Mitani Kiyoshi | Isobe R&d Center Shin-etsu Handotai

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著作論文

Study of HF Defects in Thin, Bonded Silicon-on-Insulator Dependent on Original Wafers
Effective KOH Etching Prior to Modified Secco Etching for Analyzing Defects in Thin Bonded Silicon on Insulator (SOI) Wafers
Effective KOH Etching Prior to Modified Secco Etching for Analyzing Defects in Thin Bonded SOI Wafers
Detection of Particles on Quarter μm Thick or Thinner SOI Wafers
Detection of Particles on Quarter um Thick or Thinner SOI Wafers
Contribution of Polished Surface Waviness to Final SOI Thickness Uniformity of Bonded Wafers through PACE Process (Special Issue on SOI Devices and Their Process Technologies)
Process Technology of Bonded SOI Wafers : Recent Development and Quality
Creation of Bonded SOI Substrates with CZ Silicon Higher than 1000Ωcm in Resistivity

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