Role of Electron Traps on the Thermal Conversion and Its Suppression for Liquid-Encapsulated Czochralski GaAs Single Crystals
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概要
- 論文の詳細を見る
Concentration depth profiles of both carrier and electron traps shallower than EL2 are investigated for undoped liquid-encapsulated Czochralski GaAs single crystals after annealing in vacuum and ambient arsenic vapor pressure with As metal powders. Thermal conversion near the surface of semi-insulating GaAs annealed in vacuum at 900°C is suppressed by annealing with ambient arsenic pressure of 100 Torr. The carrier concentration depth profile of thermally converted GaAs, which is an initially semi-insulating substrate, depends not only on the concentration change of EL2 but also on that of native shallow acceptors and deep donors shallower than EL2.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1989-10-20
著者
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Matsumoto Satoru
Department of Cardiology, Toyonaka Municipal Hospital
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Chichibu Shigefusa
Department Of Electrical Engineering Keio University
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Chichibu Shigefusa
Department of Electrical Engineering, Faculty of Science & Technology, Keio University, 14-1, 3 Chome, Hiyoshi, Kohokuku, Yokohama 223
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Ohkubo Norio
Department of Electrical Engineering, Faculty of Science & Technology, Keio University, 14-1, 3 Chome, Hiyoshi, Kohokuku, Yokohama 223
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