Photonic-Band-Gap Waveguides and Resonators in SOI Photonic Crystal Slabs(<Special Section>Photonic Crystals and Their Device Applications)
スポンサーリンク
概要
- 論文の詳細を見る
The design, fabrication, and measurement of photonic-band-gap (PEG) waveguides and resonators in two-dimensional photonic crystal slabs have been investigated. Although photonic crystal slabs have only partial gaps, efficient waveguides and resonators can be realized by appropriate design. As regards PEG waveguides, we show various designs for efficient single-mode waveguides in PhC slabs with SiO_2 cladding, we report group dispersion measurements of PEG waveguides in PhC slabs, and describe the successful fabrication of PEG waveguides with adiabatic connectors that enable us to couple the light from single-mode fibers efficiently to PEG waveguides. As regards PEG resonators, we show how to realize very high-Q and small volume resonators in hexagonal PhC slabs, and report the fabrication of resonant tunneling filters that consist of PEG resonators coupled with PEG waveguides. We also describe the successful fabrication of resonant tunneling mode-gap filters with adiabatic mode connectors.
- 社団法人電子情報通信学会の論文
- 2004-03-01
著者
-
Tsuchizawa Tai
Ntt Telecommunications Energy Laboratories
-
Tsuchizawa Tai
Ntt Microsystem Integration Labs.
-
WATANABE Toshifumi
NTT Microsystem Integration Labs.
-
YAMADA Koji
NTT Microsystem Integration Labs.
-
Wada Tetsuro
System Lsi Development Center Mitsubishi Electric Corporation
-
Tsuchizawa T
Ntt Telecommunications Energy Lab. Kanagawa Jpn
-
NOTOMI Masaya
NTT Basic Research Laboratories, NTT Corp.
-
SHINYA Akihiko
NTT Basic Research Laboratories, NTT Corp.
-
KURAMOCHI Eiichi
NTT Basic Research Laboratories, NTT Corp.
-
MITSUGI Satoshi
NTT Basic Research Laboratories, NTT Corp.
-
RYU Han-Youl
NTT Basic Research Laboratories, NTT Corp.
-
KAWABATA Tatsuro
NTT Basic Research Laboratories, NTT Corp.
-
SHOJI Tetsufumi
NTT Microsystem Integration Laboratories, NTT Corp.
-
Mitsugi Satoshi
Precision And Intelligence Laboratory Tokyo Institute Of Technology
-
Ryu Han-youl
Ntt Basic Research Laboratories Ntt Corp.
-
Notomi M
Ntt Basic Research Laboratories Ntt Corporation
-
Notomi Masaya
Ntt Basic Research Laboratories
-
Kuramochi Eiichi
Ntt Basic Research Laboratories Ntt Corporation
-
Kuramochi Eiichi
The Author Is With Ntt Basic Research Laboratories
-
Kawabata Tatsuro
Ntt Basic Research Laboratories Ntt Corp.
-
Shinya Akihiko
Ntt Basic Research Laboratories Ntt Corporation
-
Mitsugi S
Ntt Basic Research Laboratories Ntt Corp.
