Crystal Structure and Dielectric Property of Bismuth Layer-Structured Dielectric Films with $c$-Axis Preferential Crystal Orientation
スポンサーリンク
概要
- 論文の詳細を見る
Thin films of bismuth layer-structured dielectrics (BLSDs), CaBi4Ti4O15, and SrBi4Ti4O15, were prepared by a chemical solution deposition (CSD) technique on various substrates, such as (111)Pt/TiO2/(100)Si, (100)LaNiO3/(111)Pt/TiO2/(100)Si, and $\text{(100)SrRuO$_{3}$}\parallel \text{(100)SrTiO$_{3}$}$ substrates. Conductive perovskite oxide LaNiO3 with (100) preferential crystal orientation was introduced into the interface between the BLSD film and the (111)Pt/TiO2/(100)Si substrate to control the crystal orientation of BLSD by lattice matching between pseudo-perovskite blocks in the BLSD crystal and the (100)LaNiO3 plane with the perovskite structure. The ($00l$) planes of BLSD crystals were preferentially oriented on the substrate surface of the (100)LaNiO3/(111)Pt/TiO2/(100)Si, whereas randomly-oriented BLSD crystals with lower crystallinity were only obtained on the surface of (111)Pt/TiO2/(100)Si substrate. The (001)-oriented BLSD films exhibited the leakage current densities below $10^{-7}$ A/cm2 at $\pm 50$ kV/cm, which is significantly lower than those for randomly-oriented films, above $10^{-6}$ A/cm2, The room-temperature dielectric constants ($\varepsilon_{\text{r}}$) of CaBi4Ti4O15 and SrBi4Ti4O15 thin films on the (100)LaNiO3/(111)Pt/TiO2/(100)Si substrate were both approximately 250, while those on the $\text{(100)SrRuO$_{3}$}\parallel \text{(100)SrTiO$_{3}$}$ substrate were approximately 220. The temperature dependence of the capacitances for the CaBi4Ti4O15 and SrBi4Ti4O15 films on the (100)LaNiO3/(111)Pt/TiO2/(100)Si substrate were approximately +17 and +10%, respectively, in the temperature range from 25 to 400 °C. These values were slightly larger than those of epitaxial BLSD films, but smaller than those of (Ba,Sr)TiO3 films.
- 2010-09-25
著者
-
Funakubo Hiroshi
Department Of Innovative And Engineered Materials
-
Kiguchi Takanori
Institute For Materials Research Tohoku University
-
Uchida Hiroshi
Department Of Anesthesia Tottori Prefectural Central Hospital
-
Mizutani Yuki
Department of Materials and Life Sciences, Sophia University, Chiyoda, Tokyo 102-8554, Japan
-
Konno Toyohiko
Institute for Material Research, Tohoku University, Sendai 980-8577, Japan
-
Kiguchi Takanori
Institute for Material Research, Tohoku University, Sendai 980-8577, Japan
-
Funakubo Hiroshi
Department of Innovative and Engineered Material, Tokyo Institute of Technology, Yokohama 226-8503, Japan
関連論文
- Direct Crystallization and Characterization of Bi_3TiTaO_9 Thin Films Prepared by Metalorganic Chemical Vapor Deposition
- Composition dependence of crystal structure and electrical properties for epitaxial films of Bi(Zn1/2Ti1/2)O3–BiFeO3 solid solution system
- Piezoelectric anomalies at the ferroelastic phase transitions of lead-free tungsten bronze ferroelectrics
- Impact of 90ﾟ-Domain Wall Motion in Pb(Zr_Ti_)O_3 Film on the Ferroelectricity Induced by an Applied Electric Field
- Thick Epitaxial Pb(Zr_,Ti_)O_3 Films Grown on (100)CaF_2 Substrates with Polar-Axis-Orientation
- Ferroelectric Property of a- /b-Axis- Oriented Epitaxial Sr_Bi_Ta_2O_9 Thin Films Grown by Metalorganic Chemical Vapor Deposition : Electrical Properties of Condensed Matter
- Structural Modulation in Oxygen Deficient Epitaxial Bi_2Sr_2Ca_1Cu_2O_X Observed by X-ray Reciprocal Space Mapping
- Bi_2Sr_2Ca_1Cu_2O_X Thin Film Deposition by Q-switched YAG Laser
- In-situ observation of a MEMS-based Pb(Zr,Ti)O3 micro cantilever using micro-Raman spectroscopy
