In-Plane Lattice Strain Evaluation in Piezoelectric Microcantilever by Two-Dimensional X-ray Diffraction
スポンサーリンク
概要
- 論文の詳細を見る
Two-dimensional X-ray diffraction (XRD2) was applied to the in-plane strain evaluation of the piezoelectric microcantilever fabricated from the (001)-/(100)-oriented Pb(Zr0.52,Ti0.48)O3 film deposited on a (001)c LaNiO3/(111) Pt/TiO2/SiO2/Si/SiO2/(001) Si substrate under the applied voltage. In-plane lattice parameters were estimated using XRD2 results with two different diffractions originated from PZT, surface normal 002/200 diffractions at $\chi = 0$ and 45° rotated 101/110 diffractions from surface normal ($\chi = 45$°). The out-of-plane and in-plane lattice parameters were linearly increased and decreased by increasing the applied voltage, regardless of the $a$- and $c$-axes. A significant 90°-domain rotation from the $a$-domain to the $c$-domain was not observed in the microcantilever. The calculated transverse piezoelectric constants ($d_{31}$) based on the in-plane strain, curvature, and $z$-displacement indicated similar values of about $-140\pm 10$ pm/V. This result shows that the in-plane lattice strain mainly contributed to the displacement of the cantilever.
- 2008-09-25
著者
-
Morioka Hitoshi
Application Scientist Xrd For Thin Film Bruker Axs K.k.
-
SAITO Keisuke
Application Laboratory
-
KUROSAWA Toshiyuki
Bruker AXS
-
Funakubo Hiroshi
Department Of Innovative And Engineered Materials
-
Kobayashi Takeshi
National Institute For Materials Science
-
Saito Keisuke
Application Laboratory, Bruker AXS, 3-9-A-6 Moriya, Kanagawa-ku, Yokohama 221-0022, Japan
-
Kurosawa Toshiyuki
Bruker AXS, 3-9 Moriya, Kanagawa-ku, Yokohama 221-0022, Japan
-
Morioka Hitoshi
Application Laboratory, Bruker AXS, 3-9-A-6 Moriya, Kanagawa-ku, Yokohama 221-0022, Japan
-
Morioka Hitoshi
Application Laboratory
-
Funakubo Hiroshi
Department of Innovative and Engineered Material, Tokyo Institute of Technology, Yokohama 226-8503, Japan
関連論文
- Direct Crystallization and Characterization of Bi_3TiTaO_9 Thin Films Prepared by Metalorganic Chemical Vapor Deposition
- Composition dependence of crystal structure and electrical properties for epitaxial films of Bi(Zn1/2Ti1/2)O3–BiFeO3 solid solution system
- A Beam Drift Reduction Device for the X-Ray Mask E-Beam Writer, EB-X2
- Piezoelectric anomalies at the ferroelastic phase transitions of lead-free tungsten bronze ferroelectrics
- Critical-Dimension Controllability of Chemically Amplified Resists for X-Ray Membrane Mask Fabrication
- Precise Delineation Characteristics of Advanced Electron Beam Mask Writer EB-X3 for Fabricating 1x X-Ray Masks
- Impact of 90゚-Domain Wall Motion in Pb(Zr_Ti_)O_3 Film on the Ferroelectricity Induced by an Applied Electric Field
- Thick Epitaxial Pb(Zr_,Ti_)O_3 Films Grown on (100)CaF_2 Substrates with Polar-Axis-Orientation
- Determination of Quasi-Crystallographic Orientations of Al-Pd-Mn Icosahedral Phase by Means of Light Figure Method
- Ferroelectric Property of a- /b-Axis- Oriented Epitaxial Sr_Bi_Ta_2O_9 Thin Films Grown by Metalorganic Chemical Vapor Deposition : Electrical Properties of Condensed Matter
- Structural Modulation in Oxygen Deficient Epitaxial Bi_2Sr_2Ca_1Cu_2O_X Observed by X-ray Reciprocal Space Mapping
- Epitaxial Yttria-stabilized Zirconia (YSZ) Film Deposited on Si(100) Substrate by YAG Laser
- Bi_2Sr_2Ca_1Cu_2O_X Thin Film Deposition by Q-switched YAG Laser
- Preparation of BiSrCaCuO Multilayers by Use of Slower Q-Switched 266nm YAG Laser : Superconductors
