Creation of Bonded SOI Substrates with CZ Silicon Higher than 1000Ωcm in Resistivity
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概要
- 論文の詳細を見る
- 1999-09-20
著者
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Abe Takao
Isobe R&d Center Shin-etsu Handotai
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Mitani Kiyoshi
Isobe R&d Center Shin-etsu Handotai Co. Ltd.
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Mitani Kiyoshi
Isobe R&d Center Shin-etsu Handotai
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SAITO Shigeru
Isobe R&D Center, Shin-Etsu Handotai Co., Ltd.
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AIHARA Ken
Isobe R&D Center, Shin-Etsu Handotai Co., Ltd.
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QU Weifeng
Isobe R&D Center, Shin-Etsu Handotai Co., Ltd.
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HAYAMIZU Yoshinori
Isobe R&D Center, Shin-Etsu Handotai Co., Ltd.
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KIMURA Masanori
Isobe R&D Center, Shin-Etsu Handotai Co., Ltd.
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Aihara Ken
Isobe R&d Center Shin-etsu Handotai Co. Ltd.
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Qu Weifeng
Isobe R&d Center Shin-etsu Handotai Co. Ltd.
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Kimura Masanori
Isobe R&d Center Shin-etsu Handotai Co. Ltd.
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Hayamizu Yoshinori
Isobe R&d Center Shin-etsu Handotai Co. Ltd.
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Abe Takao
Isobe R&d Center Shin-etsu Handotai Co. Ltd.
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Saito Shigeru
Isobe R&d Center Shin-etsu Handotai Co. Ltd.
関連論文
- Self-Diffusion in Intrinsic and Extrinsic Silicon Using Isotopically Pure ^Silicon/Natural Silicon Heterostructures
- Self-Diffusion in Extrinsic Silicon Using Isotopically Enriched ^Si Layer : Semiconductors
- Epitaxial Growth of Pure ^Si Layers on a Natural Si(100) Substrate Using Enriched ^SiH_4
- Study of HF Defects in Thin, Bonded Silicon-on-Insulator Dependent on Original Wafers
- Effective KOH Etching Prior to Modified Secco Etching for Analyzing Defects in Thin Bonded Silicon on Insulator (SOI) Wafers
- Effective KOH Etching Prior to Modified Secco Etching for Analyzing Defects in Thin Bonded SOI Wafers
- Detection of Particles on Quarter μm Thick or Thinner SOI Wafers
- Detection of Particles on Quarter um Thick or Thinner SOI Wafers
- Contribution of Polished Surface Waviness to Final SOI Thickness Uniformity of Bonded Wafers through PACE Process (Special Issue on SOI Devices and Their Process Technologies)
- Process Technology of Bonded SOI Wafers : Recent Development and Quality
- Creation of Bonded SOI Substrates with CZ Silicon Higher than 1000Ωcm in Resistivity
- COP-Free Silicon Surfaces by Rapid Thermal Annealing (RTA) in a H_2/Ar Mixture Ambient Using High Growth Rate Crystals
- Self-Diffusion in Intrinsic and Extrinsic Silicon Using Isotopically Pure 30Silicon/Natural Silicon Heterostructures