24pYE-6 圧電応答顕微鏡でみる分域像(強誘電体分域の測定法の新展開と新しい分域像,シンポジウム,領域10,誘電体,格子欠陥,X線・粒子線,フォノン物性)

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概要

• 論文の詳細を見る
• 社団法人日本物理学会の論文
• 2008-02-29

著者

• Shimizu Masahiro

  Ulsi Development Center Mitsubishi Electric Corporation

• Funakubo H

  Dep. Of Innovative And Engineered Materials Tokyo Inst. Of Technol.

• Funakubo H

  Tokyo Inst. Technol. Yokohama Jpn

• 清水 勝

  兵庫県立大学大学院 工学研究科

• 藤沢 浩訓

  兵庫県立大学大学院 工学研究科

• 舟窪 浩

  東京工業大学大学院 総合理工学研究科 物質科学創造専攻

• Shimizu M

  Advanced Industrial Science And Technology (aist) Power Electronics Research Center

• Mitsugi Satoshi

  Precision And Intelligence Laboratory Tokyo Institute Of Technology

• Shimizu Mitsuaki

  Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology

• Shimizu M

  Tokyo Inst. Technology Yokohama

• Fujisawa Hironori

  Department Of Electrical Electronic And Computer Engineering Graduate School Of Engineering Hitneji

• Fujisawa Hironori

  Graduate School Of Engineering University Of Hyogo

• Shimizu M

  Tokyo Univ. Agriculture & Technol. Koganei

• 藤沢 浩訓

  Dep. Of Innovative And Engineered Materials Tokyo Inst. Of Technol.