- Fabrication of Si Nanostructures for Single Electron Device Applications by Anisotropic Etching
- Self-Diffusion in Extrinsic Silicon Using Isotopically Enriched ^Si Layer : Semiconductors
- In-situ observation of a MEMS-based Pb(Zr,Ti)O3 micro cantilever using micro-Raman spectroscopy
- Orientation control of (001) and (101) in epitaxial tetragonal Pb(Zr,Ti)O3 films with (100)/(001) and (110)/(101) mixture orientations
- Effect of La substitution on Electrical Properties of Highly Oriented Bi_4Ti_3O_ Films Prepared by Metalorganic Chemical Vapor Deposition
- Twin-Free Epitaxial Films Lateral Relation between YSZ(111) and Si(111)
- Strong Dependence on Thickness of Room-Temperature Dielectric Constant of (100)-Oriented Pb(Mg_Nb_)O_3 Epitaxial Films Grown by Metal Organic Chemical Vapor Deposition
- Fabrication of High Performance Polymeric Microfluidic Device by a Simple Imprinting Method using a Photosensitive Sheet
- Metalorganic Chemical Vapor Deposition of Epitaxial Perovskite SrIrO_3 Films on (100)SrTiO_3 Substrates
- Epitaxial Growth of β-FeSi_2 on Single Crystal Insulator
- Crystal Structure Analysis of Metalorganic Chemical Vapor Deposition-β-FeSi_2 Thin Film by X-ray Diffraction Measurement
- Thermal Stability of SrRuO_3 Bottom Electrode and Electric Property of Pb(Zr, Ti)O_3 Thin Film Deposited on SrRuO_3
- Quantitative Effects of Preferred Orientation and Impurity Phases of Ferroelectric Properties of SrBi_2(Ta_Nb_x)_2O_9 Thin Films Measured by X-Ray Diffraction Reciprocal Space Mapping
- Y_2O_3-Stabilized ZrO_2 Thin Films Prepared by Metalorganic Chemical Vapor Deposition
- Residual Strain and Crystal Structure of BaTiO_3-SrTiO_3 Thin Films Prepared by Metal Organic Chemical Vapor Deposition
- Film Thickness Dependence of Dielectric Property and Crystal Structureof PbTiO_3 Film Prepared on Pt/SiO_2/Si Substrate by Metal Organic Chemical Vapor Deposition
- Spontaneous Polarization of Neodymium-Substituted Bi_4Ti_3O_ Estimated from Epitaxially Grown Thin Films with in-Plane c-Axis Orientations
- Synthesis and Electrical Properties of Sr-and Nb-Cosubstituted Bi_Sr_xTi_NbO_ Polycrystalline Thin Films
- Fabrication of M^-Substituted and M^/V^-Cosubstituted Bismuth Titanate Thin Films [M = lanthanoid] by Chemical Solution Deposition Technique
- Combinatorial preparation process of Pb(Zr_Ti_x)O_3 thin films by chemical solution deposition method
- Preparation of Pb(Zr_x, Ti_)O_3 Thin Films by Source Gas Pulse-Introduced Metalorganic Chemical Vapor Deposition
- Improvement of Property of Pb(Zr_xTi_)O_3 Thin Film Prepared by Source Gas Pulse-Introduced Metalorganic Chemical Vapor Deposition
- Raman Spectroscopic Characterization of Tetragonal PbZr_xTi_O_3 Thin Films : A Rapid Evaluation Method for c-Domain Volume
- Growth of Epitaxial β-FeSi_2 Thin Film on Si(001) by Metal-Organic Chemical Vapor Deposition
- Effect of Strain in Epitaxially Grown SrRuO_3 Thin Films on Crystal Structure and Electric Properties
- Cation Distribution and Structural Instability in Bi_La_xTi_3O_
- Raman Spectroscopic Fingerprint of Ferroelectric SrBi_2Ta_2O_9 Thin Films: A Rapid Distinction Method for Fluorite and Pyrochlore Phases : Electrical Properties of Condensed Matter
- Characteristics of Narrow Channel MOSFET Memory Based on Silicon Nanocrystals
- Effects of Interface Traps on Charge Retention Characteristics in Silicon-Quantum-Dot-Based Metal-Oxide-Semiconductor Diodes
