Nakano M | Advanced Technology Research Laboratories Sharp Corporation

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著作論文

Power Durability of Al-W Alloy Electrodes Used in RF-Band Surface Acoustic Wave Filters
The Power Durability of 900 MHz Band Double-Mode-Type Surface Acoustic Wave Filters and Improvement in Power Durability of Al-Cu Thin Film Electrodes by Cu Atom Segregation
Epitaxial Silicon Growth by Load-Lock Low Pressure Chemical Vapor Deposition System for Elevated Source/Drain Formation
Study of an Elevated Drain Fabrication Method for Ultra-Shallow Junction
Study of HF Defects in Thin, Bonded Silicon-on-Insulator Dependent on Original Wafers
Epitaxial Growth of (Sr, Ba)Nb_2O_6 Thin Films by Pulsed Laser Deposition
Study of HF Defects in Thin Bonded SOI Dependent on Original Wafers
Novel Ultra-Clean Self Aligned Silicide (Salicide) Technology Using Double Titanium Deposited Silicide (DTD) Process for 0.1μm Gate Electrode
Advanced Trench and Local Oxidation of Silicon (LOCOS) Isolation Technology for Ultra-Low-Power Bulk Dynamic Threshold Metal Oxide Semiconductor Field Effect Transistor (B-DTMOS)
Fabrication and Characterization of (Sr, Ba)Nb_2O_6 Thin Films by Pulsed Laser Deposition
Ba_Sr_TiO_3 Thin Film Production on Atomically Flat SrTiO_3(100)Substrates by a Pulsed Laser Deposition and Dielectric properties
Effective KOH Etching Prior to Modified Secco Etching for Analyzing Defects in Thin Bonded Silicon on Insulator (SOI) Wafers
Effective KOH Etching Prior to Modified Secco Etching for Analyzing Defects in Thin Bonded SOI Wafers
Novel Oxygen Free Titaniurm Silicidation (OFS) Processing for Low Resistance and Thermally Stable SALICIDE (Self-Aligned Silicide) in Deep Submicron Dual Gate CMOS (Complementary Metal-Oxide Semiconductors)
Low-Temperature-Fireable Dielectric Material Pb(Fe_W_)O_3-(Pb,Ca)(Fe_Nb_)O_3 for Microwave Use
A Four-Band Hubbard Model for Doped CuO_5 and Related Clusters. Populations of Holes on Apex Oxygens Determined by the Full VB CI Method
A Two-Band Hubbard Model for Clusters of Doped Copper Oxides and Other Metal Oxides: Populations of Holes and Spin Densities by the Full VB CI Method
Extended Hubbard Models for Transition Metal Oxides and Halides: Importance of Spin and Charge Fluctuations in Charge Transfer Metals : Electrical Properties of Condensed Matter

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