Property Improvement of 75nm-thick Directly crystallized SrBi_2Ta_2O_9 Thin Films by Pulse-introduced Metalorganic Chemical Vapor Deposition at Low Temperature : Electrical Properties of Condensed Matter
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概要
- 論文の詳細を見る
Crystallized SrBi_2Ta_2O_9 (SBT) films were deposited on (111) Ir/TiO_2/SiO_2/Si substrates at 650℃ by metalorganic chemical vapor deposition (MOCVD). Crystallized SBT films from 75 to 200nm in thickness were directly deposited, but its remanent polarization (Pr) decreased when the film thickness decreased for the film deposited by conventional continuous-MOCVD. This Pr value was increased by 50% by using the source gas pulse-introduction technique (pulse-MOCVD) at 75nm thicknesses. Moreover, the leakage current was dramatically improved to be on the order of 10^-5A/cm^2 up to 600kV/cm. This film exhibited strong (103) orientation of the crystal axis, while the continuous gas-introduced film showed a mixture of (00l) and (103) orientations.
- 社団法人応用物理学会の論文
- 2001-07-15
著者
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NUKAGA Norimasa
Department of Innovative and Engineered Materials, Interdisciplinary Graduate School, Tokyo Institut
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WATANABE Takayuki
Department of Innovative and Engineered Materials, Interdisciplinary Graduate School, Tokyo Institut
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FUNAKUBO Hiroshi
Department of Innovative and Engineered Materials, Interdisciplinary Graduate School, Tokyo Institut
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MITSUYA MASATOSHI
Department of Radiology, Tohoku University School of Medicine
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SAITO Keisuke
Application Laboratory
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Saito Keisuke
Application Laboratory Analytical Division Philips Japan Ltd.
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Saito K
Institute Of Industrial Science University Of Tokyo
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Funakubo Hiroshi
Department Of Innovative And Engineered Materials
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Watanabe Toshihide
Atr Adaptive Communications Research Laboratories:(present Address)nhk Science And Technical Researc
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Watanabe T
Department Of Innovative And Engineered Materials Interdisciplinary Graduate School Of Science And E
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Saito Kenichi
Institute Of Industrial Science University Of Tokyo
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Fujisawa Hironori
Department Of Electrical Electronic And Computer Engineering Graduate School Of Engineering Hitneji
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Watanabe T
Laboratory Of Advanced Science And Technology For Industry University Of Hyogo
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Saito Kunio
Ntt Microsystem Integration Laboratories
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Watanabe Takeo
Univ. Hyogo Hyogo Jpn
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Saito K
Akita Univ. Akita Jpn
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Mitsuya Masatoshi
Department Of Innovative And Engineered Materials
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Watanabe Takayuki
Department Of Innovative And Engineered Materials Tokyo Institute Of Technology
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Mitsuya Masatoshi
Kanagawa Industrial Technology Research Institute
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Saito Keisuke
Application Laboratory Bruker Axs
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Nukaga N
Department Of Innovative And Engineered Materials Interdisciplinary Graduate School Tokyo Institute
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Nukaga Norimasa
Department Of Innovative And Engineered Materials Interdisciplinary Graduate School Of Science And E
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Mitsuya Masatoshi
Kanagawa Industrial Technology Center
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Watanabe Takayuki
Department Of Chemical Engineering Tokyo Institute Of Technology
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Watanabe Takayuki
Department Of Biochemistry School Of Dentistry Hokkaido University
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Saito Kaichi
Kanagawa Industrial Technology Center
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Nukaga Norimasa
Department of Innovative and Engineered Materials, Interdisciplinary Graduate School, Tokyo Institute of Technology
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Watanabe Takayuki
Department of Innovative and Engineered Materials, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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Funakubo Hiroshi
Department of Innovative and Engineered Material, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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