Two-Dimensional Analysis of Thermal Oxidation of Silicon
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概要
- 論文の詳細を見る
Step-shaped (110) oriented silicon wafers are oxidized in dry O_2 (900-1150℃) and the cross sectional views of oxide are observed by scanning electron microscopy. At lower temperature (900-950℃), the oxide thickness at te edge the reduced compared to the other regions, but the reduction cannot be observed at higher temperatures (1000-1150℃).
- 社団法人応用物理学会の論文
- 1983-08-20
著者
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Matsumoto Satoru
Department of Cardiology, Toyonaka Municipal Hospital
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OHNO Tsuneo
Department of Neurosurgery, Kanto-Rosai Hospital
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Ohno Tsuneo
Department Of Electrical Engineering Keio University
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SAKINA Yasuharu
Department of Electrical Engineering, Keio University
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Sakina Yasuharu
Department Of Electrical Engineering Keio University
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