Raman Spectroscopy Evaluation of Oxygen Vacancy Migration by Electrical Field in Multilayer Ceramic Capacitors
スポンサーリンク
概要
- 論文の詳細を見る
Raman spectroscopy is used to evaluate migration behavior of oxygen vacancies in BaTiO3-based multilayer ceramic capacitors with Ni internal electrodes (Ni-MLCCs) before and after a highly accelerated life test (HALT). The $B_{1}$ phonon mode of BaTiO3 that is associated with oxygen vibration was hardened and broadened near the Ni electrodes before HALT. However, the hardening and broadening of the $B_{1}$ mode were observed near the cathodes after HALT. It is considered that the oxygen vacancies were localized near the Ni electrodes before HALT and they electromigrated toward the cathode because they have the positive charges. These results show that oxygen vacancies migrated and accumulated near the cathode under a dc bias and caused insulation resistance degradation in MLCCs. In addition, Raman spectroscopy is a powerful tool for investigation of structural defect distribution including oxygen vacancies with a relatively high spatial resolution.
- 2009-09-25
著者
-
Osada Minoru
Advanced Materials Laboratory National Institute For Materials Science
-
Funakubo Hiroshi
Department Of Innovative And Engineered Materials
-
Kishi Hiroshi
General R&d Laboratories Taiyo Yuden Co. Ltd.
-
Nishida Ken
Department Of Electronic And Photonic Systems Engineering Kochi University Of Technology
-
Katoda Takashi
Department Of Electronic And Photonic Systems Engineering Kochi University Of Technology
-
Yamamoto Takashi
Department Of Applied Chemistry Faculty Of Engineering Ehime University
-
Takeuchi Hironari
Department of Electronic and Photonic System Engineering, Kochi University of Technology, 185 Tosayamada-cho, Kami, Kochi 782-8502, Japan
-
Takeuchi Hironari
Department of Electronic and Photonic System Engineering, Kochi University of Technology, Kami, Kochi 782-8502, Japan
-
Nishide Masamichi
Department of Electronic and Photonic System Engineering, Kochi University of Technology, Kami, Kochi 782-8502, Japan
-
Nishide Masamichi
Department of Communicating Engineering, National Defense Academy, Yokosuka, Kanagawa 239-8686, Japan
-
Nishida Ken
Department of Communicating Engineering, National Defense Academy, Yokosuka, Kanagawa 239-8686, Japan
-
Nishida Ken
Department of Communications Engineering, National Defense Academy, Yokosuka, Kanagawa 239-8686, Japan
-
Funakubo Hiroshi
Department of Innovative and Engineered Material, Tokyo Institute of Technology, Yokohama 226-8503, Japan
-
Katoda Takashi
Department of Electronic and Photonic System Engineering, Kochi University of Technology, 185 Tosayamada-cho, Kami, Kochi 782-8502, Japan
関連論文
- Direct Crystallization and Characterization of Bi_3TiTaO_9 Thin Films Prepared by Metalorganic Chemical Vapor Deposition
- Composition dependence of crystal structure and electrical properties for epitaxial films of Bi(Zn1/2Ti1/2)O3–BiFeO3 solid solution system
- Piezoelectric anomalies at the ferroelastic phase transitions of lead-free tungsten bronze ferroelectrics
- Impact of 90ﾟ-Domain Wall Motion in Pb(Zr_Ti_)O_3 Film on the Ferroelectricity Induced by an Applied Electric Field
- Thick Epitaxial Pb(Zr_,Ti_)O_3 Films Grown on (100)CaF_2 Substrates with Polar-Axis-Orientation
- Ferroelectric Property of a- /b-Axis- Oriented Epitaxial Sr_Bi_Ta_2O_9 Thin Films Grown by Metalorganic Chemical Vapor Deposition : Electrical Properties of Condensed Matter
- Structural Modulation in Oxygen Deficient Epitaxial Bi_2Sr_2Ca_1Cu_2O_X Observed by X-ray Reciprocal Space Mapping
- Bi_2Sr_2Ca_1Cu_2O_X Thin Film Deposition by Q-switched YAG Laser
- In-situ observation of a MEMS-based Pb(Zr,Ti)O3 micro cantilever using micro-Raman spectroscopy