- Characteristics of Narrow Channel MOSFET Memory Based on Silicon Nanocrystals
- Preparation of Orientation-Controlled Polycrystalline Pb(Zr, Ti)O_3 Thick Films on (100)Si Substrates by Metalorganic Chemical Vapor Deposition and Their Electrical Properties
- Characterization of Ferroelectric Property of C-Axis- and Non-C-Axis-Oriented Epitaxially Grown Bi_2VO_ Thin Films : Electrical Properties of Condonsed Matter
- Local Epitaxial Growth of (103) One-Axis-Oriented SrBi_2Ta_2O_9 Thin Films Prepared at Low Deposition Temperature by Metalorganic Chemical Vapor Deposition and Their Electrical Properties
- Interface and Domain Structures of (116)-Oriented SrBi_2Ta_2O_9 Thin Film Epitaxially Grown on (110) SrTiO_3 Single Crystal
- Interface and Defect Structures of (001)-Oriented SrBi_2Ta_2O_9 Thin Film Epitaxially Grown on (001) SrTiO_3 Single Crystal
- Low Temperature Deposition of Pb(Zr,Ti)O_3 Film by Source Gas Pulse-Introduced Metalorganic Chemical Vapor Deposition : Electrical Properties of Condensed Matter
- Metalorganic Chemical Vapor Deposition of Conductive CaRuO_3 Thin Films
- Analysis of Stress in Laser-Crystallized Polysilicon Thin Films by Raman Scattering Spectroscopy
- A 100 kV Electron Gun for the X-Ray Mask Writer, EB-X2
- An Approach to a High-Throughput E-Beam Writer with a Single-Gun Multiple-Path System
- Characterization of Hafnium Oxide Thin Films by Source Gas Pulse Introduced Metalorganic Chemical Vapor Deposition Using Amino-Family Hf Precursors
- Composition Control of Pb(Zr_xTi_)O_3 Thin Films Prepared by Metalorganic Chemical Vapor Deposition
- Preparation of SrBi_2Ta_2O_9 Thin Films Consisting of Uniform Grains at Low Temperature by Metalorganic Chemical Vapor Deposition : Electrical Properties of Condensed Matter
- Growth of Epitaxial SrBi_2Ta_2O_9 Thin Films by Metalorganic Chemical Vapor Deposition
- Growth Behavior of c-Axis-Oriented Epitaxial SrBi_2Ta_2O_9 Films on SrTiO_3 Substrates with Atomic Scale Step Structure
- Degradation-free dielectric property using bismuth layer-structured dielectrics having natural superlattice structure(The 62th CerSJ Awards for Academic Achievement in Ceramic Science and Technology)
- Low Temperature Direct Crystallization of SrBi_2(Ta_Nb_x)_2O_9 Thin Films by Thermal Metalorganic Chemical Vapor Deposition and Their Properties
- Role of Non-180° Domain Switching in Electrical Properties of Pb(Zr_, Ti)O_3 Thin Films
- Method of Distinguishing SrBi_2Ta_2O_9 Phase from Fluorite Phase Using X-Ray Diffraction Reciprocal Space Mapping
- Growth of β-FeSi_2 Thin Film on Si (111) by Metal-Organic Chemical Vapor Deposition : Surfaces, Interfaces, and Films
- Effect of Deposition Temperature and Composition on the Microstructure and Electrical Property of SrBi_2Ta_2O_9 Thin Films Prepared by Metalorganic Chemical Vapor Deposition
- Metalorganic Chemical Vapor Deposition of Epitaxial SrBi_2Ta_2O_9 Thin Films and Their Crystal Structure
- Preparation of SrBi_2Ta_2O_9 Thin Films by Metalorganic Chemical Vapor Deposition from Two New Liquid Organometallic Sources
- Electronic, Structural, and Piezoelectric Properties of BiFe1-xCoxO3
- Property Improvement of 75nm-thick Directly crystallized SrBi_2Ta_2O_9 Thin Films by Pulse-introduced Metalorganic Chemical Vapor Deposition at Low Temperature : Electrical Properties of Condensed Matter
- Crystal Orientation Control of Bismuth Layer-Structured Dielectric Films Using Interface Layers of Perovskite-Type Oxides
