Deep Level Induced by Thermal Oxidation in CZ n-Type Silicon : Semiconductors and Semiconductor Devices
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概要
- 論文の詳細を見る
A characteristic deep level (E4 trap) is observed only by high-temperature thermal oxidation of CZ silicon and cannot be detected in nitrogen ambient annealing. The E4 trap concentration depends on the position in the wafer. Depth profiles of the E4 trap concentrations vary remarkably with the cooling time. These facts suggest that the E4 deep level originates in the silicon self-interstitial related to the grown-in defects.
- 社団法人応用物理学会の論文
- 1988-10-20
著者
-
Matsumoto Satoru
Department of Cardiology, Toyonaka Municipal Hospital
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Hasegawa Takehiro
Department Of Electrical Engineering Keio University
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