Low-Temperature-Fireable Dielectric Material Pb(Fe_<2/3>W_<1/3>)O_3-(Pb,Ca)(Fe_<1/2>Nb_<1/2>)O_3 for Microwave Use
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-09-30
著者
-
Nakano M
Advanced Technology Research Laboratories Sharp Corporation
-
NAKANO Mutsuko
Materials Research Center, TDK Corporation
-
SUZUKI Kazuaki
Materials Research Center, TDK Corporation
-
MIURA Taro
Materials Research Center, TDK Corporation
-
KOBAYASHI Makoto
Materials Research Center, TDK Corporation
-
Miura Taro
Materials Research Center Tdk Corporation
-
Suzuki Kazuaki
Materials Research Center Tdk Corporation
関連論文
- Power Durability of Al-W Alloy Electrodes Used in RF-Band Surface Acoustic Wave Filters
- The Power Durability of 900 MHz Band Double-Mode-Type Surface Acoustic Wave Filters and Improvement in Power Durability of Al-Cu Thin Film Electrodes by Cu Atom Segregation
- Epitaxial Silicon Growth by Load-Lock Low Pressure Chemical Vapor Deposition System for Elevated Source/Drain Formation
- Study of an Elevated Drain Fabrication Method for Ultra-Shallow Junction
- Study of HF Defects in Thin, Bonded Silicon-on-Insulator Dependent on Original Wafers
- Epitaxial Growth of (Sr, Ba)Nb_2O_6 Thin Films by Pulsed Laser Deposition
- Study of HF Defects in Thin Bonded SOI Dependent on Original Wafers
- Novel Ultra-Clean Self Aligned Silicide (Salicide) Technology Using Double Titanium Deposited Silicide (DTD) Process for 0.1μm Gate Electrode
- Advanced Trench and Local Oxidation of Silicon (LOCOS) Isolation Technology for Ultra-Low-Power Bulk Dynamic Threshold Metal Oxide Semiconductor Field Effect Transistor (B-DTMOS)
- Fabrication and Characterization of (Sr, Ba)Nb_2O_6 Thin Films by Pulsed Laser Deposition
- Ba_Sr_TiO_3 Thin Film Production on Atomically Flat SrTiO_3(100)Substrates by a Pulsed Laser Deposition and Dielectric properties
- Effective KOH Etching Prior to Modified Secco Etching for Analyzing Defects in Thin Bonded Silicon on Insulator (SOI) Wafers
- Effective KOH Etching Prior to Modified Secco Etching for Analyzing Defects in Thin Bonded SOI Wafers
- Novel Oxygen Free Titaniurm Silicidation (OFS) Processing for Low Resistance and Thermally Stable SALICIDE (Self-Aligned Silicide) in Deep Submicron Dual Gate CMOS (Complementary Metal-Oxide Semiconductors)
- Low-Temperature-Fireable Dielectric Material Pb(Fe_W_)O_3-(Pb,Ca)(Fe_Nb_)O_3 for Microwave Use
- A Four-Band Hubbard Model for Doped CuO_5 and Related Clusters. Populations of Holes on Apex Oxygens Determined by the Full VB CI Method
- A Two-Band Hubbard Model for Clusters of Doped Copper Oxides and Other Metal Oxides: Populations of Holes and Spin Densities by the Full VB CI Method
- Extended Hubbard Models for Transition Metal Oxides and Halides: Importance of Spin and Charge Fluctuations in Charge Transfer Metals : Electrical Properties of Condensed Matter
- Determination of the Frequency Dependence of Complex Permittivity in the Pseudo-Microwave Range by an Advanced Perturbation Method ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Excess-Magnesia Effect on Pb(MgW)0_3-PbTi0_3 Dielectrics and the Aging Phenomenon
- Development of a High-Q Multilayer Ceramic Resonator