Cathodoluminescence Investigation of Relaxed Si1-xGex Layer and Composition-Graded SiGe Layer
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概要
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Strained Si grown on relaxed Si1-xGex and a stair like composition-graded Si1-xGex layer with Ge composition $x$ of 0.15, 0.20, and 0.25 was investigated in detail as a function of annealing temperature by cathodoluminescence (CL) spectroscopy and atomic force microscopy. The D1 and D2 lines in CL spectra did not show a photon energy shift within the above Ge compositions. On the other hand, the D2 line showed a photon energy shift with the acceleration voltage, i.e., the depth from the surface, indicating the dependence of D2 line luminescence on the Ge compositions. The D1/D2 intensity ratio varied with the depth and it suggested that the amount ratio of dislocation type causing D1 and D2 changed with the depth. The D1/D2 intensity ratio increased significantly at the annealing temperature of 1000 °C in the composition-graded Si1-xGex layer. Strained Si surface roughness became maximum at 800 °C and then came down owing to strain relaxation. The annealing process at these temperatures causes strain relaxation due to generation and modification of dislocations in each layer.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-04-15
著者
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Matsumoto Satoru
Department of Cardiology, Toyonaka Municipal Hospital
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Matsumoto Satoru
Department of Electronics and Electrical Engineering, Keio University, 1-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522, Japan
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Sumitomo Takamichi
Department of Electronics and Electrical Engineering, Keio University, 1-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522, Japan
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Kita Haruki
Department of Electronics and Electrical Engineering, Keio University, 1-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522, Japan
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