High Breakdown Voltage AlGaN/GaN MIS-HEMT with TiO_2/Si_3N_4 Gate Insulator
スポンサーリンク
概要
- 論文の詳細を見る
- 2006-09-13
著者
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Shimizu Masahiro
Ulsi Development Center Mitsubishi Electric Corporation
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Inada Masaki
National Institute Of Advanced Industrial Science And Technology
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SHIMIZU Mitsuaki
National Institute of Advance Industrial Science and Technology (AIST), Power Electronics Research C
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OKUMURA Hajime
National Institute of Advance Industrial Science and Technology (AIST), Power Electronics Research C
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Shimizu M
Advanced Industrial Science And Technology (aist) Power Electronics Research Center
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Mitsugi Satoshi
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Shimizu Mitsuaki
Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology
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Shimizu M
Tokyo Inst. Technology Yokohama
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YAGI Shuichi
National Institute of Advanced Industrial Science and Technology
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OHASHI Hiromichi
National Institute of Advanced Industrial Science and Technology
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YANO Yoshiki
Tsukuba Laboratory, Taiyo Nippon Sanso Corporation
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AKUTSU Nakao
Tsukuba Laboratory, Taiyo Nippon Sanso Corporation
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Okumura Hajime
National Institute Of Advanced Industrial Science And Technology
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Okumura H
National Institute Of Advanced Industrial Science And Technology Power Electronics Research Center
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Okumura H
National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn
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Okumura H
Electrotechnical Lab. Ibaraki Jpn
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Okumura H
Neutron Scattering Laboratory Issp The University Of Tokyo
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Okumura Hajime
National Inst. Of Advanced Sci. And Technol. Ibaraki Jpn
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Shimizu M
Tokyo Univ. Agriculture & Technol. Koganei
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Akutsu Nakao
Tsukuba Laboratory Taiyo Nippon Sanso Corporation
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Okunuma H
National Institute Of Advanced Industrial Science And Technology
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Yano Yoshiki
Tsukuba Laboratory Taiyo Nippon Sanso Corporation
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