Crystal Structure and Electrical Properties of Epitaxial BiFeO3 Thin Films Grown by Metal Organic Chemical Vapor Deposition
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概要
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BiFeO3 thin films with various thicknesses were grown on $\text{(100)$_{c}$SrRuO$_{3}$}\parallel\text{(100)SrTiO$_{3}$}$ substrates at 620°C by metalorganic chemical vapor deposition (MOCVD) for the first time. X-ray diffraction analysis revealed cube-on-cube epitaxial growth of phase-pure BiFeO3 films with (001) orientation irrespective of the film thickness. Out-of-plane lattice parameter decreased with increasing the film thickness up to 100 nm, however this change with the film thickness became small above this thickness. The well saturated hysteresis loops with the remanent polarization and the coercive field values of 51 μC/cm2 and 166 kV/cm, respectively were obtained at 80 K up to 400 kV/cm for the 480-nm-thick film.
- 2005-09-10
著者
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SAITO Keisuke
Application Laboratory
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Funakubo Hiroshi
Department Of Innovative And Engineered Materials
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Ueno Risako
Department Of Innovative And Engineered Materials Interdisciplinary Graduate School Of Science And E
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Saito Keisuke
Application Laboratory, Bruker AXS, 3-9-A-6 Moriya-cho, Kanazawa-ku, Yokohama 221-0022, Japan
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Okaura Shingo
Department of Innovative and Engineered Material, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Okaura Shingo
Department of Innovative Engineered Materials, Tokyo Institute of Technology, G1-32, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
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Funakubo Hiroshi
Department of Innovative Engineered Materials, Tokyo Institute of Technology, G1-32, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
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Funakubo Hiroshi
Department of Innovative and Engineered Material, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Ueno Risako
Department of Innovative Engineered Materials, Tokyo Institute of Technology, G1-32, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
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