EL2 Out-Diffusion in Thermally Annealed Liquid-Encapsulated Czochralski GaAs
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概要
- 論文の詳細を見る
The annealing behavior of the native defect EL2 in GaAs grown by the liquid-encapsulated Czochralski (LEC) method has been investigated by means of deep-level transient spectroscopy (DLTS). After annealing in vacuum, the EL2 out-diffusion profiles were strongly dependent on the annealing temperature and time. Applying the three-step model for EL2 out-diffusion, the activation energy of the diffusion for an arsenic vacancy (V_<As>) was estimated to be about 3-4 eV.
- 社団法人応用物理学会の論文
- 1993-11-15
著者
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Matsumoto Satoru
Department of Cardiology, Toyonaka Municipal Hospital
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CHICHIBU Shigefusa
Institute of Applied Physics, University of Tsukuba
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CHICHIBU Shigefusa
Department of Electrical Engineering, Faculty of Science and Technology, Keio University
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Chichibu S
Institute Of Applied Physics University Of Tsukuba
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Chichibu S
Institute Of Applied Physics And Graduate School Of Pure And Applied Sciences University Of Tsukuba
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Chichibu Shigefusa
Department Of Electrical Engineering Keio University
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OGATA Junzo
Department of Electrical Engineering, Faculty of Science & Technology, Keio University
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IWAI Akiyoshi
Department of Electrical Engineering, Faculty of Science & Technology, Keio University
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Ogata Junzo
Department Of Electrical Engineering Faculty Of Science & Technology Keio University:(present Ad
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Iwai Akiyoshi
Department Of Electrical Engineering Faculty Of Science & Technology Keio University
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