- Orientation control of (001) and (101) in epitaxial tetragonal Pb(Zr,Ti)O3 films with (100)/(001) and (110)/(101) mixture orientations
- Effect of La substitution on Electrical Properties of Highly Oriented Bi_4Ti_3O_ Films Prepared by Metalorganic Chemical Vapor Deposition
- Twin-Free Epitaxial Films Lateral Relation between YSZ(111) and Si(111)
- Strong Dependence on Thickness of Room-Temperature Dielectric Constant of (100)-Oriented Pb(Mg_Nb_)O_3 Epitaxial Films Grown by Metal Organic Chemical Vapor Deposition
- Metalorganic Chemical Vapor Deposition of Epitaxial Perovskite SrIrO_3 Films on (100)SrTiO_3 Substrates
- Epitaxial Growth of β-FeSi_2 on Single Crystal Insulator
- Crystal Structure Analysis of Metalorganic Chemical Vapor Deposition-β-FeSi_2 Thin Film by X-ray Diffraction Measurement
- Thermal Stability of SrRuO_3 Bottom Electrode and Electric Property of Pb(Zr, Ti)O_3 Thin Film Deposited on SrRuO_3
- Quantitative Effects of Preferred Orientation and Impurity Phases of Ferroelectric Properties of SrBi_2(Ta_Nb_x)_2O_9 Thin Films Measured by X-Ray Diffraction Reciprocal Space Mapping
- Y_2O_3-Stabilized ZrO_2 Thin Films Prepared by Metalorganic Chemical Vapor Deposition
- Residual Strain and Crystal Structure of BaTiO_3-SrTiO_3 Thin Films Prepared by Metal Organic Chemical Vapor Deposition
- Film Thickness Dependence of Dielectric Property and Crystal Structureof PbTiO_3 Film Prepared on Pt/SiO_2/Si Substrate by Metal Organic Chemical Vapor Deposition
- Spontaneous Polarization of Neodymium-Substituted Bi_4Ti_3O_ Estimated from Epitaxially Grown Thin Films with in-Plane c-Axis Orientations
- Synthesis and Electrical Properties of Sr-and Nb-Cosubstituted Bi_Sr_xTi_NbO_ Polycrystalline Thin Films
- Fabrication of M^-Substituted and M^/V^-Cosubstituted Bismuth Titanate Thin Films [M = lanthanoid] by Chemical Solution Deposition Technique
- Combinatorial preparation process of Pb(Zr_Ti_x)O_3 thin films by chemical solution deposition method
- Preparation of Pb(Zr_x, Ti_)O_3 Thin Films by Source Gas Pulse-Introduced Metalorganic Chemical Vapor Deposition
- Improvement of Property of Pb(Zr_xTi_)O_3 Thin Film Prepared by Source Gas Pulse-Introduced Metalorganic Chemical Vapor Deposition
- Raman Spectroscopic Characterization of Tetragonal PbZr_xTi_O_3 Thin Films : A Rapid Evaluation Method for c-Domain Volume
- Growth of Epitaxial β-FeSi_2 Thin Film on Si(001) by Metal-Organic Chemical Vapor Deposition
- Effect of Strain in Epitaxially Grown SrRuO_3 Thin Films on Crystal Structure and Electric Properties
- Oxygen Vacancy Migration and Dispersive Photoconductivity in Bi_4Ti_3O_
- Cation Distribution and Structural Instability in Bi_La_xTi_3O_
- Raman Spectroscopic Fingerprint of Ferroelectric SrBi_2Ta_2O_9 Thin Films: A Rapid Distinction Method for Fluorite and Pyrochlore Phases : Electrical Properties of Condensed Matter
- Antiferromagnetic Ordering Coupled with Phonon Mode Anomalies in Rare-Earth Cuprate NdCu_2O_4, Probed by Nuclear Quadrupole Resonance and Raman Spectroscopy(Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties)
- Preparation of Orientation-Controlled Polycrystalline Pb(Zr, Ti)O_3 Thick Films on (100)Si Substrates by Metalorganic Chemical Vapor Deposition and Their Electrical Properties
- Characterization of Ferroelectric Property of C-Axis- and Non-C-Axis-Oriented Epitaxially Grown Bi_2VO_ Thin Films : Electrical Properties of Condonsed Matter
- Local Epitaxial Growth of (103) One-Axis-Oriented SrBi_2Ta_2O_9 Thin Films Prepared at Low Deposition Temperature by Metalorganic Chemical Vapor Deposition and Their Electrical Properties
- Interface and Domain Structures of (116)-Oriented SrBi_2Ta_2O_9 Thin Film Epitaxially Grown on (110) SrTiO_3 Single Crystal
