Process Technology of Bonded SOI Wafers : Recent Development and Quality
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概要
- 論文の詳細を見る
- 1995-08-21
著者
関連論文
- Study of HF Defects in Thin, Bonded Silicon-on-Insulator Dependent on Original Wafers
- Effective KOH Etching Prior to Modified Secco Etching for Analyzing Defects in Thin Bonded Silicon on Insulator (SOI) Wafers
- Effective KOH Etching Prior to Modified Secco Etching for Analyzing Defects in Thin Bonded SOI Wafers
- Detection of Particles on Quarter μm Thick or Thinner SOI Wafers
- Detection of Particles on Quarter um Thick or Thinner SOI Wafers
- Contribution of Polished Surface Waviness to Final SOI Thickness Uniformity of Bonded Wafers through PACE Process (Special Issue on SOI Devices and Their Process Technologies)
- Process Technology of Bonded SOI Wafers : Recent Development and Quality
- Creation of Bonded SOI Substrates with CZ Silicon Higher than 1000Ωcm in Resistivity