Growth of Epitaxial KNbO3 Thick Films by Hydrothermal Method and Their Characterization
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概要
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KNbO3 films were grown at 240 °C by the hydrothermal method using KOH and Nb2O5 as source materials. Film thickness increased with reaction time up to 3 h, however decreased for longer reaction times. A 16-μm-thick epitaxially grown KNbO3 film with $\{100\}_{\text{pc}}$ orientation were successfully grown on $(100)_{\text{c}}\text{SrRuO$_{3}$}\parallel \text{SrTiO$_{3}$}$ substrate for 3 h. The relative dielectric constant and dielectric loss at 100 kHz were 415 and 8%, respectively. Clear hysteresis loops originating from ferroelectricity were observed and the remanent polarization was 20 μC/cm2 at the maximum applied electric field of 220 kV/cm. The effective longitudinal piezoelectric constant, $d_{33}^{\text{eff}}$, obtained using a laser Doppler velocimeter, was 86 pm/V.
- 2009-09-25
著者
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Yazawa Keisuke
Department of Innovative and Engineered Materials, Tokyo Institute of Technology
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Yasui Shintaro
Department of Innovative and Engineered Materials, Tokyo Institute of Technology
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Funakubo Hiroshi
Department Of Innovative And Engineered Materials
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Morita Takeshi
Graduate School Of Frontier Sciences The University Of Tokyo
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Yamada Tomoaki
Department Of Innovative And Engineered Materials Tokyo Institute Of Technology
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Fujisawa Takashi
Department Of Accelerator And Medical Physics National Institute Of Radiological Sciences
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Ishikawa Mutsuo
Department Of Laboratory Medicine Shinshu University Hospital
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Kurosawa Minoru
Department Of Advanced Applied Electronics Tokyo Institute Of Technology
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Kurosawa Minoru
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, J2-1508, 4259 Nagatsuda-cho, Midori-ku, Yokohama 226-8502, Japan
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Hasegawa Tomohito
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, J2-1508, 4259 Nagatsuda-cho, Midori-ku, Yokohama 226-8502, Japan
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Hasegawa Tomohito
Department of Information Processing, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Morita Takeshi
Graduate School of Engineering, Shizuoka University, Hamamatsu 432-8561, Japan
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Morita Takeshi
Graduate School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8563, Japan
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Ishikawa Mutsuo
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, J2-1508, 4259 Nagatsuda-cho, Midori-ku, Yokohama 226-8502, Japan
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Ishikawa Mutsuo
Department of Advanced Applied Electronics, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Yasui Shintaro
Department of Chemistry, Sophia University, 7-1 Kioi-cho, Chiyoda-ku, Tokyo 102-8554, Japan
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Funakubo Hiroshi
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, J2-1508, 4259 Nagatsuda-cho, Midori-ku, Yokohama 226-8502, Japan
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Funakubo Hiroshi
Department of Innovative and Engineered Material, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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