-
Watanabe T
Microsystem Integration Laboratories Ntt Corporation
-
Tsuchizawa T
Microsystem Integration Laboratories Ntt Corporation
-
Yamada K
Microsystem Integration Laboratories Ntt Corporation
-
Shoji Tetsufumi
Ntt Microsystem Integration Laboratories:(present Address)ntt West Corporation
-
Yamada Koji
NTT Microsystem Integration Laboratories, NTT Corporation
-
Tsuchizawa Tai
NTT Microsystem Integration Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
-
Watanabe Toshifumi
NTT Microsystem Integration Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
-
Yamada Koji
NTT Microsystem Integration Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
関連論文
- MOCVD法により形成したPbTiO_3自己集合島の構造制御(新型不揮発性メモリー)
- 強誘電体ナノワイヤ及びナノアイランドの自発分極に関する研究 (平成21年度研究報告)
- ナノ強誘電体の基礎物性 : 現状と将来展望
- PbTiO_3- and Pb(Zr,Ti)O_3-Covered ZnO Nanorods
- MOCVD法によるPbTiO_3ナノ島作製とその強誘電性
- 24pYE-6 圧電応答顕微鏡でみる分域像(強誘電体分域の測定法の新展開と新しい分域像,シンポジウム,領域10,誘電体,格子欠陥,X線・粒子線,フォノン物性)
- MOCVD法によるナノサイズ強誘電体の作製とその物性
- 強誘電体ナノ構造の作製とその物性
- 19aXC-4 HAADF STEM法を用いたSrTiO_3(100)/PbTiO_3強誘電体薄膜の原子構造組成解析(X線・粒子線(電子線),領域10,誘導体,格子欠陥,X線・粒子線,フォノン物性)
- 21pYN-2 強誘電体極薄膜及びナノ構造の作製とその物性(領域10シンポジウム : 強誘電体薄膜および界面における新しい現象とその応用,領域10(誘電体,格子欠陥,X線・粒子線,フォノン物性))
- MOCVD法による強誘電体ナノ構造の形成とその物性(新型不揮発性メモリ)
- 29pXH-2 自己組織化による強誘電体PbTiO_3ナノ構造の形成と構造制御(領域10シンポジウム : ナノスケール構造を利用した物質創製-材料種の枠を超えて)(領域10)
- 圧電応答顕微鏡による強誘電体薄膜の観察と評価
- 21pXC-7 圧電応答顕微鏡による強誘電体薄膜の分極反転過程の観察と評価
- MOCVD法によるPb(Zr,Ti)O_3薄膜の低温成長と特性の改善(圧電デバイス・材料,強誘電体材料,有機エレクトロニクス,一般)
- MOCVD法によるPb(Zr,Ti)O_3極薄膜のエピタキシャル成長と電気的特性(物性,成膜,加工,プロセス : 強誘電体薄膜とデバイス応用)
- MOCVD法によるPb(Zr,Ti)0_3薄膜の低温成長と特性の改善(圧電デバイス・材料,強誘電体材料,有機エレクトロニクス,一般)
- Waveguide-Integrated Si Nano-Photodiode with Surface-Plasmon Antenna and its Application to On-chip Optical Clock Distribution
- LSI On-Chip Optical Interconnection with Si Nano-Photonics
- A Study on the Design and Properties of an SiON/SiO_2 Waveguide : The Effect of the Substrate on Propagation Loss
- GaAs Photonic Crystals on SiO_2 Fabricated by Very-High-Frequency Anode-Coupled Reactive Ion Etching and Wafer Bonding
- Dephasing Processes in Self-Organized Strained InGaAs Single-Dots on (311)B-GaAs Substrate ( Quantum Dot Structures)
- LSI on-chip optical interconnection with Si nano-photonics
- Spectral responsivity of Ge pin photodiodes on silicon-on-insulator via selective epitaxial growth (光エレクトロニクス)
- Compact and polarization-independent variable optical attenuator based on a silicon wire waveguide with a carrier injection structure (Special issue: Solid state devices and materials)
- Low-loss silicon oxynitride waveguides and branches for the 850-nm-wavelength region (Special issue: Microoptics)
- Polarization splitter and rotator for polarization diversity system in silicon-based micro-photonic circuits (光エレクトロニクス)
- Photonic-Band-Gap Waveguides and Resonators in SOI Photonic Crystal Slabs(Photonic Crystals and Their Device Applications)
- Microphotonics Devices Based on Silicon Wire Waveguiding System(Photonic Crystals and Their Device Applications)
- Si-Based Photonic Crystals and Photonic-Bandgap Waveguides(Special Issue on Recent Progress of Integrated Photonic Devices)
- A Single-Chip MPEG-2 422P@ML Video, Audio, and System Encoder with a 162MHz Media-processor Core and Dual Motion Estimation Cores
- Multiferroism at Room Temperature in BiFeO_3/BiCrO_3(111) Artificial Superlattices
- Physical Design Methodology for On-Chip 64-Mb DRAM MPEG-2 Encoding with a Multimedia Processor(Special Issue on High-Performance and Low-Power Microprocessors)
- An Embedded Software Scheme for a Real-Time Single-Chip MPEG-2 Encoder System with a VLIW Media Processor Core (Special Issue on Low-Power High-Performance VLSI Processors and Technologies)