- Orientation control of (001) and (101) in epitaxial tetragonal Pb(Zr,Ti)O3 films with (100)/(001) and (110)/(101) mixture orientations
- Effect of La substitution on Electrical Properties of Highly Oriented Bi_4Ti_3O_ Films Prepared by Metalorganic Chemical Vapor Deposition
- Twin-Free Epitaxial Films Lateral Relation between YSZ(111) and Si(111)
- Strong Dependence on Thickness of Room-Temperature Dielectric Constant of (100)-Oriented Pb(Mg_Nb_)O_3 Epitaxial Films Grown by Metal Organic Chemical Vapor Deposition
- Metalorganic Chemical Vapor Deposition of Epitaxial Perovskite SrIrO_3 Films on (100)SrTiO_3 Substrates
- Epitaxial Growth of β-FeSi_2 on Single Crystal Insulator
- Crystal Structure Analysis of Metalorganic Chemical Vapor Deposition-β-FeSi_2 Thin Film by X-ray Diffraction Measurement
- Thermal Stability of SrRuO_3 Bottom Electrode and Electric Property of Pb(Zr, Ti)O_3 Thin Film Deposited on SrRuO_3
- Quantitative Effects of Preferred Orientation and Impurity Phases of Ferroelectric Properties of SrBi_2(Ta_Nb_x)_2O_9 Thin Films Measured by X-Ray Diffraction Reciprocal Space Mapping
- Y_2O_3-Stabilized ZrO_2 Thin Films Prepared by Metalorganic Chemical Vapor Deposition
- Residual Strain and Crystal Structure of BaTiO_3-SrTiO_3 Thin Films Prepared by Metal Organic Chemical Vapor Deposition
- Film Thickness Dependence of Dielectric Property and Crystal Structureof PbTiO_3 Film Prepared on Pt/SiO_2/Si Substrate by Metal Organic Chemical Vapor Deposition
- Spontaneous Polarization of Neodymium-Substituted Bi_4Ti_3O_ Estimated from Epitaxially Grown Thin Films with in-Plane c-Axis Orientations
- Synthesis and Electrical Properties of Sr-and Nb-Cosubstituted Bi_Sr_xTi_NbO_ Polycrystalline Thin Films
- Fabrication of M^-Substituted and M^/V^-Cosubstituted Bismuth Titanate Thin Films [M = lanthanoid] by Chemical Solution Deposition Technique
- Combinatorial preparation process of Pb(Zr_Ti_x)O_3 thin films by chemical solution deposition method
- Preparation of Pb(Zr_x, Ti_)O_3 Thin Films by Source Gas Pulse-Introduced Metalorganic Chemical Vapor Deposition
- Improvement of Property of Pb(Zr_xTi_)O_3 Thin Film Prepared by Source Gas Pulse-Introduced Metalorganic Chemical Vapor Deposition
- Raman Spectroscopic Characterization of Tetragonal PbZr_xTi_O_3 Thin Films : A Rapid Evaluation Method for c-Domain Volume
- Growth of Epitaxial β-FeSi_2 Thin Film on Si(001) by Metal-Organic Chemical Vapor Deposition
- Effect of Strain in Epitaxially Grown SrRuO_3 Thin Films on Crystal Structure and Electric Properties
- Cation Distribution and Structural Instability in Bi_La_xTi_3O_
- Raman Spectroscopic Fingerprint of Ferroelectric SrBi_2Ta_2O_9 Thin Films: A Rapid Distinction Method for Fluorite and Pyrochlore Phases : Electrical Properties of Condensed Matter
- Preparation of Orientation-Controlled Polycrystalline Pb(Zr, Ti)O_3 Thick Films on (100)Si Substrates by Metalorganic Chemical Vapor Deposition and Their Electrical Properties
- Characterization of Ferroelectric Property of C-Axis- and Non-C-Axis-Oriented Epitaxially Grown Bi_2VO_ Thin Films : Electrical Properties of Condonsed Matter
- Local Epitaxial Growth of (103) One-Axis-Oriented SrBi_2Ta_2O_9 Thin Films Prepared at Low Deposition Temperature by Metalorganic Chemical Vapor Deposition and Their Electrical Properties
- Interface and Domain Structures of (116)-Oriented SrBi_2Ta_2O_9 Thin Film Epitaxially Grown on (110) SrTiO_3 Single Crystal
- Interface and Defect Structures of (001)-Oriented SrBi_2Ta_2O_9 Thin Film Epitaxially Grown on (001) SrTiO_3 Single Crystal
- Low Temperature Deposition of Pb(Zr,Ti)O_3 Film by Source Gas Pulse-Introduced Metalorganic Chemical Vapor Deposition : Electrical Properties of Condensed Matter