- A-Site-Modified Perovskite Nanosheets and Their Integration into High-$\kappa$ Dielectric Thin Films with a Clean Interface
- Growth of Epitaxial {100}-Oriented KNbO3--NaNbO3 Solid Solution Films on (100)\text{cSrRuO3$\varparallel$(100)SrTiO3 by Hydrothermal Method and Their Characterization
- Preparation and Characterization of SrBi_2(Ta_Nb_x)_2O_9 Thin Films by Metalorganic Chemical Vapor Deposition from Two Organometallic Source Bottles
- Effect of Film Thickness and Crystal Orientation on the Constituent Phase in Epitaxial BiFeO3–BiCoO3 Films Grown on SrTiO3 Substrates
- Supercell Structure on Continuous Growth of Bi2Sr2Ca1Cu2Ox Film
- Effect of Strain on Supercell Structure of Bismuth Cuprate Superconducting Film
- Large Lattice Misfit on Epitaxial Thin Film: Coincidence Site Lattice Expanded on Polar Coordinate System
- MOCVD Preparation of Epitaxial SBT Films and Their Properties
- Fabrication and Characterization of Nd-Substituted Bi4Ti3O12 Thin Films with $a$- and $b$-Axis Orientations by High-Temperature Sputtering
- Synthesis of Mica Thin Film by Pulsed Laser Deposition
- Structural Property and Electric Field Response of a Single Perovskite PbTiO3 Nanowire Using Micro X-ray Beam
- Low-Temperature Preparation of SrBi_2Ta_2O_9 Thin Films by Electron Cyclotron Resonance Plasma-Enhanced Metalorganic Chemical Vapor Deposition and Their Electrical Properties
- Direct Preparation of Crystalline SrBi_2(Ta_Nb_x)_2O_9 Thin Films by Thermal Metalorganic Chemical Vapor Deposition at Low Temperature
- Growth of Epitaxial KNbO3 Thick Films by Hydrothermal Method and Their Characterization
- Annealing Temperature Dependences of Ferroelectric and Magnetic Properties in Polycrystalline Co-Substituted BiFeO3 Films
- Crystal Structure and Dielectric Property of Bismuth Layer-Structured Dielectric Films with $c$-Axis Preferential Crystal Orientation
- Raman Spectroscopy Evaluation of Oxygen Vacancy Migration by Electrical Field in Multilayer Ceramic Capacitors
- Crystal Structure and Electrical Properties of Epitaxial BiFeO3 Thin Films Grown by Metal Organic Chemical Vapor Deposition
- Effect of La substitution on Electrical Properties of Highly Oriented Bi4Ti3O12 Films Prepared by Metalorganic Chemical Vapor Deposition
- Electronic and Structural Properties of BiZn0.5Ti0.5O3
- Preparation and Characterization of Ba(ZrxTi1-x)O3 Thin Films Using Reactive Sputtering Method
- Film Thickness Dependence of Ferroelectric Properties of (111)-Oriented Epitaxial Bi(Mg1/2Ti1/2)O3 Films
- Raman Spectroscopy Study of Oxygen Vacancies in PbTiO3 Thin Films Generated Heat-Treated in Hydrogen Atmosphere
- Enhancement of Polarization Property of PZT Film by Ion-Substitution Using Rare-Earth Elements
- Film Thickness Dependence of Crystal Structure in {100}-Oriented Epitaxial Pb(Zr0.65Ti0.35)O3 Films Grown on Single-Crystal Substrates with Different Thermal Expansion Coefficients
- In-Plane Lattice Strain Evaluation in Piezoelectric Microcantilever by Two-Dimensional X-ray Diffraction
- In situ Observation of the Fatigue-Free Piezoelectric Microcantilever by Two-Dimensional X-ray Diffraction
- Quantitative Effects of Preferred Orientation and Impurity Phases on Ferroelectric Properties of SrBi2(Ta1-xNbx)2O9 Thin Films Measured by X-Ray Diffraction Reciprocal Space Mapping
- Structural Characterization of BiFeO3 Thin Films by Reciprocal Space Mapping
- Crystal Structure and Electrical Properties of {100}-Oriented Epitaxial BiCoO3–BiFeO3 Films Grown by Metalorganic Chemical Vapor Deposition