Low-Temperature Preparation of SrBi_2Ta_2O_9 Thin Films by Electron Cyclotron Resonance Plasma-Enhanced Metalorganic Chemical Vapor Deposition and Their Electrical Properties

概要

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A SrBi_2Ta_2O_9(SBT)thin film was prepared by electron cyclotron resonance plasma-enhanced metalorganic chemical vapor deposition(ECR-MOCVD). The deposition temperature dependence of the composition of the film was lesser than that of films prepared by conventional thermal MOCVD. An almost single phase of SBT was obtained at 610℃. The crystallinity of this film was higher than that of the film prepared by thermal MOCVD at 500℃ and subsequent heat treatment at 800℃. The leakage current density of this film was small, on the order of 10^<-8> A/cm^2 up to 240kV/cm. Moreover, two fold the remanent polarization and the coercive field at an applied electric field of 400kV/cm were 14.5 μC/cm^2 and 77kV/cm, respectively. These values were larger than those of the film prepared by thermal MOCVD at 500℃ with heat treatment at 800℃.
社団法人応用物理学会の論文
2000-09-30