- Interface and Defect Structures of (001)-Oriented SrBi_2Ta_2O_9 Thin Film Epitaxially Grown on (001) SrTiO_3 Single Crystal
- Low Temperature Deposition of Pb(Zr,Ti)O_3 Film by Source Gas Pulse-Introduced Metalorganic Chemical Vapor Deposition : Electrical Properties of Condensed Matter
- Metalorganic Chemical Vapor Deposition of Conductive CaRuO_3 Thin Films
- Characterization of Hafnium Oxide Thin Films by Source Gas Pulse Introduced Metalorganic Chemical Vapor Deposition Using Amino-Family Hf Precursors
- Composition Control of Pb(Zr_xTi_)O_3 Thin Films Prepared by Metalorganic Chemical Vapor Deposition
- Preparation of SrBi_2Ta_2O_9 Thin Films Consisting of Uniform Grains at Low Temperature by Metalorganic Chemical Vapor Deposition : Electrical Properties of Condensed Matter
- Growth of Epitaxial SrBi_2Ta_2O_9 Thin Films by Metalorganic Chemical Vapor Deposition
- Growth Behavior of c-Axis-Oriented Epitaxial SrBi_2Ta_2O_9 Films on SrTiO_3 Substrates with Atomic Scale Step Structure
- Degradation-free dielectric property using bismuth layer-structured dielectrics having natural superlattice structure(The 62th CerSJ Awards for Academic Achievement in Ceramic Science and Technology)
- Low Temperature Direct Crystallization of SrBi_2(Ta_Nb_x)_2O_9 Thin Films by Thermal Metalorganic Chemical Vapor Deposition and Their Properties
- Role of Non-180° Domain Switching in Electrical Properties of Pb(Zr_, Ti)O_3 Thin Films
- Method of Distinguishing SrBi_2Ta_2O_9 Phase from Fluorite Phase Using X-Ray Diffraction Reciprocal Space Mapping
- Growth of β-FeSi_2 Thin Film on Si (111) by Metal-Organic Chemical Vapor Deposition : Surfaces, Interfaces, and Films
- Effect of Deposition Temperature and Composition on the Microstructure and Electrical Property of SrBi_2Ta_2O_9 Thin Films Prepared by Metalorganic Chemical Vapor Deposition
- Metalorganic Chemical Vapor Deposition of Epitaxial SrBi_2Ta_2O_9 Thin Films and Their Crystal Structure
- Preparation of SrBi_2Ta_2O_9 Thin Films by Metalorganic Chemical Vapor Deposition from Two New Liquid Organometallic Sources
- Electronic, Structural, and Piezoelectric Properties of BiFe1-xCoxO3
- Property Improvement of 75nm-thick Directly crystallized SrBi_2Ta_2O_9 Thin Films by Pulse-introduced Metalorganic Chemical Vapor Deposition at Low Temperature : Electrical Properties of Condensed Matter
- Crystal Orientation Control of Bismuth Layer-Structured Dielectric Films Using Interface Layers of Perovskite-Type Oxides
- A-Site-Modified Perovskite Nanosheets and Their Integration into High-$\kappa$ Dielectric Thin Films with a Clean Interface
- Growth of Epitaxial {100}-Oriented KNbO3--NaNbO3 Solid Solution Films on (100)\text{cSrRuO3$\varparallel$(100)SrTiO3 by Hydrothermal Method and Their Characterization
- Preparation and Characterization of SrBi_2(Ta_Nb_x)_2O_9 Thin Films by Metalorganic Chemical Vapor Deposition from Two Organometallic Source Bottles
- Effect of Film Thickness and Crystal Orientation on the Constituent Phase in Epitaxial BiFeO3–BiCoO3 Films Grown on SrTiO3 Substrates
- Supercell Structure on Continuous Growth of Bi2Sr2Ca1Cu2Ox Film
- Effect of Strain on Supercell Structure of Bismuth Cuprate Superconducting Film
- Large Lattice Misfit on Epitaxial Thin Film: Coincidence Site Lattice Expanded on Polar Coordinate System
- Synthesis of Mica Thin Film by Pulsed Laser Deposition
- Structural Property and Electric Field Response of a Single Perovskite PbTiO3 Nanowire Using Micro X-ray Beam
- Low-Temperature Preparation of SrBi_2Ta_2O_9 Thin Films by Electron Cyclotron Resonance Plasma-Enhanced Metalorganic Chemical Vapor Deposition and Their Electrical Properties
- Direct Preparation of Crystalline SrBi_2(Ta_Nb_x)_2O_9 Thin Films by Thermal Metalorganic Chemical Vapor Deposition at Low Temperature
