Combinatorial preparation process of Pb(Zr_<1-x>Ti_x)O_3 thin films by chemical solution deposition method
スポンサーリンク
概要
- 論文の詳細を見る
Based on the image of the combinatorial synthesis, a new preparation process to fabricate Pb(Zr1-xTix)O3 (PZT) thin films with a series change in composition from only two kinds elemental solutions was developed. It is different from the conventional gol-gel method that the PZT thin films with any composition can be obtained easily from two precursor solutions, Lead-Titanium (PT) and Lead-Zirconium (PZ) metal organic chemical solutions, by mixing the two precursor solutions in the certain ratio. Pb(Zr1-xTix)O3 thin films with composition of series changed from x = 0.1 to 0.9 were fabricated from the two precursor solutions by the chemical solution deposition (CSD) method. Comparing with the conventional process, it was so fast and convenient to fabricate the PZT thin films with the any compositions by mixing the two precursor solutions of PT and PZ. The composition dependences of orientation, structure and ferroelectric property for the PZT thin films were investigated. The results showed good agreement with those of bulk and film PZT prepared by conventional method. It is concluded that this mixed solution method is applicable in the combinatorial study and results in reliable and brief process to discover new thin film materials by the CSD method.
- 公益社団法人 日本セラミックス協会の論文
- 2009-05-01
著者
-
FUNAKUBO Hiroshi
Department of Innovative and Engineered Materials, Interdisciplinary Graduate School, Tokyo Institut
-
Funakubo Hiroshi
Department Of Innovative And Engineered Materials Tokyo Institute Of Technology
-
Funakubo Hiroshi
Department Of Innovative And Engineered Materials
-
IIJIMA Takashi
National Institute of Advanced Industrial Science and Technology
-
HE Gang
Engineering Research Center of Nano-Geomaterials of Ministry of Education, China University of Geosc
-
He Gang
Engineering Research Center Of Nano-geomaterials Of Ministry Of Education China University Of Geosci
-
Funakubo Hiroshi
Department of Innovative and Engineered Material, Tokyo Institute of Technology, Yokohama 226-8503, Japan
-
Iijima Takashi
National Institute Advanced Industrial Science and Technology (AIST), Tsukuba Center 5, Tsukuba, Ibaraki 305-8565, Japan
関連論文
- Direct Crystallization and Characterization of Bi_3TiTaO_9 Thin Films Prepared by Metalorganic Chemical Vapor Deposition
- Composition dependence of crystal structure and electrical properties for epitaxial films of Bi(Zn1/2Ti1/2)O3–BiFeO3 solid solution system
- Piezoelectric anomalies at the ferroelastic phase transitions of lead-free tungsten bronze ferroelectrics
- Impact of 90ﾟ-Domain Wall Motion in Pb(Zr_Ti_)O_3 Film on the Ferroelectricity Induced by an Applied Electric Field
- Thick Epitaxial Pb(Zr_,Ti_)O_3 Films Grown on (100)CaF_2 Substrates with Polar-Axis-Orientation
- Compositional Dependence of Electrical Properties of Highly (100)-/(001)-Oriented Pb(Zr,Ti)O_3 Thick Films Prepared on Si Substrates by Metalorganic Chemical Vapor Deposition
- Ferroelectric Property of a- /b-Axis- Oriented Epitaxial Sr_Bi_Ta_2O_9 Thin Films Grown by Metalorganic Chemical Vapor Deposition : Electrical Properties of Condensed Matter
- Structural Modulation in Oxygen Deficient Epitaxial Bi_2Sr_2Ca_1Cu_2O_X Observed by X-ray Reciprocal Space Mapping
- Effect of Buffer Layer on Epitaxial Growth of YSZ Deposited on Si Substrate by Slower Q-switched 266nm YAG Laser
- Bi_2Sr_2Ca_1Cu_2O_X Thin Film Deposition by Q-switched YAG Laser
- In-situ observation of a MEMS-based Pb(Zr,Ti)O3 micro cantilever using micro-Raman spectroscopy