関連論文

• Direct Crystallization and Characterization of Bi_3TiTaO_9 Thin Films Prepared by Metalorganic Chemical Vapor Deposition
• MOCVD法により形成したPbTiO_3自己集合島の構造制御(新型不揮発性メモリー)
• サイトエンジニアリングコンセプトを用いたBi_4Ti_3O_12基薄膜特性の設計
• a,b軸配向エピタキシャルBi_4Ti_3O_12基薄膜の合成と特性評価
• 強誘電体ナノワイヤ及びナノアイランドの自発分極に関する研究 (平成21年度研究報告)
• ナノ強誘電体の基礎物性 : 現状と将来展望
• PbTiO_3- and Pb(Zr,Ti)O_3-Covered ZnO Nanorods
• MOCVD法によるPbTiO_3ナノ島作製とその強誘電性
• 24pYE-6 圧電応答顕微鏡でみる分域像(強誘電体分域の測定法の新展開と新しい分域像,シンポジウム,領域10,誘電体,格子欠陥,X線・粒子線,フォノン物性)
• MOCVD法によるナノサイズ強誘電体の作製とその物性
• 強誘電体ナノ構造の作製とその物性
• 19aXC-4 HAADF STEM法を用いたSrTiO_3(100)/PbTiO_3強誘電体薄膜の原子構造組成解析(X線・粒子線(電子線),領域10,誘導体,格子欠陥,X線・粒子線,フォノン物性)
• 21pYN-2 強誘電体極薄膜及びナノ構造の作製とその物性(領域10シンポジウム : 強誘電体薄膜および界面における新しい現象とその応用,領域10(誘電体,格子欠陥,X線・粒子線,フォノン物性))
• MOCVD法による強誘電体ナノ構造の形成とその物性(新型不揮発性メモリ)
• 29pXH-2 自己組織化による強誘電体PbTiO_3ナノ構造の形成と構造制御(領域10シンポジウム : ナノスケール構造を利用した物質創製-材料種の枠を超えて)(領域10)
• 圧電応答顕微鏡による強誘電体薄膜の観察と評価
• 21pXC-7 圧電応答顕微鏡による強誘電体薄膜の分極反転過程の観察と評価
• MOCVD法によるPb(Zr,Ti)O_3薄膜の低温成長と特性の改善(圧電デバイス・材料,強誘電体材料,有機エレクトロニクス,一般)
• MOCVD法によるPb(Zr,Ti)O_3極薄膜のエピタキシャル成長と電気的特性(物性,成膜,加工,プロセス : 強誘電体薄膜とデバイス応用)
• MOCVD法によるPb(Zr,Ti)0_3薄膜の低温成長と特性の改善(圧電デバイス・材料,強誘電体材料,有機エレクトロニクス,一般)
• I層にMgOを用いたMIS及びMFIS構造の作製とその評価
• エピタキシャルSrBi_2Ta_2O_9薄膜の界面構造
• X線逆格子イメージング法を用いた表界面ナノ構造評価
• Impact of 90ﾟ-Domain Wall Motion in Pb(Zr_Ti_)O_3 Film on the Ferroelectricity Induced by an Applied Electric Field
• Thick Epitaxial Pb(Zr_,Ti_)O_3 Films Grown on (100)CaF_2 Substrates with Polar-Axis-Orientation
• 多次元検出器と高分解能X線回折装置を用いた薄膜材料解析
• X線回折逆格子空間マッピング法を用いた強誘電体薄膜中のドメイン構造の観察 (特集 強誘電体におけるドメインエンジニアリングの最新動向)
• Continuous Output Beam Steering in Vertical-Cavity Surface-Emitting Lasers with Two p-Type Electrodes by Controlling Injection Current Profile
• Multiferroism at Room Temperature in BiFeO_3/BiCrO_3(111) Artificial Superlattices
• 高密度強誘電体メモリ用のMOCVD合成Pb(Zr,Ti)O_3の高再現性作製のための(111)配向したSrRuO_3/Pt下部電極(非揮発性メモリ及び関連プロセス一般)
• ビスマス層状誘電体のナノレイヤー積層方向に見られる新規誘電特性
• Structural Modulation in Oxygen Deficient Epitaxial Bi_2Sr_2Ca_1Cu_2O_X Observed by X-ray Reciprocal Space Mapping
• Epitaxial Yttria-stabilized Zirconia (YSZ) Film Deposited on Si(100) Substrate by YAG Laser
• Effect of Buffer Layer on Epitaxial Growth of YSZ Deposited on Si Substrate by Slower Q-switched 266nm YAG Laser
• Bi_2Sr_2Ca_1Cu_2O_X Thin Film Deposition by Q-switched YAG Laser
• Improvement of DC Characteristics in AlGaN/GaN Heterojunction Field-Effect Transistors Employing AlN Spacer Layer
• AIN/AlGaN/GaN Metal Insulator Semiconductor Heterostructure Field Effect Transistor
• Effects of High-k Passivation Films on AlGaN/GaN HEMT
• p-type InGaN Cap Layer for Normally-off Operation in AlGaN/GaN HFETs
• High Breakdown Voltage AlGaN/GaN MIS-HEMT with TiO_2/Si_3N_4 Gate Insulator
• High Speed AlGaN/GaN MIS-HEMT with High Drain and Gate Breakdown Voltages
• GaN Crystal Growth on Sapphire Substrate Using Islandlike GaN Buffer Formed by Repetition of Thin-Layer Low-Temperature Deposition and Annealing in rf-Plasma Molecular Beam Epitaxy
• Improvement of GaN Crystal Quality in RF-MBE Using Thin Low-Temperature-Grown GaN Buffer Layers
• Gate-Length Dependence of DC Characteristics in Submicron-Gate AlGaN/GaN HEMTs
• Roles of Si Irradiation during the Growth Interruption on GaN Film Qualities in Plasma-Assisted Molecular Beam Epitaxy : Semiconductors
• Indium Roles on the GaN Surface Studied Directly by Reflection High-Energy Electron Diffraction Observations : Semiconductors
• High-Quality GaN Layers on c-Plane Sapphire Substrates by Plasma-Assisted Molecular-Beam Epitaxy Using Double-Step AlN Buffer Process
• Temperature Characteristics AlGaN/GaN Heterojunction Field Effect Transistors
• Advantages of AlN/GaN Metal Insulator Semiconductor Field Effect Transistor using Wet Chemical Etching With Hot Phosphoric Acid : Semiconductors
• Optimization of GaN Growth with Ga-Polarity by Referring to Surface Reconstruction Reflection High-Energy Electron Diffraction Patterns : Semiconductors
• High-Quality InGaN Films Grown on Ga-Polarity GaN by Plasma-Assisted Molecular-Beam Epitaxy
• AlGaN/GaN Heterojunction High Electron Mobility Transistors Using Ga-Polarity Crystal Growth by Plasma-Assisted Molecular Beam Epitaxy
• Use of Multiple Paris of Gain and Saturable Absorber Regions for Semiconductor Optical-Pulse Compressor
• Essential Change in Crystal Qualities of GaN Films by Controlling Lattice Polarity in Molecular Beam Epitaxy
• Effect of Leakage Current on Pulse-Width Characteristic in Q-Switched Two-Section AlGaAs Multiple-Quantum-Well Semiconductor Lasers
