Ion Modification for Improvement of Insulating and Ferroelectric Properties of BiFeO3 Thin Films Fabricated by Chemical Solution Deposition
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概要
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Ion modification techniques for improving the insulating and ferroelectric properties of BiFeO3 (BFO) thin films are reported. Rare-earth-substituted BFO films with chemical compositions of Bi1.00-xRExFe1.00O3 [RE = La and Nd] were fabricated on (111)Pt/TiO2/SiO2/(100)Si substrates using a chemical solution deposition technique. Well-saturated $P$-$E$ curves were obtained for La3+- and Nd3+-substituted BFO films, while the curve of a nonsubstituted BFO film was distorted due to the leakage current. Remanent polarization ($P_{\text{r}}$) values measured at 10 K were respectively 44 and 51 μC/cm2, for La3+- and Nd3+-substituted BFO films, which are significantly superior to conventional Pb-free ferroelectrics.
- 2005-04-10
著者
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Nakaki Hiroshi
Department Of Chemistry Sophia University
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Ueno Risako
Department Of Innovative And Engineered Materials Interdisciplinary Graduate School Of Science And E
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Koda Seiichiro
Department Of Chemical Engineering Facutly Of Engineering The University Of Tokyo
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Uchida Hiroshi
Department Of Anesthesia Tottori Prefectural Central Hospital
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Funakubo Hiroshi
Department of Innovative Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
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Nakaki Hiroshi
Department of Chemistry, Sophia University, Tokyo 102-8554, Japan
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Funakubo Hiroshi
Department of Innovative and Engineered Material, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Ueno Risako
Department of Innovative Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
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