COP-Free Silicon Surfaces by Rapid Thermal Annealing (RTA) in a H_2/Ar Mixture Ambient Using High Growth Rate Crystals

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概要

• 論文の詳細を見る
• 1998-09-07

著者

• Abe Takao

  Isobe R&d Center Shin-etsu Handotai

• Kobayashi Norihiro

  Isobe R&d Center Shin-etsu Handotai

• AKIYAMA Shoji

  Isobe R&D Center, Shin-Etsu Handotai

• KATO Masahiro

  Isobe R&D Center, Shin-Etsu Handotai

• Akiyama Shoji

  Isobe R&d Center Shin-etsu Handotai

• Kato Masahiro

  Isobe R&d Center Shin-etsu Handotai

関連論文

• Self-Diffusion in Intrinsic and Extrinsic Silicon Using Isotopically Pure ^Silicon/Natural Silicon Heterostructures
• Self-Diffusion in Extrinsic Silicon Using Isotopically Enriched ^Si Layer : Semiconductors
• Epitaxial Growth of Pure ^Si Layers on a Natural Si(100) Substrate Using Enriched ^SiH_4
• Contribution of Polished Surface Waviness to Final SOI Thickness Uniformity of Bonded Wafers through PACE Process (Special Issue on SOI Devices and Their Process Technologies)
• Creation of Bonded SOI Substrates with CZ Silicon Higher than 1000Ωcm in Resistivity
• COP-Free Silicon Surfaces by Rapid Thermal Annealing (RTA) in a H_2/Ar Mixture Ambient Using High Growth Rate Crystals
• Transmission Electron Microscope Observation of "IR Scattering Defects" in As-Grown Czochralski Si Crystals
• Self-Diffusion in Intrinsic and Extrinsic Silicon Using Isotopically Pure 30Silicon/Natural Silicon Heterostructures

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