earth Elements
- Ion Modification for Improvement of Insulating and Ferroelectric Properties of BiFeO3 Thin Films Fabricated by Chemical Solution Deposition
- III-V/Ge High Mobility Channel Integration of InGaAs n-Channel and Ge p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Self-Aligned Ni-Based Metal Source/Drain Using Direct Wafer Bonding
- Precursor Evaluation for Cu-Supercritical Fluid Deposition Based on Adhesion Properties and Surface Morphology
- Ferroelectric Properties of Dysprosium-Substituted Lead Zirconate Titanate Thin Films Fabricated by Chemical Solution Deposition
- Dependence of Ferroelectric Properties on Thickness of BiFeO3 Thin Films Fabricated by Chemical Solution Deposition
- Comparison of Organic and Hydride Group V Precursors in Terms of Surface Kinetics in Wide-Gap Selective Area Metalorganic Vapor Phase Epitaxy
- Low Temperature Metal Organic Vapor Phase Epitaxial Growth of AlN by Pulse Injection Method at 800 °C
- Simple Kinetic Model of ECR Reactive Ion Beam Etching Reactor for the Optimization of GaAs Etching Process
- Structural and Electrical Properties of Polycrystalline Bi4-xNdxTi3O12 Ferroelectric Thin Films with in-Plane $c$-Axis Orientations
- Size Controlled Formation of Gold Nanoparticles Using Photochemical Grwoth and Photothermal Size Reduction by 308 nm Laser Pulses
- InGaAsP Grating Couplers Fabricated Using Complementary-Metal--Oxide--Semiconductor-Compatible III--V-on-Insulator on Si
- Site Occupancy Analysis on the Enhancement in Dy-Substituted Pb(Zr,Ti)O3 Film
- MOCVD Growth of Bi1.5Zn1.0Nb1.5O7 (BZN) Epitaxial Thin Films and Their Electrical Properties
- AlN Waveguide with GaN/AlN Quantum Wells for All-Optical Switch Utilizing Intersubband Transition
- Formation of BiFeO3–BiScO3 Thin Films and Their Electrical Properties
- Preparation of (001)-Oriented CaBi4Ti4O15 and SrBi4Ti4O15 Films Using LaNiO3 Nucleation Layer on Pt-passivated Si Wafer
- Perovskite Single-Phase Growth of Epitaxial Pb(Zn1/3Nb2/3)O3 Films by Alternative-Source-Gas-Introduced Metalorganic Chemical Vapor Deposition
- Development of a vertical optical coupler using a slanted etching of InP/InGaAsP waveguide
- Infrared multiple photon dissociation of cyclobutanone.
- An ESR Study of Monomeric Cobalt Oxygen Complexes in Solutions
- Fabrication and Measurement of AlN Cladding AlN/GaN Multiple-Quantum-Well Waveguide for All-Optical Switching Devices Using Intersubband Transition
- Intersubband Transition at 1.52 μm in GaN/AlN Multiple Quantum Wells Grown by Metal Organic Vapor Phase Epitaxy
- Strong Dependence on Thickness of Room-Temperature Dielectric Constant of (100)-Oriented Pb(Mg1/3Nb2/3)O3 Epitaxial Films Grown by Metal Organic Chemical Vapor Deposition
- Factors Determining the Generation of Polycrystalline Growth over Masks in Selective-Area Metalorganic Vapor Phase Epitaxy: Gas-Phase Concentration Analysis
- Reaction of hydrogen atoms with acrylaldehyde.
- Comparison of Semiconductor--Electrolyte and Semiconductor--Metal Schottky Junctions Using AlGaN/GaN Photoelectrochemical Electrode
- A Model of Silica Dissolution Based on Acid Dissociation of Internal Silanol