Composition Control of Pb(Zr_xTi_<1-x>)O_3 Thin Films Prepared by Metalorganic Chemical Vapor Deposition
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-01-15
著者
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FUNAKUBO Hiroshi
Department of Innovative and Engineered Materials, Interdisciplinary Graduate School, Tokyo Institut
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Funakubo Hiroshi
Department Of Innovative And Engineered Materials
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NAGASHIMA Kuniharu
Department of Innovative and Engineered Materials, Interdisciplinary Graduate School of Science and
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Nagashima Kuniharu
Department Of Innovative And Engineered Materials Interdisciplinary Graduate School Of Science And E
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Funakubo Hiroshi
Department Of Innovative And Engineered Materials Interdisciplinary Graduate School Of Science And E
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Funakubo Hiroshi
Department of Innovative and Engineered Material, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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- Compositional Dependence of Electrical Properties of Highly (100)-/(001)-Oriented Pb(Zr,Ti)O_3 Thick Films Prepared on Si Substrates by Metalorganic Chemical Vapor Deposition
- Ferroelectric Property of a- /b-Axis- Oriented Epitaxial Sr_Bi_Ta_2O_9 Thin Films Grown by Metalorganic Chemical Vapor Deposition : Electrical Properties of Condensed Matter
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- In-situ observation of a MEMS-based Pb(Zr,Ti)O3 micro cantilever using micro-Raman spectroscopy
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