- Metalorganic Chemical Vapor Deposition of Conductive CaRuO_3 Thin Films
- Characterization of Hafnium Oxide Thin Films by Source Gas Pulse Introduced Metalorganic Chemical Vapor Deposition Using Amino-Family Hf Precursors
- Composition Control of Pb(Zr_xTi_)O_3 Thin Films Prepared by Metalorganic Chemical Vapor Deposition
- Preparation of SrBi_2Ta_2O_9 Thin Films Consisting of Uniform Grains at Low Temperature by Metalorganic Chemical Vapor Deposition : Electrical Properties of Condensed Matter
- Growth of Epitaxial SrBi_2Ta_2O_9 Thin Films by Metalorganic Chemical Vapor Deposition
- Growth Behavior of c-Axis-Oriented Epitaxial SrBi_2Ta_2O_9 Films on SrTiO_3 Substrates with Atomic Scale Step Structure
- Degradation-free dielectric property using bismuth layer-structured dielectrics having natural superlattice structure(The 62th CerSJ Awards for Academic Achievement in Ceramic Science and Technology)
- Low Temperature Direct Crystallization of SrBi_2(Ta_Nb_x)_2O_9 Thin Films by Thermal Metalorganic Chemical Vapor Deposition and Their Properties
- Role of Non-180° Domain Switching in Electrical Properties of Pb(Zr_, Ti)O_3 Thin Films
- Method of Distinguishing SrBi_2Ta_2O_9 Phase from Fluorite Phase Using X-Ray Diffraction Reciprocal Space Mapping
- Growth of β-FeSi_2 Thin Film on Si (111) by Metal-Organic Chemical Vapor Deposition : Surfaces, Interfaces, and Films
- Effect of Deposition Temperature and Composition on the Microstructure and Electrical Property of SrBi_2Ta_2O_9 Thin Films Prepared by Metalorganic Chemical Vapor Deposition
- Metalorganic Chemical Vapor Deposition of Epitaxial SrBi_2Ta_2O_9 Thin Films and Their Crystal Structure
- Preparation of SrBi_2Ta_2O_9 Thin Films by Metalorganic Chemical Vapor Deposition from Two New Liquid Organometallic Sources
- Electronic, Structural, and Piezoelectric Properties of BiFe1-xCoxO3
- Property Improvement of 75nm-thick Directly crystallized SrBi_2Ta_2O_9 Thin Films by Pulse-introduced Metalorganic Chemical Vapor Deposition at Low Temperature : Electrical Properties of Condensed Matter
- Crystal Orientation Control of Bismuth Layer-Structured Dielectric Films Using Interface Layers of Perovskite-Type Oxides
- A-Site-Modified Perovskite Nanosheets and Their Integration into High-$\kappa$ Dielectric Thin Films with a Clean Interface
- Growth of Epitaxial {100}-Oriented KNbO3--NaNbO3 Solid Solution Films on (100)\text{cSrRuO3$\varparallel$(100)SrTiO3 by Hydrothermal Method and Their Characterization
- Preparation and Characterization of SrBi_2(Ta_Nb_x)_2O_9 Thin Films by Metalorganic Chemical Vapor Deposition from Two Organometallic Source Bottles
- Effect of Film Thickness and Crystal Orientation on the Constituent Phase in Epitaxial BiFeO3–BiCoO3 Films Grown on SrTiO3 Substrates
- Supercell Structure on Continuous Growth of Bi2Sr2Ca1Cu2Ox Film
- Effect of Strain on Supercell Structure of Bismuth Cuprate Superconducting Film
- Large Lattice Misfit on Epitaxial Thin Film: Coincidence Site Lattice Expanded on Polar Coordinate System
- Synthesis of Mica Thin Film by Pulsed Laser Deposition
- Structural Property and Electric Field Response of a Single Perovskite PbTiO3 Nanowire Using Micro X-ray Beam
- Low-Temperature Preparation of SrBi_2Ta_2O_9 Thin Films by Electron Cyclotron Resonance Plasma-Enhanced Metalorganic Chemical Vapor Deposition and Their Electrical Properties
- Direct Preparation of Crystalline SrBi_2(Ta_Nb_x)_2O_9 Thin Films by Thermal Metalorganic Chemical Vapor Deposition at Low Temperature
- Growth of Epitaxial KNbO3 Thick Films by Hydrothermal Method and Their Characterization
- Annealing Temperature Dependences of Ferroelectric and Magnetic Properties in Polycrystalline Co-Substituted BiFeO3 Films
