Interconnection Technology for Three-Dimensional Integration
スポンサーリンク
概要
- 論文の詳細を見る
The technology of thermally stable and fully planarized multilevel interconnections with selective CVD-W vias and <SUP>31</SUP>P<SUP>+</SUP>/<SUP>11</SUP>B<SUP>+</SUP> implanted WSi<I><SUB>x</SUB></I>/TiN/Si contacts has been developed for three-dimensional VLSIs. Via holes with high aspect ratios (about 3) and different depths (0.8–3.0 μm) were completely filled by selective W-CVD and subsequent etch-back, and the surface was planarized to below 0.2 μm using a previously reported interlevel insulation planarization technology. Metal-silicon reactions during high-temperature annealing were eliminated by the use of a TiN thin film (0.08 μm) containing oxygen as a diffusion barrier. By performing an additional <SUP>31</SUP>P<SUP>+</SUP> and <SUP>11</SUP>B<SUP>+</SUP> implantation into the interconnection, the ohmic contacts to <I>n</I><SUP>+</SUP> and <I>p</I><SUP>+</SUP> Si in this structure were also maintained even after annealing at 900°C for 6 hours.
- 公益社団法人 応用物理学会の論文
著者
-
Yamazaki Osamu
Central Research Laboratories Matsushita Electric Industrial Co. Ltd.
-
Koba Masayoshi
Central Research Laboratories Sharp Corporation
-
Ohtake Koui
Central Research Laboratories Sharp Corporation
-
Mitsuhashi Katsunori
Central Research Laboratories Sharp Corporation
-
Yamazaki Osamu
Central Research Laboratories, Sharp Corporation, 2613-1, Ichinomoto, Tenri, Nara 632
-
Koba Masayoshi
Central Research Laboratories, Sharp Corporation, 2613-1, Ichinomoto, Tenri, Nara 632
関連論文
- Spontaneous Regression of Hepatocellular Carcinoma : Report of a Case
- In Situ Rapid Thermal Nitridation of Collimated Titanium by Physical Vapor Deposition as a Blanket Tungsten Barrier
- Properties of High T_c Superconducting Quantum Interference Device Microscope With High μ-Metal Needle : Superconductors
- Properties of High T_c Superconducting Quantum Interference Device Microscope with High μ-Metal Needle
- Mirizzi Syndrome Caused by Xanthogranulomatous Cholecystitis: Report of a case
- Analysis of 69 patients with amebic liver abscess
- Low Resistance and Thermally Stable Ti-Silicided Shallow Junction Formed by Advanced 2-Step Rapid Thermal Processing and Its Application to Deep Submicron Contact
- MOCVD Growth of InP on 4-inch Si Substrate with GaAs Intermediate Layer
- Seeded Electron Beam Recrystallization of Large Area SOI Using Striped Tungsten Encapsulation Technique
- Elevated Polycide Source/Drain Shallow Junctions with Advanced Silicidation Processing and Al Plug/Collimated PVD (Physical Vapor Deposition)- Ti/TiN/Ti/Polycide Contact for Deep-Submicron Complementary Metal-Oxide Semiconductors
- Clinical significance of serum cytokeratin-19 fragment (CYFRA 21-1) in hepatocellular carcinoma
- A long-term survivor of intrahepatic cholangiocarcinoma with paraaortic lymph node metastasis
- Serosal invasion in TNM staging of mass-forming intrahepatic cholangiocarcinoma
- Indications for surgical treatment of intrahepatic cholangiocarcinoma with lymph node metastases
- Hepatitis C virus infection as a likely etiology of intrahepatic cholangiocarcinoma
- Clinicopathologic characteristics of small intrahepatic cholangiocarcinomas of mass-forming type
- Histologic bile duct invasion by a mass-forming intrahepatic cholangiocarcinoma
- Preparation of (Pb, La)TiO_3-PbTiO_3 Thin Films with Superlattice Structure : T: Thin Film
- Thickness Dependence of Superconductivity in As-Sputtered Er-Ba-Cu-O Thin Films
- Preparation and Properties of (Pb,La)TiO_3 Epitaxial Thin Films by Multi-Target Sputtering : T: Thin Film
- Preparation and Application of ZnO Thin Film by Cylindrical Magnetron Sputter : ZnO Thin Film SAW Long Delay Line : Communication Devices and Materials
- Novel Oxygen Free Titaniurm Silicidation (OFS) Processing for Low Resistance and Thermally Stable SALICIDE (Self-Aligned Silicide) in Deep Submicron Dual Gate CMOS (Complementary Metal-Oxide Semiconductors)
- Some Optical Properties of CuCl Single Crystals
- Successful Treatment of a Hepatic Abscess that Formed Secondary to Fish Bone Penetration by Percutaneous Transhepatic Removal of the Foreign Body: Report of a Case
- Magnetic Field Dependence of Voltage Noise in Y_1Ba_2Cu_3O_ Ceramic Superconductor Film
- Diffusion Barrier with Reactively Sputtered TiN for Thermally Stable Contact : Special Section : Solid State Devices and Materials 2 : Silicon Devices and Process Technologies
- Comparison of the outcomes between anatomical resection and limited resection for single hepatocellular carcinomas no larger than 5cm in diameter : a single-center study
- Interconnection Technology for Three-Dimensional Integration
- Interconnection Technology for Three-Dimensional Integration