Surface Passivation of In_<0.52>Al_<0.48>AS Using (NH_4)_2S_x and P_2S_5/(NH_4)_2S

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1994-03-15

著者

• Matsumoto Satoru

  Department of Cardiology, Toyonaka Municipal Hospital

• Matsumoto S

  Department Of Electrical Engineering Faculty Of Science And Technology Keio University

• Totsuka Masahiro

  Department Of Electrical Engineering Faculty Of Science And Technology Keio University

• YOSHIDA Nobuhide

  Department of Electrical Engineering, Faculty of Science and Technology, Keio University

• INO Junsuke

  Department of Electrical Engineering, Faculty of Science and Technology, Keio University

• Ino Junsuke

  Department Of Electrical Engineering Faculty Of Science And Technology Keio University

• Yoshida Nobuhide

  Department Of Electrical Engineering Faculty Of Science And Technology Keio University:(present Addr

関連論文

• Contribution of Adiponectin Gene Mutation to Coronary Artery Disease
• Association of Hypo-Adiponectinemia with Coronary Artery Disease in Women
• A Novel Plasma Protein Abundantly Expressed in Visceral Fat, Visfatin, Associated with Coronary Artery Disease
• Evaluation of FcεRI-binding serum IgE in patients with ocular allergic diseases
• Self-Diffusion in Intrinsic and Extrinsic Silicon Using Isotopically Pure ^Silicon/Natural Silicon Heterostructures
• Self-Diffusion in Extrinsic Silicon Using Isotopically Enriched ^Si Layer : Semiconductors
• Epitaxial Growth of Pure ^Si Layers on a Natural Si(100) Substrate Using Enriched ^SiH_4
• The Distribution of the Excess Vacancies in the Bulk at the Diffusion of Phosphorus into Silicon
• Phosphorus Diffusion in Silicon Free from the Surface Effect under Extrinie Conditions
• The Confirmation of the Surface Effect upon Phosphorus Diffusion into Silicon
• Determination of Diffusion Coefficient of Phosphorus in Silicon by Boltzmann-Matano's Method
• Phosphorus Diffusion from Doped Polysilicon through Ultra-Thin SiO_2 Films into Si Substrates
• Time and Temperature Dependence of Density of Oxidation-Induced Stacking Faults in Diamond-Lapped Silicon
• Chemical Vapor Deposition of Cu Film on SiO_2 Using Cyclopentadienylcoppertriethylphosphine
• Anitimony Diffusion into Sillicon by the Doped Oxide Method
• Phosphorus Diffusion into Silicon under the Condition of Controlled Surface Concentration
• Electrical Conductivity of p-Type CdCr_2Se_4 Single Crystals
• Electrical Properties of Amorphous Semiconductor Ge_xS_
• The Effect of Thermal Oxidation of Silicon on Boron Diffusion in Extrinsic Conditions
• Concentration Dependence of the Diffusion Coefficient of Boron in Silicon
• Evaluation of the Scattering Factor in Amorphous Ge_xTe_
• Surface Passivation of In_Al_AS Using (NH_4)_2S_x and P_2S_5/(NH_4)_2S
• EL2 Out-Diffusion in Thermally Annealed Liquid-Encapsulated Czochralski GaAs
• Two-Dimensional Analysis of Thermal Oxidation of Silicon
• Deep Level Induced by Thermal Oxidation in CZ n-Type Silicon : Semiconductors and Semiconductor Devices
• Shallow Doping of Boron into Silicon by Excimer Laser Irradiation : Beam Induced Physics and Chemistry
• Solutions of Simultaneous Equations for Oxidation Enhanced and Retarded Diffusions and Oxidation Stacking Fault in Silicon
• Excimer Laser Doping of Boron into Silicon from Photodeposited Boron Films : Beam Induced Physics and Chemistry
• Optical Measurement of the Melt Depth During Pulsed Laser Irradiation
• Self-Diffusion in Intrinsic and Extrinsic Silicon Using Isotopically Pure 30Silicon/Natural Silicon Heterostructures
• Cathodoluminescence Investigation of Relaxed Si1-xGex Layer and Composition-Graded SiGe Layer
• Surface Modification of Porous Silica with the Liquid Phase Deposition Process Using Solid Materials for Fluorine Scavenger
• Effect of Dopant Concentration on Oxidation-Induced Stacking Faults in Boron-Doped CZ Silicon : Semiconductors and Semiconductor Devices
• Present Status of the Reconstructed Large Mass Spectroscope
• Characteristics of Ohmic Contacts to n-Type Boron Phosphide
• Role of Electron Traps on the Thermal Conversion and Its Suppression for Liquid-Encapsulated Czochralski GaAs Single Crystals
• Precise Mass Calibration Method for Mass Spectrograph I.General Mass Center Method
• Crystal Structures of Stacked Ionic Assemblies of Tetracationic and Tetraanionic Porphyrins

もっと見る 閉じる

スポンサーリンク