Optical Measurement of the Melt Depth During Pulsed Laser Irradiation
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概要
- 論文の詳細を見る
We propose a method of noncontact, nondestructive, and in situ evaluation of surface melting characteristics of semiconductors during pulsed laser irradiation. By regarding the melted layer caused by pulsed laser irradiation as thin films for optics, melting characteristics can be evaluated from time-resolved reflectivity measurements. We measure the surface melting characteristics of single crystal silicon caused by ArF excimer laser irradiation using this technique. From this experiment, it is found that maximum melt depth does not vary linearly with the incident energy density around the melting threshold.
- 社団法人応用物理学会の論文
- 1989-09-20
著者
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Matsumoto Satoru
Department of Cardiology, Toyonaka Municipal Hospital
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Nagahori Takeshi
Department Of Electrical Engineering Keio University:(present Address) Opto-electronics Research Lab
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