Epitaxial Growth of Ferromagnetic Iron Silicide Thin Films on Silicon with Yttria-Stabilized Zirconia Buffer Layer
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概要
- 論文の詳細を見る
(110)-oriented epitaxial Fe3Si films were grown on (100) and (111) Si substrates with an epitaxial yttria-stabilized zirconia (YSZ) buffer layer by rf-magnetron sputtering. The epitaxial Fe3Si films contained a two-domain structure on the (100) substrate with a YSZ buffer layer, and a three-domain structure on the (111) substrate with a YSZ buffer layer. The coercive forces ($H_{\text{c}}$) of both epitaxial films were each approximately 40 Oe, and the saturation magnetizations ($M_{\text{s}}$) were each 850 emu/cm3, which are almost at the same level as those of bulk Fe3Si.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-01-25
著者
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Funakubo Hiroshi
Department Of Innovative And Engineered Materials
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AKIYAMA Kensuke
Kanagawa Industrial Technology Research Institute
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Kaneko Satoru
Kanagawa Industrial Technol. Center Kanagawa Jpn
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Hirabayashi Yasuo
Kanagawa Industrial Technology Center, 705-1 Shimoimaizumi, Ebina, Kanagawa 243-0435, Japan
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Kadowaki Teiko
Kanagawa Industrial Technology Center, 705-1 Shimoimaizumi, Ebina, Kanagawa 243-0435, Japan
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Kaneko Satoru
Kanagawa Industrial Technology Center, 705-1 Shimoimaizumi, Ebina, Kanagawa 243-0435, Japan
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Akiyama Kensuke
Kanagawa Industrial Technology Center, 705-1 Shimoimaizumi, Ebina, Kanagawa 243-0435, Japan
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Funakubo Hiroshi
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, J2-43, 4259 Nagatsuta-cho, Midori-ku, Yokohama 228-8505, Japan
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Funakubo Hiroshi
Department of Innovative and Engineered Material, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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