Contribution of Polished Surface Waviness to Final SOI Thickness Uniformity of Bonded Wafers through PACE Process (Special Issue on SOI Devices and Their Process Technologies)

概要

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For bonded SOI wafers with active silicon layers thinner than 1μm, controlling thickness uniformity of active layers has been developed recently. A Plasma Assisted Chemical Etching (PACE) technology is one of methods to realize 0.1μm bonded SOI. When this technology was proposed for the first time, it was believed that 0.1μm thick bonded SOI wafers were easily produced independent of initial SOI layer thickness prior to the PACE process. It was true to create 0.1μm SOI thickness in average. However, the uniformity appeared to be dependent on initial SOI material as well as the PACE machine capability itself. The SOI thickness uniformity pattern after PACE looked like surface morphology of polished silicon wafers. After the experiment to apply various polishing methods to each polishing process in the bonded SOI process, it was verified that the final SOI thickness uniformity after the PACE process was dependent on the waviness of wafer surfaces created in polishing.
社団法人電子情報通信学会の論文
1997-03-25