Film Thickness Dependence of Ferroelectric Properties of (111)-Oriented Epitaxial Bi(Mg1/2Ti1/2)O3 Films
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概要
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The origin of the ferroelectricity of Bi(Mg1/2Ti1/2)O3 films was investigated. Epitaxial Bi(Mg1/2Ti1/2)O3 films with film thicknesses of 50 to 800 nm were grown on (111)\text{cSrRuO3/(111)SrTiO3 substrates by pulsed laser deposition. A Bi(Mg1/2Ti1/2)O3 film was not strongly clamped from the substrate and identified to have rhombohedral symmetry with a = 0.398 nm and \alpha = 89.8°, which was independent of film thickness within 100 to 800 nm. The relative dielectric constant, remanent polarization, and coercive field of the Bi(Mg1/2Ti1/2)O3 films at room temperature were almost constant at about 250, 60 μC/cm2, and 240 kV/cm, respectively, for film thicknesses above 200 nm. These data suggest that Bi(Mg1/2Ti1/2)O3 films are ferroelectric.
- 2012-09-25
著者
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Yasui Shintaro
Department of Innovative and Engineered Materials, Tokyo Institute of Technology
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Funakubo Hiroshi
Department Of Innovative And Engineered Materials
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Ehara Yoshitaka
Department Of Engineering In Applied Chemistry Faculty Of Engineering And Resource Science Akita Uni
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Oikawa Takahiro
Department Of Innovative And Engineered Materials Interdisciplinary Graduate School Of Science And E
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Yabuta Hisato
Corporate R&D Headquarters, CANON Inc., Ota, Tokyo 146-8501, Japan
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WATANABE Takayuki
Corporate R&D Headquarters, CANON INC.
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Fukui Tetsuro
Corporate R&D Headquarters, CANON Inc., Ota, Tokyo 146-8501, Japan
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Yasui Shintaro
Department of Chemistry, Sophia University, 7-1 Kioi-cho, Chiyoda-ku, Tokyo 102-8554, Japan
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Funakubo Hiroshi
Department of Innovative and Engineered Material, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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