Electric-Field-Induced Transverse Displacement in Pt/Pb(Zr,Ti)O3 Film/Pt/Si Structure

概要

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The electric-field-induced displacements of a Pb(Zr,Ti)O3 (PZT) film plate with Pt/PZT/Pt/Si(100) structure were calculated by the finite element method with various parameters of sample geometry. The sample geometric parameters were the length of the top-electrode $L$ (ranging from 0.1 to 10,000 μm), the PZT film thickness $t_{\text{PZT}}$ (ranging from 0.5 to 10 μm), the substrate thickness $t_{\text{sub}}$ (ranging from 100 to 1000 μm), and the film type (whether the PZT film was continuous or side-etched). The surface transverse displacements of the PZT film were computed, which corresponded to strains measured using twisted-mode atomic force microscopy (AFM in twisted mode). Five effects that prevent the measurement of intrinsic transverse piezoelectric constant $d_{31}$ using AFM were clarified. The ideal conditions indicated that the length of the top-electrode, $L$, is less than or equal to the PZT film thickness $t_{\text{PZT}}$. The continuous PZT was etched to isolate the PZT film plate from the continuous piezoelectric film layer; however, this condition was found to be difficult to satisfy experimentally. Thus, the second-best condition was proposed.
2009-09-25