Effect of Dopant Concentration on Oxidation-Induced Stacking Faults in Boron-Doped CZ Silicon : Semiconductors and Semiconductor Devices
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概要
- 論文の詳細を見る
The length of oxidation-induced stacking faults strongly depends on the boron concentration in extrinsic conditions at the oxidation temperature. This behavior can be interpreted by the generation of silicon self-interstitials by the Fermi level effect attributed to the heavy boron doping.
- 社団法人応用物理学会の論文
- 1988-08-20
著者
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Matsumoto Satoru
Department of Cardiology, Toyonaka Municipal Hospital
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Chichibu Shigefusa
Department Of Electrical Engineering Keio University
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HARADA Tsuyoshi
Department of Applied Chemistry and Chemical Engineering, Yamaguchi University
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MATSUMOTO Satoru
Department of Electrical Engineering, Keio University
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CHICHIBU Shigefusa
Department of Electrical Engineering, Keio University
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HARADA Tsuyoshi
Department of Electrical Engineering, Keio University
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