- Orientation control of (001) and (101) in epitaxial tetragonal Pb(Zr,Ti)O3 films with (100)/(001) and (110)/(101) mixture orientations
- Effect of La substitution on Electrical Properties of Highly Oriented Bi_4Ti_3O_ Films Prepared by Metalorganic Chemical Vapor Deposition
- Twin-Free Epitaxial Films Lateral Relation between YSZ(111) and Si(111)
- Strong Dependence on Thickness of Room-Temperature Dielectric Constant of (100)-Oriented Pb(Mg_Nb_)O_3 Epitaxial Films Grown by Metal Organic Chemical Vapor Deposition
- Preparation and Structural Analysis of Micro-patterned Pb(Zr,Ti)O_3 Film by Metalorganic Chemical Vapor Deposition
- Metalorganic Chemical Vapor Deposition of Epitaxial Perovskite SrIrO_3 Films on (100)SrTiO_3 Substrates
- Epitaxial Pt Films with Different Orientations Grown on (100)Si Substrates by RF Magnetron Sputtering
- Epitaxial Growth of (100)-Oriented β-FeSi_2 Thin Films on Insulating Substrates
- Photoluminescence Properties from β-FeSi_2 Film Epitaxially Grown on Si, YSZ and Si//YSZ
- Epitaxial Growth of β-FeSi_2 on Single Crystal Insulator
- Good Ferroelectricity of Pb (Zr, Ti) O_3 Thin Films Fabricated by Highly Reproducible Deposition on Bottom Ir Electrode at 395℃
- Crystal Structure Analysis of Metalorganic Chemical Vapor Deposition-β-FeSi_2 Thin Film by X-ray Diffraction Measurement
- Thermal Stability of SrRuO_3 Bottom Electrode and Electric Property of Pb(Zr, Ti)O_3 Thin Film Deposited on SrRuO_3
- Perovskite Single-Phase Growth of Epitaxial Pb(Zn_Nb_)O_3 Films by Alternative-Source-Gas-Introduced Metalorganic Chemical Vapor Deposition
- Quantitative Effects of Preferred Orientation and Impurity Phases of Ferroelectric Properties of SrBi_2(Ta_Nb_x)_2O_9 Thin Films Measured by X-Ray Diffraction Reciprocal Space Mapping
- Y_2O_3-Stabilized ZrO_2 Thin Films Prepared by Metalorganic Chemical Vapor Deposition
- Residual Strain and Crystal Structure of BaTiO_3-SrTiO_3 Thin Films Prepared by Metal Organic Chemical Vapor Deposition
- Film Thickness Dependence of Dielectric Property and Crystal Structureof PbTiO_3 Film Prepared on Pt/SiO_2/Si Substrate by Metal Organic Chemical Vapor Deposition
- Highly-Reproducible Preparation of Pb(Zr,Ti)O_3 Films at Low Deposition Temperature by Metal Organic Chemical Vapor Deposition
- Ion Modification for Improvement of Insulating and Ferroelectric Properties of BiFeO_3 Thin Films Fabricated by Chemical Solution Deposition
- Structural and Electrical Properties of Polycrystalline Bi_Nd_xTi_3O_ Ferroelectric Thin Films with in-Plane c-Axis Orientations
- Ferroelectric Properties of Dysprosium-Substituted Lead Zirconate Titanate Thin Films Fabricated by Chemical Solution Deposition
- Charge-Compensative Ion Substitution of La^-Substituted Bismuth Titanate Thin Films for Enhancement of Remanent Polarization
- Spontaneous Polarization of Neodymium-Substituted Bi_4Ti_3O_ Estimated from Epitaxially Grown Thin Films with in-Plane c-Axis Orientations
- Electrical Properties of (Ca,Sr)Bi_4Ti_40_ Thin Films Fabricated Using a Chemical Solution Deposition Method
- Synthesis and Electrical Properties of Sr-and Nb-Cosubstituted Bi_Sr_xTi_NbO_ Polycrystalline Thin Films
- Fabrication of M^-Substituted and M^/V^-Cosubstituted Bismuth Titanate Thin Films [M = lanthanoid] by Chemical Solution Deposition Technique
- Combinatorial preparation process of Pb(Zr_Ti_x)O_3 thin films by chemical solution deposition method
- Preparation of Pb(Zr_x, Ti_)O_3 Thin Films by Source Gas Pulse-Introduced Metalorganic Chemical Vapor Deposition
- Improvement of Property of Pb(Zr_xTi_)O_3 Thin Film Prepared by Source Gas Pulse-Introduced Metalorganic Chemical Vapor Deposition
