Effect of Buffer Layer on Epitaxial Growth of YSZ Deposited on Si Substrate by Slower Q-switched 266nm YAG Laser
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-04-15
著者
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WATANABE Takayuki
Department of Innovative and Engineered Materials, Interdisciplinary Graduate School, Tokyo Institut
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FUNAKUBO Hiroshi
Department of Innovative and Engineered Materials, Interdisciplinary Graduate School, Tokyo Institut
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Funakubo H
Dep. Of Innovative And Engineered Materials Tokyo Inst. Of Technol.
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Saito Keisuke
Application Laboratory Analytical Division Philips Japan Ltd.
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Shimizu Yoshitada
Kanagawa Industrial Technology Research Institute
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KANEKO Satoru
Kanagawa Industrial Technology Research Institute
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AKIYAMA Kensuke
Kanagawa Industrial Technology Research Institute
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OHYA Seishiro
Kanagawa Industrial Technology Research Institute
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ITO Takeshi
Kanagawa Industrial Technology Research Institute
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YASAKA Shinji
Kanagawa Industrial Technology Research Institute
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MITSUHASHI Masahiko
Kanagawa Industrial Technology Research Institute
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OKAMOTO Shoji
Department of Innovative and Engineered Materials, Tokyo Institute of Technology
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SAITO Keisuke
PANalytical Japan
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Watanabe T
Department Of Innovative And Engineered Materials Interdisciplinary Graduate School Of Science And E
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Okamoto Shoji
Department Of Innovative And Engineered Materials Tokyo Institute Of Technology
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