- Crystal Structure and Dielectric Property of Bismuth Layer-Structured Dielectric Films with $c$-Axis Preferential Crystal Orientation
- Raman Spectroscopy Evaluation of Oxygen Vacancy Migration by Electrical Field in Multilayer Ceramic Capacitors
- Crystal Structure and Electrical Properties of Epitaxial BiFeO3 Thin Films Grown by Metal Organic Chemical Vapor Deposition
- Electronic and Structural Properties of BiZn0.5Ti0.5O3
- Preparation and Characterization of Ba(ZrxTi1-x)O3 Thin Films Using Reactive Sputtering Method
- Film Thickness Dependence of Ferroelectric Properties of (111)-Oriented Epitaxial Bi(Mg1/2Ti1/2)O3 Films
- Raman Spectroscopy Study of Oxygen Vacancies in PbTiO3 Thin Films Generated Heat-Treated in Hydrogen Atmosphere
- Enhancement of Polarization Property of PZT Film by Ion-Substitution Using Rare-Earth Elements
- Film Thickness Dependence of Crystal Structure in {100}-Oriented Epitaxial Pb(Zr0.65Ti0.35)O3 Films Grown on Single-Crystal Substrates with Different Thermal Expansion Coefficients
- Electronic Structure of (Pb,La)(Zr,Ti)O3 Thin Film Probed by Soft-X-Ray Spectroscopy
- In-Plane Lattice Strain Evaluation in Piezoelectric Microcantilever by Two-Dimensional X-ray Diffraction
- Crystal Orientation Dependence on Electrical Properties of Pb(Zr,Ti)O3 Thick Films Grown on Si Substrates by Metalorganic Chemical Vapor Deposition
- Compositional Dependence of Electrical Properties of Highly (100)-/(001)-Oriented Pb(Zr,Ti)O3 Thick Films Prepared on Si Substrates by Metalorganic Chemical Vapor Deposition
- Electric-Field-Induced Transverse Displacement in Pt/Pb(Zr,Ti)O3 Film/Pt/Si Structure
- In situ Observation of the Fatigue-Free Piezoelectric Microcantilever by Two-Dimensional X-ray Diffraction
- Electrooptic and Piezoelectric Properties of (Pb,La)(Zr,Ti)O3 Films with Various Zr/Ti Ratios
- Effects of A-Site Occupancy of Bismuth Ions on the Dielectric Tunable Properties of Pyrochlore Bismuth Zinc Niobate Films
- Epitaxial Growth Map for Bi4Ti3O12 Films: a Determining Factor for Crystal Orientation
- Effect of Oxygen Annealing on Ferroelectricity of BiFeO3 Thin Films Formed by Pulsed Laser Deposition
- Preparation of (111)-Oriented SrRuO3/Pt Electrodes for Pb(Zr,Ti)O3-Based Ferroelectric Capacitors: Grain Size and Roughness Impact
- Quantitative Effects of Preferred Orientation and Impurity Phases on Ferroelectric Properties of SrBi2(Ta1-xNbx)2O9 Thin Films Measured by X-Ray Diffraction Reciprocal Space Mapping
- Effect of Buffer Layer on Epitaxial Growth of YSZ Deposited on Si Substrate by Slower Q-switched 266 nm YAG Laser
- Solution-Based Fabrication of Perovskite Nanosheet Films and Their Dielectric Properties
- Fatigue Properties of Epitaxial Pb(Zr0.35Ti0.65)O3 Films with Various Volume Fractions of 90° Domains Grown on (100)cSrRuO3/(100)SrTiO3 Substrates
- Langmuir–Blodgett Fabrication of Nanosheet-Based Dielectric Films without an Interfacial Dead Layer
- Epitaxial Growth of Ferromagnetic Iron Silicide Thin Films on Silicon with Yttria-Stabilized Zirconia Buffer Layer
- Epitaxial Pt Films with Different Orientations Grown on (100)Si Substrates by RF Magnetron Sputtering
- Photoluminescence Properties from $\beta$-FeSi2 Film Epitaxially Grown on Si, YSZ and Si//YSZ
- RF Magnetron Sputtering Growth of Epitaxial SrRuO3 Films with High Conductivity
- Orientation Dependence of Epitaxial and One-Axis-Oriented (Ba0.5Sr0.5)TiO3 Films Prepared by RF Magnetron Sputtering
- Ferroelectric Properties of Dysprosium-Substituted Lead Zirconate Titanate Thin Films Fabricated by Chemical Solution Deposition
- Piezoelectric Properties of {100}-Oriented Epitaxial BiCoO3–BiFeO3 Films Measured Using Synchrotron X-ray Diffraction