- Crystal Structure and Ferroelectric Property of Tungsten-substituted Bi_4Ti_3O_ Thin Films Prepared by Metal-Organic Chemical Vapor Deposition
- Raman Spectroscopic Characterization of Tetragonal PbZr_xTi_O_3 Thin Films : A Rapid Evaluation Method for c-Domain Volume
- Epitaxial Growth Map for Bi_4Ti_3O_ Films : a Determining Factor for Crystal Orientation
- Crystal Orientation Dependence on Electrical Properties of Pb(Zr, Ti)O_3 Thick Films Grown on Si Substrates by Metalorganic Chemical Vapor Deposition
- Growth of Epitaxial β-FeSi_2 Thin Film on Si(001) by Metal-Organic Chemical Vapor Deposition
- Effect of Strain in Epitaxially Grown SrRuO_3 Thin Films on Crystal Structure and Electric Properties
- Cation Distribution and Structural Instability in Bi_La_xTi_3O_
- Raman Spectroscopic Fingerprint of Ferroelectric SrBi_2Ta_2O_9 Thin Films: A Rapid Distinction Method for Fluorite and Pyrochlore Phases : Electrical Properties of Condensed Matter
- Preparation of Orientation-Controlled Polycrystalline Pb(Zr, Ti)O_3 Thick Films on (100)Si Substrates by Metalorganic Chemical Vapor Deposition and Their Electrical Properties
- Characterization of Ferroelectric Property of C-Axis- and Non-C-Axis-Oriented Epitaxially Grown Bi_2VO_ Thin Films : Electrical Properties of Condonsed Matter
- Local Epitaxial Growth of (103) One-Axis-Oriented SrBi_2Ta_2O_9 Thin Films Prepared at Low Deposition Temperature by Metalorganic Chemical Vapor Deposition and Their Electrical Properties
- Interface and Domain Structures of (116)-Oriented SrBi_2Ta_2O_9 Thin Film Epitaxially Grown on (110) SrTiO_3 Single Crystal
- Interface and Defect Structures of (001)-Oriented SrBi_2Ta_2O_9 Thin Film Epitaxially Grown on (001) SrTiO_3 Single Crystal
- Low Temperature Deposition of Pb(Zr,Ti)O_3 Film by Source Gas Pulse-Introduced Metalorganic Chemical Vapor Deposition : Electrical Properties of Condensed Matter
- Metalorganic Chemical Vapor Deposition of Conductive CaRuO_3 Thin Films
- Characterization of Hafnium Oxide Thin Films by Source Gas Pulse Introduced Metalorganic Chemical Vapor Deposition Using Amino-Family Hf Precursors
- Composition Control of Pb(Zr_xTi_)O_3 Thin Films Prepared by Metalorganic Chemical Vapor Deposition
- Preparation of SrBi_2Ta_2O_9 Thin Films Consisting of Uniform Grains at Low Temperature by Metalorganic Chemical Vapor Deposition : Electrical Properties of Condensed Matter
- Orientation Control of Metalorganic Chemical Vapor Deposition-Bi_4Ti_3O_ Thin Film by Sequential Source Gas Supply Method
- Growth of Epitaxial SrBi_2Ta_2O_9 Thin Films by Metalorganic Chemical Vapor Deposition
- Growth Behavior of c-Axis-Oriented Epitaxial SrBi_2Ta_2O_9 Films on SrTiO_3 Substrates with Atomic Scale Step Structure
- Degradation-free dielectric property using bismuth layer-structured dielectrics having natural superlattice structure(The 62th CerSJ Awards for Academic Achievement in Ceramic Science and Technology)
- Low Temperature Direct Crystallization of SrBi_2(Ta_Nb_x)_2O_9 Thin Films by Thermal Metalorganic Chemical Vapor Deposition and Their Properties
- Role of Non-180° Domain Switching in Electrical Properties of Pb(Zr_, Ti)O_3 Thin Films
- Method of Distinguishing SrBi_2Ta_2O_9 Phase from Fluorite Phase Using X-Ray Diffraction Reciprocal Space Mapping
- Growth of β-FeSi_2 Thin Film on Si (111) by Metal-Organic Chemical Vapor Deposition : Surfaces, Interfaces, and Films
- Bi_M_xTiTa0_9 (M=La or Nd) Ceramics with High Mechanical Quality Factor Q_m
- Effect of Deposition Temperature and Composition on the Microstructure and Electrical Property of SrBi_2Ta_2O_9 Thin Films Prepared by Metalorganic Chemical Vapor Deposition
