Effect of Post-Growth Annealing on Morphology of Ge Mesa Selectively Grown on Si

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概要

• 論文の詳細を見る
• 2008-02-01

著者

• Tsuchizawa Tai

  Ntt Telecommunications Energy Laboratories

• Tsuchizawa Tai

  Ntt Microsystem Integration Labs.

• Ishikawa Yasuhiko

  Department Of Materials Engineering Graduate School Of Engineering The University Of Tokyo

• WATANABE Toshifumi

  NTT Microsystem Integration Labs.

• YAMADA Koji

  NTT Microsystem Integration Labs.

• Wada Tetsuro

  System Lsi Development Center Mitsubishi Electric Corporation

• Tsuchizawa T

  Ntt Telecommunications Energy Lab. Kanagawa Jpn

• PARK Sungbong

  Department of Materials Engineering, Graduate School of Engineering The University of Tokyo

• WADA Kazumi

  Department of Materials Engineering, Graduate School of Engineering The University of Tokyo

• ITABASHI Sei-ichi

  NTT Microsystem Integration Laboratories

• ISHIKAWA Yasuhiko

  NTT Microsystem Integration Laboratory, NTT Corporation

• Wada Kazumi

  Department Of Materials Engineering Graduate School Of Engineering The University Of Tokyo

• Park Sungbong

  Department Of Materials Engineering Graduate School Of Engineering The University Of Tokyo

• Watanabe T

  Microsystem Integration Laboratories Ntt Corporation

• Tsuchizawa T

  Microsystem Integration Laboratories Ntt Corporation

• Yamada K

  Microsystem Integration Laboratories Ntt Corporation

• Itabashi Sei-ichi

  Microsystem Integration Laboratories Ntt Corporation

• Yamada Koji

  NTT Microsystem Integration Laboratories, NTT Corporation

• Tsuchizawa Tai

  NTT Microsystem Integration Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan

• Watanabe Toshifumi

  NTT Microsystem Integration Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan

• Yamada Koji

  NTT Microsystem Integration Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan

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