• Microstructure and Electrical Properties of (Pb, La)(Zr. Ti)O_3 Films Crystallized from Amorphous State by TWO-Step Postdeposition Annealing
• Effects of Pt/SrRuO_3 Top Electrodes on Ferroelectric Properties of Epitaxial(Pb, La)(Zr, Ti)O_3 Thin Films
• MOCVD法によるPb(Zr,Ti)0_3薄膜の低温成長と特性の改善(圧電デバイス・材料,強誘電体材料,有機エレクトロニクス,一般)
• MOCVD法によるPb(Zr,Ti)O_3薄膜の低温成長と特性の改善(圧電デバイス・材料,強誘電体材料,有機エレクトロニクス,一般)
• MOCVD法によるPb(Zr,Ti)O_3薄膜の低温成長と核付けが及ぼす効果
• Effect of La substitution on Electrical Properties of Highly Oriented Bi_4Ti_3O_ Films Prepared by Metalorganic Chemical Vapor Deposition
• Twin-Free Epitaxial Films Lateral Relation between YSZ(111) and Si(111)
• Strong Dependence on Thickness of Room-Temperature Dielectric Constant of (100)-Oriented Pb(Mg_Nb_)O_3 Epitaxial Films Grown by Metal Organic Chemical Vapor Deposition
• Preparation and Structural Analysis of Micro-patterned Pb(Zr,Ti)O_3 Film by Metalorganic Chemical Vapor Deposition
• Metalorganic Chemical Vapor Deposition of Epitaxial Perovskite SrIrO_3 Films on (100)SrTiO_3 Substrates
• Epitaxial Pt Films with Different Orientations Grown on (100)Si Substrates by RF Magnetron Sputtering
• Epitaxial Growth of (100)-Oriented β-FeSi_2 Thin Films on Insulating Substrates
• Photoluminescence Properties from β-FeSi_2 Film Epitaxially Grown on Si, YSZ and Si//YSZ
• Epitaxial Growth of β-FeSi_2 on Single Crystal Insulator
• Crystal Structure Analysis of Metalorganic Chemical Vapor Deposition-β-FeSi_2 Thin Film by X-ray Diffraction Measurement
• Thermal Stability of SrRuO_3 Bottom Electrode and Electric Property of Pb(Zr, Ti)O_3 Thin Film Deposited on SrRuO_3
• Perovskite Single-Phase Growth of Epitaxial Pb(Zn_Nb_)O_3 Films by Alternative-Source-Gas-Introduced Metalorganic Chemical Vapor Deposition
• Y_2O_3-Stabilized ZrO_2 Thin Films Prepared by Metalorganic Chemical Vapor Deposition
• Residual Strain and Crystal Structure of BaTiO_3-SrTiO_3 Thin Films Prepared by Metal Organic Chemical Vapor Deposition
• Film Thickness Dependence of Dielectric Property and Crystal Structureof PbTiO_3 Film Prepared on Pt/SiO_2/Si Substrate by Metal Organic Chemical Vapor Deposition
• Dependence of Ferroelectric Properties on Thickness of BiFeO_3 Thin Films Fabricated by Chemical Solution Deposition
• Ion Modification for Improvement of Insulating and Ferroelectric Properties of BiFeO_3 Thin Films Fabricated by Chemical Solution Deposition
• Structural and Electrical Properties of Polycrystalline Bi_Nd_xTi_3O_ Ferroelectric Thin Films with in-Plane c-Axis Orientations
• Charge-Compensative Ion Substitution of La^-Substituted Bismuth Titanate Thin Films for Enhancement of Remanent Polarization
• c軸配向ビスマス層状化合物膜の誘電特性 (特集 エレクトロニクセラミックス薄膜)
• 強誘電体薄膜におけるサイトエンジニアリングコンセプト
• 強誘電体薄膜材料における非鉛化実現の可能性
• 新材料開発 サイトエンジニアリングコンセプトに基づくBi4Ti3O12基強誘電体の設計
• 高品質SrBi_2Ta_2O_9薄膜の低温合成と配向制御
• Scalability of Gate/N^- Overlapped Lightly Doped Drain in Deep-Submicrometer Regime
• Subquarter-micrometer Dual Gate Complementary Metal Oxide Semiconductor Field Effect Transistor with Ultrathin Gate Oxide of 2 nm
• Effect of Strain in Epitaxially Grown SrRuO_3 Thin Films on Crystal Structure and Electric Properties
• High-Speed Convolution System for Real-Time Proximity Effect Correction
• Observations of Island Structures at the Initial Growth Stage of PbZr_xTi_O_3 Thin Films Prepared by Metalorganic Chemical Vapor Deposition
• Computer Simulation for Analysis of Lattice Polarity of Wurtzite GaN{0001} Film by Coaxial Impact Collision Ion Scattering Spectroscopy
• Intergration of Terraced Laser Diode and Garnet Crystals by Wafer Direct Bonding
• Pb(Zr, Ti)O_3薄膜を用いたMFIS構造における絶縁体膜の検討 : C-V 及び DLTS法による界面準位密度の測定
• Pb(Zr, Ti)O_3薄膜を用いたMFIS構造における絶縁体膜の検討 : C-V及びDLTS法による界面準位密度の測定
• MOCVD-Pb(Zr,Ti)O_3薄膜の電気的特性のグレインサイズ依存性
• MOCVD-Pb(Zr,Ti)O_3薄膜の電気的特性のグレインサイズ依存性
• Crystalline and Ferroelectric Properties of Pb(Zr, Ti)O_3 Thin Films Grown by Low-Temperature Metalorganic Chemical Vapor Deposition
• Epitaxial Growth and Ferroelectric Properties of the 20-nm-Thick Pb(Zr, Ti)O_3 Film on SrTiO_3(100) with an Atomically Flat Surface by Metalorganic Chemical Vapor Deposition
• Low-Temperature Fabrication of Ir/Pb(Zr,Ti)O_3/Ir Capacitors Solely by Metalorganic Chemical Vapor Deposition
• Analysis of GaInAsP Surfaces by Contact-Angle Measurement for Wafer Direct Bonding with Garnet Crystals
• Direct Bonding between Quaternary Compound Semiconductor and Garnet Crystals for Integrated Optical Isolator

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