- Metalorganic Chemical Vapor Deposition of Epitaxial SrBi_2Ta_2O_9 Thin Films and Their Crystal Structure
- Preparation of SrBi_2Ta_2O_9 Thin Films by Metalorganic Chemical Vapor Deposition from Two New Liquid Organometallic Sources
- Electronic, Structural, and Piezoelectric Properties of BiFe1-xCoxO3
- Property Improvement of 75nm-thick Directly crystallized SrBi_2Ta_2O_9 Thin Films by Pulse-introduced Metalorganic Chemical Vapor Deposition at Low Temperature : Electrical Properties of Condensed Matter
- Crystal Orientation Control of Bismuth Layer-Structured Dielectric Films Using Interface Layers of Perovskite-Type Oxides
- A-Site-Modified Perovskite Nanosheets and Their Integration into High-$\kappa$ Dielectric Thin Films with a Clean Interface
- Growth of Epitaxial {100}-Oriented KNbO3--NaNbO3 Solid Solution Films on (100)\text{cSrRuO3$\varparallel$(100)SrTiO3 by Hydrothermal Method and Their Characterization
- Preparation and Characterization of SrBi_2(Ta_Nb_x)_2O_9 Thin Films by Metalorganic Chemical Vapor Deposition from Two Organometallic Source Bottles
- Effect of Film Thickness and Crystal Orientation on the Constituent Phase in Epitaxial BiFeO3–BiCoO3 Films Grown on SrTiO3 Substrates
- Supercell Structure on Continuous Growth of Bi2Sr2Ca1Cu2Ox Film
- Effect of Strain on Supercell Structure of Bismuth Cuprate Superconducting Film
- Large Lattice Misfit on Epitaxial Thin Film: Coincidence Site Lattice Expanded on Polar Coordinate System
- Synthesis of Mica Thin Film by Pulsed Laser Deposition
- Structural Property and Electric Field Response of a Single Perovskite PbTiO3 Nanowire Using Micro X-ray Beam
- Low-Temperature Preparation of SrBi_2Ta_2O_9 Thin Films by Electron Cyclotron Resonance Plasma-Enhanced Metalorganic Chemical Vapor Deposition and Their Electrical Properties
- Direct Preparation of Crystalline SrBi_2(Ta_Nb_x)_2O_9 Thin Films by Thermal Metalorganic Chemical Vapor Deposition at Low Temperature
- Growth of Epitaxial KNbO3 Thick Films by Hydrothermal Method and Their Characterization
- Annealing Temperature Dependences of Ferroelectric and Magnetic Properties in Polycrystalline Co-Substituted BiFeO3 Films
- Crystal Structure and Dielectric Property of Bismuth Layer-Structured Dielectric Films with $c$-Axis Preferential Crystal Orientation
- Raman Spectroscopy Evaluation of Oxygen Vacancy Migration by Electrical Field in Multilayer Ceramic Capacitors
- Crystal Structure and Electrical Properties of Epitaxial BiFeO3 Thin Films Grown by Metal Organic Chemical Vapor Deposition
- Electronic and Structural Properties of BiZn0.5Ti0.5O3
- Preparation and Characterization of Ba(ZrxTi1-x)O3 Thin Films Using Reactive Sputtering Method
- Film Thickness Dependence of Ferroelectric Properties of (111)-Oriented Epitaxial Bi(Mg1/2Ti1/2)O3 Films
- Raman Spectroscopy Study of Oxygen Vacancies in PbTiO3 Thin Films Generated Heat-Treated in Hydrogen Atmosphere
- Enhancement of Polarization Property of PZT Film by Ion-Substitution Using Rare-Earth Elements
- Film Thickness Dependence of Crystal Structure in {100}-Oriented Epitaxial Pb(Zr0.65Ti0.35)O3 Films Grown on Single-Crystal Substrates with Different Thermal Expansion Coefficients
- Electronic Structure of (Pb,La)(Zr,Ti)O3 Thin Film Probed by Soft-X-Ray Spectroscopy
- In-Plane Lattice Strain Evaluation in Piezoelectric Microcantilever by Two-Dimensional X-ray Diffraction
- Crystal Orientation Dependence on Electrical Properties of Pb(Zr,Ti)O3 Thick Films Grown on Si Substrates by Metalorganic Chemical Vapor Deposition
- Compositional Dependence of Electrical Properties of Highly (100)-/(001)-Oriented Pb(Zr,Ti)O3 Thick Films Prepared on Si Substrates by Metalorganic Chemical Vapor Deposition