Novel Low Leakage and Low Resistance Titanium Salicide Technology with Recoil Nitrogen Achieved by Silicidation after Ion Implantation through Contamination-Restrained Oxygen Free LPCVD-Nitride Layer (SICRON)
スポンサーリンク
概要
- 論文の詳細を見る
- 1996-02-01
著者
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Matsuoka Toshimasa
Central Research Laboratories Sharp Corporation
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KOTAKI Hiroshi
Central Research Laboratories, Sharp Corporation
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NAKANO Masayuki
Central Research Laboratories, Sharp Corporation
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HAYASHIDA Shigeki
Central Research Laboratories, Sharp Corporation
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KAKIMOTO Seizou
Central Research Laboratories, Sharp Corporation
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NAKANO Akihiko
Analysis Center, (IC) Group, Sharp Corpotation
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UDA Keichiro
Central Research Laboratories, Sharp Corporation
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SATO Yuichi
Central Research Laboratories, Sharp Corporation
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Kakimoto S
Mitsubishi Electric Corp. Hyogo Jpn
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Kakimoto Seizo
Advanced Technology Research Laboratories Sharp Corporation
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Uda Keichiro
Central Research Laboratories Sharp Corporation
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Sugimoto Kazuo
Advanced Technology Research Laboratories Sharp Corporation
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Kotaki Hiroshi
Advanced Technology Research Laboratories Sharp Corporation
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Nakano Akihiko
Analysis Center (ic) Group Sharp Corpotation
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Nakano Masayuki
Central Research Laboratories Sharp Corporation
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Hayashida S
Ntt Opto-electronics Laboratories
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Sato Y
Kanagawa Univ. Yokohama
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Sato Yuichi
Central Research Laboratories Sharp Corporation
関連論文
- Influence of N_2O Oxynitridation on Interface Trap Generation in Surface-Channel p-Channel Metal Oxide Semiconductor Field Effect Transistors
- Influence of N_2O-Oxynitridation on Interface Trap Generation in Surface-Channel PMOSFETs
- Thickness Dependence of Furnace N_2O-Oxynitridation Effects on Breakdown of Thermal Oxides
- Novel Low Leakage and Low Resistance Titanium Salicide Technology with Recoil Nitrogen Achieved by Silicidation after Ion Implantation through Contamination-Restrained Oxygen Free LPCVD-Nitride Layer (SICRON)
- Low Resistance and Thermally Stable Ti-Silicided Shallow Junction Formed by Advanced 2-Step Rapid Thermal Processing and Its Application to Deep Submicron Contact
- Elevated Polycide Source/Drain Shallow Junctions with Advanced Silicidation Processing and Al Plug/Collimated PVD (Physical Vapor Deposition)- Ti/TiN/Ti/Polycide Contact for Deep-Submicron Complementary Metal-Oxide Semiconductors
- Study of an Elevated Drain Fabrication Method for Ultra-Shallow Junction
- Novel Ultra-Clean Self Aligned Silicide (Salicide) Technology Using Double Titanium Deposited Silicide (DTD) Process for 0.1μm Gate Electrode
- Advanced Trench and Local Oxidation of Silicon (LOCOS) Isolation Technology for Ultra-Low-Power Bulk Dynamic Threshold Metal Oxide Semiconductor Field Effect Transistor (B-DTMOS)
- Novel Oxygen Free Titaniurm Silicidation (OFS) Processing for Low Resistance and Thermally Stable SALICIDE (Self-Aligned Silicide) in Deep Submicron Dual Gate CMOS (Complementary Metal-Oxide Semiconductors)
- Vibrational Overtone Absorption of Side Chain in Silicone at 1.55 μm Wavelength Band
- Digital Thermooptic Switch Formed Using Silicone Resin Waveguides
- Analysis of Substrate Effect in Chemically Amplified Resist on Silicate-Glass
- Oxidation Site of Polycrystalline Silicon Surface Studied Using Scanning Force / Tunneling Microscope (AFM/STM) in Air
- Photochromic Evaporated Films of Spiropyrans with Long Alkyl Chains
- Silver Negative-Ion Implantation into Thermally Grown Thin SiO2 Film on Si Substrate and Heat Treatment for Formation of Silver Nanoparticles
- Investigation of Energy-Dispersive X-ray Computed Tomography System with CdTe Scan Detector and Comparing-Differentiator and Its Application to Gadolinium K-Edge Imaging
- Novel Nonvolatile Random-Access Memory with Si Nanocrystals for Ultralow-Power Scheme