- Growth of Epitaxial KNbO3 Thick Films by Hydrothermal Method and Their Characterization
- Annealing Temperature Dependences of Ferroelectric and Magnetic Properties in Polycrystalline Co-Substituted BiFeO3 Films
- Crystal Structure and Dielectric Property of Bismuth Layer-Structured Dielectric Films with $c$-Axis Preferential Crystal Orientation
- Raman Spectroscopy Evaluation of Oxygen Vacancy Migration by Electrical Field in Multilayer Ceramic Capacitors
- Crystal Structure and Electrical Properties of Epitaxial BiFeO3 Thin Films Grown by Metal Organic Chemical Vapor Deposition
- Electronic and Structural Properties of BiZn0.5Ti0.5O3
- Preparation and Characterization of Ba(ZrxTi1-x)O3 Thin Films Using Reactive Sputtering Method
- Film Thickness Dependence of Ferroelectric Properties of (111)-Oriented Epitaxial Bi(Mg1/2Ti1/2)O3 Films
- Raman Spectroscopy Study of Oxygen Vacancies in PbTiO3 Thin Films Generated Heat-Treated in Hydrogen Atmosphere
- Enhancement of Polarization Property of PZT Film by Ion-Substitution Using Rare-Earth Elements
- Film Thickness Dependence of Crystal Structure in {100}-Oriented Epitaxial Pb(Zr0.65Ti0.35)O3 Films Grown on Single-Crystal Substrates with Different Thermal Expansion Coefficients
- Electronic Structure of (Pb,La)(Zr,Ti)O3 Thin Film Probed by Soft-X-Ray Spectroscopy
- In-Plane Lattice Strain Evaluation in Piezoelectric Microcantilever by Two-Dimensional X-ray Diffraction
- Crystal Orientation Dependence on Electrical Properties of Pb(Zr,Ti)O3 Thick Films Grown on Si Substrates by Metalorganic Chemical Vapor Deposition
- Compositional Dependence of Electrical Properties of Highly (100)-/(001)-Oriented Pb(Zr,Ti)O3 Thick Films Prepared on Si Substrates by Metalorganic Chemical Vapor Deposition
- Electric-Field-Induced Transverse Displacement in Pt/Pb(Zr,Ti)O3 Film/Pt/Si Structure
- In situ Observation of the Fatigue-Free Piezoelectric Microcantilever by Two-Dimensional X-ray Diffraction
- Electrooptic and Piezoelectric Properties of (Pb,La)(Zr,Ti)O3 Films with Various Zr/Ti Ratios
- Effects of A-Site Occupancy of Bismuth Ions on the Dielectric Tunable Properties of Pyrochlore Bismuth Zinc Niobate Films
- Epitaxial Growth Map for Bi4Ti3O12 Films: a Determining Factor for Crystal Orientation
- Antiferromagnetic Ordering Coupled with Phonon Mode Anomalies in Rare-Earth Cuprate NdCu_2O_4, Probed by Nuclear Quadrupole Resonance and Raman Spectroscopy(Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties)
- Effect of Oxygen Annealing on Ferroelectricity of BiFeO3 Thin Films Formed by Pulsed Laser Deposition
- Preparation of (111)-Oriented SrRuO3/Pt Electrodes for Pb(Zr,Ti)O3-Based Ferroelectric Capacitors: Grain Size and Roughness Impact
- Quantitative Effects of Preferred Orientation and Impurity Phases on Ferroelectric Properties of SrBi2(Ta1-xNbx)2O9 Thin Films Measured by X-Ray Diffraction Reciprocal Space Mapping
- Effect of Buffer Layer on Epitaxial Growth of YSZ Deposited on Si Substrate by Slower Q-switched 266 nm YAG Laser
- Solution-Based Fabrication of Perovskite Nanosheet Films and Their Dielectric Properties
- Fatigue Properties of Epitaxial Pb(Zr0.35Ti0.65)O3 Films with Various Volume Fractions of 90° Domains Grown on (100)cSrRuO3/(100)SrTiO3 Substrates
- Langmuir–Blodgett Fabrication of Nanosheet-Based Dielectric Films without an Interfacial Dead Layer
- Epitaxial Growth of Ferromagnetic Iron Silicide Thin Films on Silicon with Yttria-Stabilized Zirconia Buffer Layer
- Epitaxial Pt Films with Different Orientations Grown on (100)Si Substrates by RF Magnetron Sputtering
- Site Occupancy Analysis on the Enhancement in Dy-Substituted Pb(Zr,Ti)O3 Film
- Raman Spectroscopic Characterization of Tetragonal PbZrxTi1-xO3 Thin Films: A Rapid Evaluation Method for $c$-Domain Volume