Ishikawa Yasuhiko | Department Of Materials Engineering Graduate School Of Engineering The University Of Tokyo
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概要
- Ishikawa Yasuhikoの詳細を見る
- 同名の論文著者
- Department Of Materials Engineering Graduate School Of Engineering The University Of Tokyoの論文著者
関連著者
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Ishikawa Yasuhiko
Department Of Materials Engineering Graduate School Of Engineering The University Of Tokyo
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Wada Kazumi
Department Of Materials Engineering Graduate School Of Engineering The University Of Tokyo
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Park Sungbong
Department Of Materials Engineering Graduate School Of Engineering The University Of Tokyo
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WADA Kazumi
Department of Materials Engineering, Graduate School of Engineering The University of Tokyo
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Tsuchizawa Tai
Ntt Telecommunications Energy Laboratories
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Tsuchizawa Tai
Ntt Microsystem Integration Labs.
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Wada Tetsuro
System Lsi Development Center Mitsubishi Electric Corporation
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Tsuchizawa T
Ntt Telecommunications Energy Lab. Kanagawa Jpn
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PARK Sungbong
Department of Materials Engineering, Graduate School of Engineering The University of Tokyo
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Watanabe T
Microsystem Integration Laboratories Ntt Corporation
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Tsuchizawa T
Microsystem Integration Laboratories Ntt Corporation
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Yamada K
Microsystem Integration Laboratories Ntt Corporation
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Itabashi Sei-ichi
Microsystem Integration Laboratories Ntt Corporation
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Osaka Jiro
Department Of Materials Engineering Graduate School Of Engineering The University Of Tokyo
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TAKITA Shinya
Department of Materials Engineering, Graduate School of Engineering The University of Tokyo
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OSAKA Jiro
Department of Materials Engineering, Graduate School of Engineering The University of Tokyo
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Takita Shinya
Department Of Materials Engineering Graduate School Of Engineering The University Of Tokyo
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Takita Shinya
Department Of Applied Chemistry Faculty Of Engineering Kumamoto University
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SHINOJIMA Hiroyuki
Microsystem Integration Laboratories, NTT Corporation
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Nishi Hidetaka
Ntt Microsystem Integration Laboratories Ntt Corporation
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Park Sungbong
Microsystem Integration Laboratories Ntt Corporation
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YAMADA Koji
Microsystem Integration Laboratories, NTT Corporation
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TSUCHIZAWA Tai
Microsystem Integration Laboratories, NTT Corporation
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WATANABE Toshifumi
Microsystem Integration Laboratories, NTT Corporation
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KOU Rai
Microsystem Integration Laboratories, NTT Corporation
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ITABASHI Sei-ichi
Microsystem Integration Laboratories, NTT Corporation
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Nishi Hidetaka
Microsystem Integration Laboratories Ntt Corporation
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Kou Rai
Microsystem Integration Laboratories Ntt Corporation
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Shinojima Hiroyuki
Microsystem Integration Laboratories Ntt Corporation
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WATANABE Toshifumi
NTT Microsystem Integration Labs.
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YAMADA Koji
NTT Microsystem Integration Labs.
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Yamada Koji
NTT Microsystem Integration Laboratories, NTT Corporation
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Tsuchizawa Tai
NTT Microsystem Integration Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Watanabe Toshifumi
NTT Microsystem Integration Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Kazumi Wada
Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
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Yamada Koji
NTT Microsystem Integration Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Ishikawa Yasuhiko
Department Of Materials Engineering The University Of Tokyo
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ITABASHI Seiichi
NTT Microsystem Integration Labs.
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KOBAYASHI Yosuke
Department of Electrical Engineering, Tokai University graduate school
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ITABASHI Sei-ichi
NTT Microsystem Integration Laboratories
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Lin Shiyun
Department of Materials Engineering, The University of Tokyo
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ISHIKAWA Yasuhiko
NTT Microsystem Integration Laboratory, NTT Corporation
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Takada Yoichi
Department Of Chemistry Rikkyo University
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Lin Shiyun
Department Of Materials Engineering The University Of Tokyo
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NISHI Hidetaka
Microsystem Integration Laboratories, NTT Corporation
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Kobayashi Yosuke
Department Of Animal Physiology Graduate School Of Agricultural Science Tohoku University
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Kobayashi Yosuke
Department Of Materials Engineering The University Of Tokyo
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Itabashi Seiichi
NTT Microsystem Integration Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Jiro Osaka
Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
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Park Sungbong
Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
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Tsusaka Yoshiyuki
Graduate School and Faculty of Science, Himeji Institute of Technology, 3-2-1 Kouto, Kamigori, Ako, Hyogo 678-1297, Japan
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Matsui Junji
Hyogo Prefectural Center for Advanced Science and Technology, 3-1-1 Kouto, Kamigori, Hyogo 678-1205, Japan
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Wada Kazumi
Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
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Yanai Akihiro
Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
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Ichikawa Ryuzo
Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
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Yoichi Takada
Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
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Akihiro Yanai
Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
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Kobayashi Yosuke
Department of Allergy and Respiratory Medicine, The Fraternity Memorial Hospital, Japan
著作論文
- Reverse current reduction of Ge pin photodiodes on Si without post-growth annealing (フォトニックネットワーク)
- Reverse current reduction of Ge pin photodiodes on Si without post-growth annealing
- Reverse current reduction of Ge pin photodiodes on Si without post-growth annealing (光エレクトロニクス)
- Reverse current reduction of Ge pin photodiodes on Si without post-growth annealing (レーザ・量子エレクトロニクス)
- Strain and absorption coefficient of finite Ge structures on Si
- Spectral responsivity of Ge pin photodiodes on silicon-on-insulator via selective epitaxial growth (光エレクトロニクス)
- PL evaluation of Si ring resonators (光エレクトロニクス)
- Effect of Post-Growth Annealing on Morphology of Ge Mesa Selectively Grown on Si
- Fast Optical Power Stabilization using a Germanium Photodiode and a Silicon Variable Optical Attenuator Integrated on a Silicon Photonic Platform
- Fast optical power stabilization using a germanium photodiode and a silicon variable optical attenuator integrated on a silicon photonic platform (レーザ・量子エレクトロニクス)
- Fast optical power stabilization using a germanium photodiode and a silicon variable optical attenuator integrated on a silicon photonic platform (光エレクトロニクス)
- Fast optical power stabilization using a germanium photodiode and a silicon variable optical attenuator integrated on a silicon photonic platform (フォトニックネットワーク)
- Effect of Mesa Shape on Threading Dislocation Density in Ge Epitaxial Layers on Si after Post-Growth Annealing
- Strain and Absorption Coefficient of Finite Ge Structures on Si
- A New Approach Using Backside Scatterers for Efficiency Enhancement in Thin Si Solar Cells