Elevated Polycide Source/Drain Shallow Junctions with Advanced Silicidation Processing and Al Plug/Collimated PVD (Physical Vapor Deposition)- Ti/TiN/Ti/Polycide Contact for Deep-Submicron Complementary Metal-Oxide Semiconductors

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1994-01-30

著者

• Mori Y

  Matsushita Electronics Corp. Kyoto Jpn

• Takagi Junkou

  Central Research Laboratories, Sharp Corporation

• KOTAKI Hiroshi

  Central Research Laboratories, Sharp Corporation

• TAKEGAWA Yoshiyuki

  Central Research Laboratories, Sharp Corporation

• MORI Yukiko

  Central Research Laboratories, Sharp Corporation

• MITSUHASHI Katsunori

  Central Research Laboratories, Sharp Corporation

• Takegawa Youichi

  Research Institute Of Electrical Communication Tohoku University:(present Address) Research & De

• Takegawa Y

  Tohoku Univ. Sendai Jpn

• Mori Yukiko

  Central Research Laboratories Sharp Corporation

• Takagi J

  Sharp Corp. Nara Jpn

• Takagi Junkou

  Central Research Laboratories Sharp Corporation

• Kotaki Hiroshi

  Advanced Technology Research Laboratories Sharp Corporation

• Mitsuhashi K

  Central Research Laboratories Sharp Corporation:(present Address)functional Devices Laboratories Sha

• Mitsuhashi Katsunori

  Central Research Laboratories Sharp Corporation

関連論文

• Thickness Dependence of Furnace N_2O-Oxynitridation Effects on Breakdown of Thermal Oxides
• Novel Low Leakage and Low Resistance Titanium Salicide Technology with Recoil Nitrogen Achieved by Silicidation after Ion Implantation through Contamination-Restrained Oxygen Free LPCVD-Nitride Layer (SICRON)
• Growth Mode and Characteristics of the O_2-Oxidized Si(100) Surface Oxide Layer Observed by Real Time Photoemission Measurement
• Low Resistance and Thermally Stable Ti-Silicided Shallow Junction Formed by Advanced 2-Step Rapid Thermal Processing and Its Application to Deep Submicron Contact
• MOCVD Growth of InP on 4-inch Si Substrate with GaAs Intermediate Layer
• Seeded Electron Beam Recrystallization of Large Area SOI Using Striped Tungsten Encapsulation Technique
• Elevated Polycide Source/Drain Shallow Junctions with Advanced Silicidation Processing and Al Plug/Collimated PVD (Physical Vapor Deposition)- Ti/TiN/Ti/Polycide Contact for Deep-Submicron Complementary Metal-Oxide Semiconductors
• Study of an Elevated Drain Fabrication Method for Ultra-Shallow Junction
• Novel Ultra-Clean Self Aligned Silicide (Salicide) Technology Using Double Titanium Deposited Silicide (DTD) Process for 0.1μm Gate Electrode
• Advanced Trench and Local Oxidation of Silicon (LOCOS) Isolation Technology for Ultra-Low-Power Bulk Dynamic Threshold Metal Oxide Semiconductor Field Effect Transistor (B-DTMOS)
• Novel Oxygen Free Titaniurm Silicidation (OFS) Processing for Low Resistance and Thermally Stable SALICIDE (Self-Aligned Silicide) in Deep Submicron Dual Gate CMOS (Complementary Metal-Oxide Semiconductors)
• Study of Ag Addition to YBa_2Cu_3O_ Films Prepared using Electrophoretic Deposition
• Fabrication of Ag-Doped Y_1Ba_2Cu_3O_ Superconducting Films on Cu Substrates by Electrophoretic Deposition
• Fabrication of Y-Ba-Cu-O Superconducting Films on Cu Substrates by an Electrophoretic Deposition Technique
• Magnetic Field Dependence of Voltage Noise in Y_1Ba_2Cu_3O_ Ceramic Superconductor Film
• Diffusion Barrier with Reactively Sputtered TiN for Thermally Stable Contact : Special Section : Solid State Devices and Materials 2 : Silicon Devices and Process Technologies
• Silver Negative-Ion Implantation into Thermally Grown Thin SiO2 Film on Si Substrate and Heat Treatment for Formation of Silver Nanoparticles
• Novel Nonvolatile Random-Access Memory with Si Nanocrystals for Ultralow-Power Scheme
• Interconnection Technology for Three-Dimensional Integration
• Interconnection Technology for Three-Dimensional Integration

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