Epitaxial Growth of β-FeSi_2 on Single Crystal Insulator
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概要
- 論文の詳細を見る
- 2004-09-15
著者
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FUNAKUBO Hiroshi
Department of Innovative and Engineered Materials, Interdisciplinary Graduate School, Tokyo Institut
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Funakubo H
Dep. Of Innovative And Engineered Materials Tokyo Inst. Of Technol.
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Funakubo H
Tokyo Inst. Technol. Yokohama Jpn
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舟窪 浩
東京工業大学大学院 総合理工学研究科 物質科学創造専攻
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SAITO Keisuke
Application Laboratory
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Saito Keisuke
Application Laboratory Analytical Division Philips Japan Ltd.
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Saito K
Institute Of Industrial Science University Of Tokyo
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Funakubo Hiroshi
Department Of Innovative And Engineered Materials
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KANEKO Satoru
Kanagawa Industrial Technology Research Institute
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AKIYAMA Kensuke
Kanagawa Industrial Technology Research Institute
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Saito Kenichi
Institute Of Industrial Science University Of Tokyo
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Fujisawa Hironori
Department Of Electrical Electronic And Computer Engineering Graduate School Of Engineering Hitneji
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Fujisawa Hironori
Graduate School Of Engineering University Of Hyogo
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Saito Kunio
Ntt Microsystem Integration Laboratories
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Akiyama K
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Kaneko Satoru
Kanagawa Industrial Technol. Center Kanagawa Jpn
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Saito K
Akita Univ. Akita Jpn
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藤沢 浩訓
Dep. Of Innovative And Engineered Materials Tokyo Inst. Of Technol.
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Saito Keisuke
Application Laboratory Bruker Axs
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Saito Kaichi
Kanagawa Industrial Technology Center
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Akiyama Kensuke
Kanagawa Industrial Technology Center, 705-1 Shimoimaizumi, Ebina, Kanagawa 243-0435, Japan
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Funakubo Hiroshi
Department of Innovative and Engineered Material, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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