- Fast optical power stabilization using a germanium photodiode and a silicon variable optical attenuator integrated on a silicon photonic platform (レーザ・量子エレクトロニクス)
- Fast optical power stabilization using a germanium photodiode and a silicon variable optical attenuator integrated on a silicon photonic platform (光エレクトロニクス)
- Fast optical power stabilization using a germanium photodiode and a silicon variable optical attenuator integrated on a silicon photonic platform (フォトニックネットワーク)
- Improvement of DC Characteristics in AlGaN/GaN Heterojunction Field-Effect Transistors Employing AlN Spacer Layer
- AIN/AlGaN/GaN Metal Insulator Semiconductor Heterostructure Field Effect Transistor
- Effects of High-k Passivation Films on AlGaN/GaN HEMT
- p-type InGaN Cap Layer for Normally-off Operation in AlGaN/GaN HFETs
- High Breakdown Voltage AlGaN/GaN MIS-HEMT with TiO_2/Si_3N_4 Gate Insulator
- High Speed AlGaN/GaN MIS-HEMT with High Drain and Gate Breakdown Voltages
- GaN Crystal Growth on Sapphire Substrate Using Islandlike GaN Buffer Formed by Repetition of Thin-Layer Low-Temperature Deposition and Annealing in rf-Plasma Molecular Beam Epitaxy
- Improvement of GaN Crystal Quality in RF-MBE Using Thin Low-Temperature-Grown GaN Buffer Layers
- Gate-Length Dependence of DC Characteristics in Submicron-Gate AlGaN/GaN HEMTs
- Roles of Si Irradiation during the Growth Interruption on GaN Film Qualities in Plasma-Assisted Molecular Beam Epitaxy : Semiconductors
- Indium Roles on the GaN Surface Studied Directly by Reflection High-Energy Electron Diffraction Observations : Semiconductors
- High-Quality GaN Layers on c-Plane Sapphire Substrates by Plasma-Assisted Molecular-Beam Epitaxy Using Double-Step AlN Buffer Process
- Temperature Characteristics AlGaN/GaN Heterojunction Field Effect Transistors
- Advantages of AlN/GaN Metal Insulator Semiconductor Field Effect Transistor using Wet Chemical Etching With Hot Phosphoric Acid : Semiconductors
- Correlation Length Measurement of Sidewall Roughness of Dry Etched Facet and Its Effect on Reflectivity
- GaInAs/GaAs Micro-Arc Ring Semiconductor Laser
- Design and Lasing Operation of Micro-Arc-Ring Lasers
- A Method of Polarization Stabilization in Surface Emitting Lasers
- Microstructure and Electrical Properties of (Pb, La)(Zr. Ti)O_3 Films Crystallized from Amorphous State by TWO-Step Postdeposition Annealing
- MOCVD法によるPb(Zr,Ti)0_3薄膜の低温成長と特性の改善(圧電デバイス・材料,強誘電体材料,有機エレクトロニクス,一般)
- MOCVD法によるPb(Zr,Ti)O_3薄膜の低温成長と特性の改善(圧電デバイス・材料,強誘電体材料,有機エレクトロニクス,一般)
- MOCVD法によるPb(Zr,Ti)O_3薄膜の低温成長と核付けが及ぼす効果
- Effect of Post-Growth Annealing on Morphology of Ge Mesa Selectively Grown on Si
- Thermal Stability of SrRuO_3 Bottom Electrode and Electric Property of Pb(Zr, Ti)O_3 Thin Film Deposited on SrRuO_3
- Neutral Stream Extraction from Electron Cyclotron Resonance Plasma by Using Parallel Magnetic Field
- Generation of Electron Cyclotron Resonance Neutral Stream and Its Application to Si Etching
- Electron Cyclotron Resonance Plasma Etching of α-Ta for X-Ray Mask Absorber Using Chlorine and Fluoride Gas Mixture
- Etching Characteristics of α-Type Ta Film Using Cl_2 Electron Cyclotron Resonance(ECR)Plasma
- Development of Highly Accurate X-Ray Mask with High-Density Patterns
- LSI On-Chip Optical Interconnection with Si Nano-Photonics
- 圧電応答顕微鏡による強誘電体Pb(Zr,Ti)O_3薄膜の分極反転過程の観察(半導体エレクトロニクス)
- Effect of Strain in Epitaxially Grown SrRuO_3 Thin Films on Crystal Structure and Electric Properties
- Microoptical Two-Dimensional Devices for the Optical Memory Head of an Ultrahigh Data Transfer Rate and Density Sytem Using a Vertical Cavity Surface Emitting Laser (VCSEL) Array
