Compact and Polarization-Independent Variable Optical Attenuator Based on a Silicon Wire Waveguide with a Carrier Injection Structure
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概要
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We developed a Si variable optical attenuator (VOA) with low-polarization-dependent loss (PDL). We designed the core dimensions to reduce PDL originating from free-carrier absorption. In the core dimensions, there is a big margin for which the PDL is less than 1 dB when attenuation is $-20$ dB. On the basis of calculations, we fabricated the Si VOAs and evaluated them. A fabricated Si VOA exhibited PDL of 0.2 dB due to free-carrier absorption when the attenuation was $-20$ dB. Moreover, we verified that the PDL is less than 1 dB in a wide range of core widths, it is tolerant to fabrication error.
- 2010-04-25
著者
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WATANABE Toshifumi
NTT Microsystem Integration Labs.
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NISHI Hidetaka
NTT Microsystem Integration Laboratories
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Sei-ichi Itabashi
NTT Microsystem Integration Laboratories, NTT corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Tsuchizawa Tai
NTT Microsystem Integration Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Tai Tsuchizawa
NTT Microsystem Integration Laboratories, NTT corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Hiroyuki Shinojima
NTT Microsystem Integration Laboratories, NTT corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Koji Yamada
NTT Microsystem Integration Laboratories, NTT corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Watanabe Toshifumi
NTT Microsystem Integration Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Hidetaka Nishi
NTT Microsystem Integration Laboratories, NTT corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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