HAYASHIDA Shigeki | Central Research Laboratories, Sharp Corporation

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概要

• 同名の論文著者
• Central Research Laboratories, Sharp Corporationの論文著者

関連著者

• KOTAKI Hiroshi

  Central Research Laboratories, Sharp Corporation

• NAKANO Masayuki

  Central Research Laboratories, Sharp Corporation

• HAYASHIDA Shigeki

  Central Research Laboratories, Sharp Corporation

• KAKIMOTO Seizou

  Central Research Laboratories, Sharp Corporation

• Kakimoto S

  Mitsubishi Electric Corp. Hyogo Jpn

• Kakimoto Seizo

  Advanced Technology Research Laboratories Sharp Corporation

• Sugimoto Kazuo

  Advanced Technology Research Laboratories Sharp Corporation

• Kotaki Hiroshi

  Advanced Technology Research Laboratories Sharp Corporation

• Nakano Masayuki

  Central Research Laboratories Sharp Corporation

• Hayashida S

  Ntt Opto-electronics Laboratories

• Matsuoka Toshimasa

  Central Research Laboratories Sharp Corporation

• Takagi Junkou

  Central Research Laboratories, Sharp Corporation

• NAKANO Akihiko

  Analysis Center, (IC) Group, Sharp Corpotation

• UDA Keichiro

  Central Research Laboratories, Sharp Corporation

• SATO Yuichi

  Central Research Laboratories, Sharp Corporation

• NARA MASATO

  Shizuoka Prefectural Fisheries Experiment Station

• MITSUHASHI Katsunori

  Central Research Laboratories, Sharp Corporation

• Uda Keichiro

  Central Research Laboratories Sharp Corporation

• Takagi J

  Sharp Corp. Nara Jpn

• Takagi Junkou

  Central Research Laboratories Sharp Corporation

• Nakano M

  Advanced Technology Research Laboratories Sharp Corporation

• HAYASHIDA Shoichi

  NTT Opto-electronics Laboratories

• Nakano M

  National Mito Hospital

• Mitsuhashi K

  Central Research Laboratories Sharp Corporation:(present Address)functional Devices Laboratories Sha

• Mitsuhashi Katsunori

  Central Research Laboratories Sharp Corporation

• Nakano Akihiko

  Analysis Center (ic) Group Sharp Corpotation

• Sato Y

  Kanagawa Univ. Yokohama

• Sato Yuichi

  Central Research Laboratories Sharp Corporation

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著作論文

• Novel Low Leakage and Low Resistance Titanium Salicide Technology with Recoil Nitrogen Achieved by Silicidation after Ion Implantation through Contamination-Restrained Oxygen Free LPCVD-Nitride Layer (SICRON)
• Novel Oxygen Free Titaniurm Silicidation (OFS) Processing for Low Resistance and Thermally Stable SALICIDE (Self-Aligned Silicide) in Deep Submicron Dual Gate CMOS (Complementary Metal-Oxide Semiconductors)

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