- Fabrication of Micro-Pyramidal Probe Array with Aperture for Near-Field Optical Memory Applications
- Evaluation of EMI Reduction Effect of Guard Traces Based on Imbalance Difference Model
- Increase of Common-Mode Radiation due to Guard Trace Voltage and Determination of Effective Via-Location
- A Prediction Method of Common-Mode Excitation on a Printed Circuit Board Having a Signal Trace near the Ground Edge(Electromagnetic Compatibility (EMC))
- Numerical Simulation of Readout Using Optical Feedback in the Integrated Vertical Cavity Surface Emithing Laser Microprobe Head
- Development of time-to-digital converter IC for laser radar
- A CMOS Time-to-Digital Converter LSI with Half-Nanosecond Resolution Using a Ring Gate Delay Line (Special Issue on ASICs for Automotive Electronics)
- Common-Mode-Current Generation Caused by Difference of Unbalance of Transmission Lines on a Printed Circuit Board with Narrow Ground Pattern(Special Issue on Recent Progress in Electromagnetic Compatibility Technology)
- Prediction of Far-Field EMI Spectrum of Differential Mode Emission from a Digital PCB by Near-Field Measurement
- Intergration of Terraced Laser Diode and Garnet Crystals by Wafer Direct Bonding
- An Objective Measure Based on an Auditory Model for Assessing Low-Rate Coded Speech
- Crystalline and Ferroelectric Properties of Pb(Zr, Ti)O_3 Thin Films Grown by Low-Temperature Metalorganic Chemical Vapor Deposition
- Epitaxial Growth and Ferroelectric Properties of the 20-nm-Thick Pb(Zr, Ti)O_3 Film on SrTiO_3(100) with an Atomically Flat Surface by Metalorganic Chemical Vapor Deposition
- Low-Temperature Fabrication of Ir/Pb(Zr,Ti)O_3/Ir Capacitors Solely by Metalorganic Chemical Vapor Deposition
- Organic Photonic Crystal Band Edge Laser Fabricated by Direct Nanoprinting
- Suppression of Guard-Trace Resonance by Matched Termination for Reducing Common-Mode Radiation
- Calculation of Common-Mode Radiation from Single-Channel Differential Signaling System Using Imbalance Difference Model
- Organic Photonic Crystal Band Edge Laser Fabricated by Direct Nanoprinting
- All-Optical Switching and Control of Silicon Photonic Crystal Nanocavities
- Monolithic Integration of a Silica-Based Arrayed Waveguide Grating Filter and Silicon Variable Optical Attenuators Based on p--i--n Carrier-Injection Structure
- Fast Optical Power Stabilization using a Germanium Photodiode and a Silicon Variable Optical Attenuator Integrated on a Silicon Photonic Platform
- Fast optical power stabilization using a germanium photodiode and a silicon variable optical attenuator integrated on a silicon photonic platform (レーザ・量子エレクトロニクス)
- Fast optical power stabilization using a germanium photodiode and a silicon variable optical attenuator integrated on a silicon photonic platform (光エレクトロニクス)
- Fast optical power stabilization using a germanium photodiode and a silicon variable optical attenuator integrated on a silicon photonic platform (フォトニックネットワーク)
- Low-loss Silicon Oxynitride Waveguides and Branches for the 850-nm-Wavelength Region
- Compact and Polarization-Independent Variable Optical Attenuator Based on a Silicon Wire Waveguide with a Carrier Injection Structure
- Phase Demodulation of DPSK Signals Using Dual-Bus Coupled Silicon Micro-Ring Resonator
- Integration of Silicon Nano-Photonic Devices for Telecommunications
- Pit Distribution Design for Computer-Generated Waveguide Holography
- Electron Cyclotron Resonance Plasma Etching of $\alpha$-Ta for X-Ray Mask Absorber Using Chlorine and Fluoride Gas Mixture