Wada Kazumi | Department Of Materials Engineering Graduate School Of Engineering The University Of Tokyo

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概要

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著作論文

Reverse current reduction of Ge pin photodiodes on Si without post-growth annealing (フォトニックネットワーク)
Reverse current reduction of Ge pin photodiodes on Si without post-growth annealing
Reverse current reduction of Ge pin photodiodes on Si without post-growth annealing (光エレクトロニクス)
Reverse current reduction of Ge pin photodiodes on Si without post-growth annealing (レーザ・量子エレクトロニクス)
Spectral responsivity of Ge pin photodiodes on silicon-on-insulator via selective epitaxial growth (光エレクトロニクス)
PL evaluation of Si ring resonators (光エレクトロニクス)
Self-Diffusion in Extrinsic Silicon Using Isotopically Enriched ^Si Layer : Semiconductors
Epitaxial Growth of Pure ^Si Layers on a Natural Si(100) Substrate Using Enriched ^SiH_4
Effect of Post-Growth Annealing on Morphology of Ge Mesa Selectively Grown on Si
Comparison of Optical Properties of GaN/AlGaN and InGaN/AlGaN Single Quantum Wells
Concentric-ring resonator optical buffers (光エレクトロニクス)
Fast Optical Power Stabilization using a Germanium Photodiode and a Silicon Variable Optical Attenuator Integrated on a Silicon Photonic Platform
Fast optical power stabilization using a germanium photodiode and a silicon variable optical attenuator integrated on a silicon photonic platform (レーザ・量子エレクトロニクス)
Fast optical power stabilization using a germanium photodiode and a silicon variable optical attenuator integrated on a silicon photonic platform (光エレクトロニクス)
Fast optical power stabilization using a germanium photodiode and a silicon variable optical attenuator integrated on a silicon photonic platform (フォトニックネットワーク)
Self-Diffusion in Intrinsic and Extrinsic Silicon Using Isotopically Pure 30Silicon/Natural Silicon Heterostructures
Strain and Absorption Coefficient of Finite Ge Structures on Si

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