Separation by Bonding Si Islands (SBSI) for Advanced CMOS LSI Applications(Si Devices and Processes, <Special Section>Fundamental and Application of Advanced Semiconductor Devices)

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概要

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• We have developed separation by bonding Si islands (SBSI) process for advanced CMOS LSI applications. In this process, the Si islands that become the SOI regions are formed by selective etching of the SiGe layer in the Si/SiGe stacked layers, and those are bonded to the Si substrate with the thermal oxide layers by furnace annealing. The etching selectivity for SiGe/Si and surface roughness after the SiGe etching were found to be improved by decreasing the HNO_3 concentration in the etching solution. The thicknesses of the fabricated Si island and the buried oxide layer also became uniform by decreasing the HNO_3 concentration. In addition, it was found that the space formed by SiGe etching in the Si/SiGe stacked layers was able to be filled with the thermal oxide layer without furnace annealing.

• 社団法人電子情報通信学会の論文
• 2005-04-01

著者

• OHMI Shun-ichiro

  Tokyo Institute of Technology

• MUROTA Junichi

  Research Institute of Electrical Communication, Tohoku University

• Morita Shinya

  Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology

• YAMAZAKI Takashi

  Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology

• OHMI Shunichiro

  Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology

• OHRI Hiroyuki

  Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology

• SAKURABA Masao

  Research Institute for Electrical Communications, Tohoku University

• OMI Hiroo

  NTT Basic Research Laboratories, NTT Corporation

• SAKAI Tetsushi

  Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology

• Omi Hiroo

  Ntt Basic Research Laboratories

• Ohri Hiroyuki

  Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology

• Sakai Tetsushi

  Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology

• Ohmi Shun‐ichiro

  Tokyo Inst. Technol. Yokohama Jpn

• Ohmi Shunichiro

  Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology

• Sakuraba Masao

  Research Institute For Electrical Communications Tohoku University

• Murota Junichi

  Research Institute For Electrical Communications Tohoku University

• Omi Hiroo

  Ntt Basic Research Laboratories Ntt Corporation

• Sakai Tetsushi

  Tokyo Inst. Of Technol. Yokohama‐shi Jpn

• Yamazaki Takashi

  Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology

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