MOCVD Growth of InP on 4-inch Si Substrate with GaAs Intermediate Layer
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1987-10-20
著者
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Kudo Jun
Central Research Laboratories Sharp Corporation
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Kudo J
Semiconductor Technol. Academic Res. Center Yokohama Jpn
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Kudo Jun
Department Of Biotechnology Tottori University
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KAKIMOTO Seizo
Central Research Laboratories, Sharp Corporation
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Kakimoto Seizo
Central Research Laboratories Sharp Corporation
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SEKI Akinori
Central Research Laboratories, SHARP Corporation
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KONUSHI Fumihiro
Central Research Laboratories, SHARP Corporation
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FUKUSHIMA Takashi
Central Research Laboratories, SHARP Corporation
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KOBA Masayoshi
Central Research Laboratories, SHARP Corporation
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Fukushima Takashi
Central Research Laboratories Sharp Corporation
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Seki Akinori
Central Research Laboratories Sharp Corporation
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Seki Akinori
Central Research Laboratories Engineering Center Sharp Co. Ltd.
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Koba M
Sharp Corp. Chiba Jpn
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Koba Masayoshi
Central Research Laboratories Sharp Corporation
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Mitsuhashi K
Central Research Laboratories Sharp Corporation:(present Address)functional Devices Laboratories Sha
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Konushi Fumihiro
Central Research Laboratories Sharp Corporation
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