Self-Diffusion in Intrinsic and Extrinsic Silicon Using Isotopically Pure 30Silicon/Natural Silicon Heterostructures
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概要
- 論文の詳細を見る
Silicon self-diffusion coefficients were measured in intrinsic and extrinsic silicon from 870 to 1070°C using isotopically pure 30Si/natural Si heterostructures. 30Si diffusion profiles are determined by secondary ion mass spectrometry. The temperature dependence of intrinsic diffusion coefficient in bulk Si is obtained. Comparing it in heavily As- or B-doped Si, it is found that the fractional contribution of Si self-diffusion varies with diffusion temperatures and that different type of point defect (self-interstitial or vacancy) is supersaturated by the Fermi level effect in As- or B-doped silicon.
- 2003-06-15
著者
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Matsumoto Satoru
Department of Cardiology, Toyonaka Municipal Hospital
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Abe Takao
Isobe R&d Center Shin-etsu Handotai
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NAKABAYASHI Yukio
Department of Electronics and Electrical Engineering, Keio University
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OSMAN Hirman
Department of Electronics and Electrical Engineering, Keio University
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TOYONAGA Kazunari
Department of Electronics and Electrical Engineering, Keio University
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Wada Kazumi
Department Of Materials Engineering Graduate School Of Engineering The University Of Tokyo
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Yokota Kaori
Department Of Electronics And Electrical Engineering Keio University
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Murota Junichi
Research Institute For Electrical Communications Tohoku University
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Murota Junichi
Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba, Sendai 980-8577, Japan
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Yokota Kaori
Department of Electronics and Electrical Engineering, Keio University, 3-14-1 Hiyoshi, Kohoku, Yokohama 223-8522, Japan
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Toyonaga Kazunari
Department of Electronics and Electrical Engineering, Keio University, 3-14-1 Hiyoshi, Kohoku, Yokohama 223-8522, Japan
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Osman Hirman
Department of Electronics and Electrical Engineering, Keio University, 3-14-1 Hiyoshi, Kohoku, Yokohama 223-8522, Japan
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Wada Kazumi
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, U.S.A.
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Abe Takao
Isobe R&D Center, Shin-Etsu Handotai, 2-13-1 Isobe, Annaka, Gunma 397-0127, Japan
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